IC
IC
SMD Type
HEXFET Power MOSFET
KRF7604
Features
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (
1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
-3.6
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
-2.9
Pulsed Drain Current *1
IDM
-19
PD
1.8
W
14
mW/
@Ta= 25
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *2
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *3
12
dv/dt
-5.0
TJ, TSTG
-55 to + 150
R
JA
70
A
V
V/ns
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
-2.4A, di/dt
-96A/
s, VDD
*3 Surface mounted on FR-4 board, t
V(BR)DSS,TJ
150
10sec.
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1
IC
IC
SMD Type
KRF7604
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Max
TJ ID = -1mA,Reference to 25
V/
VGS = -4.5V, ID = -2.4A*1
0.09
VGS = -2.7V, ID = -1.2A*1
0.13
m
gfs
VDS = -10V, ID = -1.2A*1
2.6
V
S
VDS = -16V, VGS = 0V
-1.0
VDS = -16V, VGS = 0V, TJ = 125
-25
VGS = -12V
-100
VGS = 12V
100
Qg
ID = -2.4A
Gate-to-Source Charge
Qgs
VDS = -16V
2.6
3.9
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -4.5V
5.6
9.0
Turn-On Delay Time
td(on)
VDD = -10V
17
Rise Time
Fall Time
13
ID = -2.4A
53
td(off)
RG = 6
31
tf
RD=4.0
38
tr
Turn-Off Delay Time
Input Capacitance
Ciss
VGS = 0V
590
Output Capacitance
Coss
VDS = -15V
330
Reverse Transfer Capacitance
Crss
f = 1.0MHz
170
Continuous Source Current
Body Diode)
Unit
V
-0.022
-0.70
IGSS
Typ
-20
VDS = VGS, ID = -250 A
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 0V, ID = -250 A
Min
VGS(th)
IDSS
Drain-to-Source Leakage Current
Testconditons
A
nA
20
nC
ns
pF
IS
-1.8
ISM
-19
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
*1 Pulse width
300 s; duty cycle
-1.2
V
TJ = 25 , IF =-2.4A
41
62
ns
di/dt = 100A/
38
57
TJ = 25 , IS = -2.4A, VGS = 0V*1
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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s*1
C