Diodes SMD Type Silicon Switching Diode Array BAS28W SOT-343 Unit: mm Features For high-speed switching applications Electrical insulated diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym b o l V a lu e U n it D io d e re ve rs e vo lta g e P a ra m e te r VR 75 V P e a k re ve rs e vo lta g e V RM 85 V IF 200 mA IF S 4 .5 A P to t 250 mW Tj 150 T s tg -5 5 to + 1 5 0 F o rw a rd c u rre n t S u rg e fo rw a rd c u rre n t, t = 1 s T o ta l p o w e r d is s ip a tio n , T S = 1 0 3 J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re ra n g e J u n c tio n - a m b ie n t 1) J u n c tio n - s o ld e rin g p o in t R th JA 460 K /W R th JS 190 K /W N o te 1 .P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m 40m m 1 .5 m m / 0 .5 c m 2 C u www.kexin.com.cn 1 Diodes SMD Type BAS28W Electrical Characteristics Ta = 25 Parameter Breakdown voltage Forward voltage Symbol Test Condition Min I(BR) V R = 40 V 85 IF Reverse current IR Diode capacitance CD Reverse recovery time trr Marking 2 JTs www.kexin.com.cn Max Unit V IF = 1 mA 715 IF = 10 mA 855 IF = 50 mA 1000 IF = 150 mA 1250 V R = 75 V 1 mV A V R = 25 V, T A = 150 30 V R = 75 V, T A = 150 50 f = 1 MHz; V R = 0 2 pF 6 ns IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1mA Marking Typ