IC MOSFET SMD Type MOS Field Effect Transistor 2SK2415 Features TO-252 Low On-Resistance MAX. (@ VGS = 10 V, ID = 4.0A) RDS(on)2 = 0.15 MAX. (@ VGS = 4 V, ID = 4.0 A) +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50-0.15 RDS(on)1 = 0.10 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15 0.50-0.15 +0.2 9.70-0.2 Low Ciss Ciss = 570 pF TYP. 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V ID 8.0 A Drain current Idp * 32 Power dissipation PD 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW A W 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Input capacitance Ciss Output capacitance Coss VDS=10V,ID=4A Min Typ Max 10 10 1.0 5.0 1.6 2.0 8.4 A A V S VGS=10V,ID=4A 0.07 0.10 VGS=4V,ID=4A 0.10 0.15 VDS=10V,VGS=0,f=1MHZ Unit 570 pF 290 pF Reverse transfer capacitance Crss 75 pF Turn-on delay time ton 5 ns Rise time tr 60 ns Turn-off delay time toff Fall time tf ID=4A,VGS(on)=10V,RG=10 ,VDD=30V 75 ns 40 ns www.kexin.com.cn 1