Light Emitting Diode(InGaAlP) KLB-16AR KLB-16AR has a high bright InGaAlP Red LED and has the optimized optical characteristics. DIMENSIONS Features • Ultra Wide Viewing Angle • Very Thin Small SMD Package Applications • Display • Indicator • Key Pad Back Light [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage Symbol VR Ratings 5 Unit V IF 25 mA IFP 60 mA PD 70 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +105 °C Tsol. 260 °C Forward current Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Symbol VF Conditions IF = 10 mA Min - Typ 2.0 Max 2.2 Unit V Luminous Intensity Iv IF = 10 mA 15 25 - mcd Doninant Wave Length λd IF = 10 mA 620 - 630 nm Spectral half bandwidth ∆λ IF = 10 mA - 20 - nm Half angle ∆Θ IF = 10 mA - 160 - deg. 1/2 Light Emitting Diode(InGaAlP) KLB-16AR Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 (IF) 30 Relative intensity Forward current IF(mA) 25 20 15 10 5 0 0 20 40 60 80 1 0.5 (℃) 100 0 5 0 10 Ambient temperature Ta 15 20 25 (IF) 35 30 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1 10 Intensity [arb.] Relative radiant intensity PO 1.2 1 0.1 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 0 500 100 (℃) 550 600 650 700 750 800 Wave Length[nm] Ambient temperature Ta Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) +6 0 + 0 -20 -4 0 50 0 25 20 15 40 + 20 -6 10 +80 -80 -100 5 0 0 +100 Forward current IF 30 0 100 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 50 50 Relative intensity(%) 2/2 100