Transistors SMD Type Surface Mount PNP Silicon Transistor KXT5401 (CXT5401) SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 High current (max. 500mA). Low voltage (max. 150 V). +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 +0.1 2.50-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1 1. Base 0.40 +0.1 -0.1 +0.1 3.00-0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V IC -500 mA 1.2 W Collector current (DC) power dissipation PD thermal resistance Junction- to-ambient R 104 JA Junction temperature Tj 150 Storage temperature Tstg -65 to +150 /W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage VCBO IC=-100 -160 V Collector to emitter breakdown voltage VCEO IC=-1.0mA -150 V Emitter to base breakdown voltage VEBO IE=-10 -5.0 V Collector cutoff current ICBO DC current gain Collector to emitter saturation voltage Base to emitter saturation voltage hFE VCE(sat) VBE(sat) Output capacitance Cob Transition frequency fT A A VCB =- 120 V, IE = 0 -50 nA VCB =- 120 V, TA=100 -50 A IC = -1.0 mA; VCE = -5.0 V 50 IC = -10mA; VCE =- 5.0V 60 IC = -50 mA; VCE = -5.0V 50 240 IC =- 10 mA; IB = -1.0mA -0.2 V IC = -50 mA; IB = -5.0mA -0.5 V IC = -10 mA; IB = -1.0mA -1.0 V IC = -50 mA; IB =- 5.0mA -1.0 V VCB =-10 V, IE = 0,f=1.0MHz 6.0 pF 300 MHz IC = -10 mA; VCE =-10V; f = 100 MHz 100 www.kexin.com.cn 1