Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo [Unit : mm] Dimensions transistor mounted in Φ3mm(T-1) all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor Visable ray cut off mold type Applications VCR, Camcoders Floppy disk drivers Optical detectors/switch [TA = 25 Absolute Maximum Ratings Symbol Rating Unit Collector-Emitter Voltage Parameter VCEO 35 V Emitter-Collector Voltage VECO 6 V Collector Current IC 20 mA Collector Power Dissipation PC 75 mW Operating Temperature Topr. -20~+85 Storage Temperature Tstg. -30~+85 Soldering Temperature*1 Tsol 240 ] Notes : 1. For MAX. 5 seconds at the position of 3 mm from the package. ELECTRO- OPTICAL CHARACTERISTICS Description Symbol Dark Current ICEO Light Current ICEL Condition VCE=10V, EE=0 VCE=10V, EV=500lx ※1 Viewing Angle Unit - - 200 nA 2.5 5.0 - mA nm 700~1050 VR=0V - 880 - nm - - ±30 - deg. VCC=10V, Ic=1㎃ RL=100Ω - 2.5 4.7 - ㎲ p ∆θ tr tf ※1 Color temp. =2856K Standard Tungsten lamp Response Time(Rise Time) Response Time(Fall Time) Max. - Spectral Sensitivity Peek wavelength Typ. Min. -1- ㎲ Silicon photo transistor KDT3002A DYNAMIC CHARACTERISTICS Power dissipation Vs. Ambient temperature Collector current Vs. Irradiance Dark current Vs. Ambient temperature 125 75 50 25 VCE=5V Ta=25℃ 101 100 10-1 -2 0 10 0 20 40 60 80 100 10-1 100 20 40 60 80 100 120 Ambient temperature Ta (℃) Radiant pattern 0.2 Ee=0.5mW/cm 2 2 4 6 8 Collector-Emitter voltage VCE (V) 10 +6 0 2 60 40 +80 Ee=1.0mW/cm 20 0 400 500 600 700 800 900 1000 Wavelength λ (nm) VCC IF VOU T IC 2 10 tf RL INPUT tr 90% OUTPUT 10% tr tf 0 103 104 50 105 Load resistance RL (Ω) -2- 50 50 100 100 1100 Relative intensity (%) ※ Swi tchi ng ti me me asuremen t circuit 101 Ta=25℃ -4 0 0 Response time Vs. Load resistance VCE=2V IC=2mA Ta=25℃ -20 0 +4 80 +100 Relative sensitivity S (%) 2 0 -100 Ee=1.5mW/cm 0.4 +2 0 -80 2 100 -60 Ee=2.0mW/cm Angle (deg.) Ta=25℃ 0.6 102 0 Relative sensitivity Vs. Wavelength Ee=2.5mW/cm 2 103 10 101 Irradiance Ee (mW/cm ) 0.8 0 100 Ee=3.0mW/cm 2 Ta=25℃ 0 1 10 2 Collector current Vs. Collector-Emitter voltage 1.0 102 -1 10-2 Ambient temperature Ta (℃) 10 Dark current ICEO (nA) Collector current IC (mA) VCE=10V 100