KODENSHI SMK0170I-1

SMK0170I
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features




PIN Connection
High Voltage : BVDSS=700V(Min.)
Low Crss : Crss=2.6pF(Typ.)
Low gate charge : Qg=4.1nC(Typ.)
Low RDS(ON) : RDS(ON)=15Ω(Max.)
D
G
Ordering Information
Type No.
Marking
Package Code
SMK0170I
SMK0170
I-PAK
GD
S
S
I-PAK
Marking Diagram
Column 1 : Device Code
SMK0170
YWW
Column 2 : Production Information
e.g.) YWW
-. Y : Year Code
-. WW : Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
700
V
Gate-source voltage
VGSS
30
V
Drain current (DC) *
ID
(TC=25℃)
1.0
(TC=100℃)
0.63
A
Drain current (Pulsed) *
IDP
4.0
A
Total Power dissipation
PD
28
W
Avalanche current (Single)
②
IAS
1.0
A
Single pulsed avalanche energy
②
EAS
17
mJ
Avalanche current (Repetitive)
①
IAR
1.0
A
Repetitive avalanche energy
①
EAR
0.5
mJ
TJ
150
Tstg
-55~150
Junction temperature
Storage temperature range
C
* Limited by maximum junction temperature
Characteristic
Thermal
resistance*
Symbol
Typ.
Max.
Junction-case
Rth(J-C)
-
4.46
Junction-ambient
Rth(J-A)
-
62.5
KSD-T6Q007-000
Unit
℃/W
1
SMK0170I
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BVDSS
ID=250A, VGS=0
700
-
-
V
Gate threshold voltage
VGS(th)
ID=250A, VDS=VGS
2.0
-
4.0
V
Drain-source cut-off current
IDSS
VDS=700V, VGS=0V
-
-
1
A
Gate leakage current
IGSS
VDS=0V, VGS=30V
-
-
100
nA
RDS(ON)
VGS=10V, ID=0.5A
-
12.5
15.0

gfs
VDS=10V, ID=0.5A
-
0.5
-
124
155
-
17.7
22.1
-
2.6
3.3
-
7
-
-
21
-
-
13
-
-
27
-
-
4.1
5.1
-
1.8
-
-
0.9
-
Drain-source on-resistance
Forward transfer conductance
④
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
VGS=0V, VDS=25V,
f=1MHz
VDD=300V, ID=1.0A
RG=25Ω
③④
VDD=560V, VGS=10V
ID=1.0A
③④
Qgd
-
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Source current
IS
Test Condition
Min.
Typ.
Max.
-
-
1.0
-
-
4.0
Unit
Source current (Pulsed)
①
ISM
Integral reverse diode
in the MOSFET
Forward voltage
④
VSD
VGS=0V, IS=1.0A
-
-
1.4
V
Reverse recovery time
trr
-
190
-
ns
Reverse recovery charge
Qrr
IS=1.0A, VGS=0V
dIS/dt=100A/us
-
0.53
-
uC
A
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=50mH, IAS=0.8A, VDD=50V, RG=25Ω
③ Pulse Test : Pulse Width＜300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
KSD-T6Q007-000
2
SMK0170I
Electrical Characteristic Curves
Fig. 2 ID - VGS
Fig. 1 ID - VDS
℃
T
-
Fig. 4 IS - VSD
Fig. 3 RDS(on) - ID
℃
Fig. 6 VGS - QG
Fig. 5 Capacitance - VDS
℃
KSD-T6Q007-000
3
SMK0170I
Fig. 8 RDS(on) - TJ
Fig. 7 VDSS - TJ
C
C
Fig. 10 Safe Operating Area
Fig. 9 ID - Ta
`
*
KSD-T6Q007-000
4
Fig. 11 Gate Charge Test Circuit & Waveform
SMK0170I
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6Q007-000
5
SMK0170I
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
KSD-T6Q007-000
6
SMK0170I
Outline Dimension
unit : mm
KSD-T6Q007-000
7
SMK0170I
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T6Q007-000
8