Transistors SMD Type NPN Transistors KMBT3904(MMBT3904) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Epitaxial planar die construction 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.2 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collecto- base breakdown voltage VCBO Ic= 100 ìA Collector- emitter breakdown voltage VCEO Ic= 1 mA Emitter - base breakdown voltage VEBO IE= 10 A Collector cut-off current IcBO VCB= 60 V , IE=0 Collector cut-off current IcEO Emitter cut-off current IEBO DC current gain hFE IE=0 IB=0 IC=0 Min Typ Max 60 Unit V 40 V 6 V 0.1 A VCE= 30 V , VBE(off)=3V 50 nA VEB= 5V , IC=0 0.1 A VCE= 1V, IC= 10mA 100 VCE= 1V, IC= 50mA 60 400 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V Base - emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 0.95 V Delay time td VCC=3.0V,VBE=-0.5V 35 Rise time tr IC=10mA,IB1=-IB2=1.0mA 35 Storage time ts VCC=3.0V,IC=10mA 200 Fall time tf IB1=-IB2=1.0mA 50 Transition frequency fT VCE= 20V, IC= 10mA,f=100MHz 250 ns ns MHz Marking Marking 1AM www.kexin.com.cn 1 Transistors SMD Type KMBT3904(MMBT3904) Typical Characteristics Fig.1 Max Power Dissipation vs Ambient Temperature Fig.3 Typical DC Current Gain vs Collector Current Fig.5 Typical Base-Emitter Saturation Voltage vs. Collector Current 2 www.kexin.com.cn Fig.2 Input and Output Capacitance vs. Collector-Base Voltage Fig.4 Typical Collector-Emitter Saturation Voltage vs. Collector Current