KEXIN BSR15

Transistors
IC
SMD Type
PNP Switching Transistors
BSR15
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Low voltage (max. 60 V).
1
0.55
High current (max. 600 mA).
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-600
mA
Peak collector current
ICM
-800
mA
Peak base current
IBM
-200
mA
Total power dissipation
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
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Transistors
IC
SMD Type
BSR15
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Testconditons
Max
Unit
IE = 0; VCB = -50 V
-20
nA
IE = 0; VCB = -50 V; Tj = 150
-20
ìA
IC = 0; VEB = -5 V
-50
nA
IC = -0.1 mA; VCE = -10 V
hFE
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
VBEsat
Typ
35
IC = -1 mA; VCE = -10 V
50
IC = -10 mA; VCE = -10 V
75
IC = -150 mA; VCE = -10 V*
100
IC = -500 mA; VCE = -10 V; *
30
300
IC = -150 mA; IB = -15 mA
-400
mV
IC = -500 mA; IB = -50 mA
-1.6
V
IC = -150 mA; IB = -15 mA
-1.3
V
IC = -500 mA; IB = -50 mA
-2.6
V
8
pF
Collector capacitance
Cc
IE = ie = 0; VCB = -10 V; f = 1 MHz
Emitter capacitance
Ce
IC = ic = 0; VEB = -2 V; f = 1 MHz
Transition frequency
fT
IC = -50 mA; VCE = -20 V; f = 100 MHz
Turn-on time
ton
ICon = -150 mA; IBon = -15 mA;
IBoff = 15 mA ( see Fig )
Delay time
30
200
MHz
40
ns
td
12
ns
Rise time
tr
30
ns
Turn-off time
toff
365
ns
Storage time
ts
300
ns
Fall time
tf
65
ns
* Pulse test: tp
300 ìs; d
Marking
Marking
2
VCEsat
Min
T7
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0.02.