KODENSHI SMK830FZ

SMK830FZ
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features




PIN Connection
High Voltage : BVDSS=500V(Min.)
Low Crss : Crss=33pF(Typ.)
Low gate charge : Qg=16nC(Typ.)
Low RDS(on) : RDS(on)=1.5Ω(Max.)
D
G
Ordering Information
Type No.
Marking
Package Code
SMK830FZ
SMK830
TO-220F-3L
(Z Forming)
GD
S
TO-220F-3L
S
Marking Diagram
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
AUK
AUK
GYMDD
YMDD
Δ
SMK830
SDB20D45
Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
30
V
TC=25℃
4.5
A
TC=100℃
2.8
A
Drain current (DC) *
ID
*
IDM
18
A
Drain power dissipation
PD
30
W
Drain current (Pulsed)
Avalanche current (Single)
②
IAS
4.5
A
Single pulsed avalanche energy
②
EAS
472
mJ
Avalanche current (Repetitive)
①
IAR
4.5
A
Repetitive avalanche energy
①
EAR
5.0
mJ
TJ
150
C
Tstg
-55~150
C
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Symbol
Typ.
Max.
Junction-case
Rth(J-C)
-
4.16
Junction-ambient
Rth(J-A)
-
62.5
KSD-T0O062-000
Unit
℃/W
1
SMK830FZ
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source breakdown voltage
V(BR)DSS
Gate threshold voltage
VGS(th)
Test Condition
Min. Typ. Max.
Unit
ID=250 ㎂, VGS=0V
500
-
-
V
ID=250 ㎂, VDS= VGS
2.0
-
4.0
V
Drain-source cut-off current
IDSS
VDS=500V, VGS=0V
-
-
1
㎂
Gate leakage current
IGSS
VDS=0V, VGS=30V
-
-
100
㎁
Drain-source on-resistance
④
RDS(on)
VGS=10V, ID=2.25A
-
1.2
1.5

Forward transfer conductance
④
gfs
VDS=10V, ID=2.25A
-
5.2
-
S
-
745
930
-
82
102
-
33
42
-
12
-
-
46
-
-
50
-
-
48
-
-
16
20
-
5.5
-
-
4.0
-
Input capacitance
Ciss
VGS=0V, VDS=25V
f=1 MHz
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
VDD=250V, ID=4.5A
RG=12Ω
td(off)
Fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
③④
VDS=400V, VGS=10V
ID=4.5A
③④
Qgd
㎊
㎱
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Source current (DC)
IS
Test Condition
Min.
Typ. Max. Unit
-
-
4.5
-
-
18
Source current (Pulsed)
①
ISP
Integral reverse diode
in the MOSFET
Forward voltage
④
VSD
VGS=0V, IS=4.5A
-
-
1.4
V
Reverse recovery time
trr
IS=4.5A, VGS=0V
-
263
-
Reverse recovery charge
Qrr
dIS/dt=100A/㎲
㎱
-
1.9
-
C
A
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=42mH, IAS=4.5A, VDD=50V, RG=27Ω
③ Pulse Test : Pulse width≤400 ㎲, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T0O062-000
2
SMK830FZ
Electrical Characteristic Curves
Fig. 2 ID - VGS
Fig. 1 ID - VDS
1
Fig. 4 IS - VSD
Fig. 3 RDS(on) - ID
Fig. 6 VGS - QG
Fig. 5 Capacitance - VDS
`
℃
KSD-T0O062-000
3
SMK830FZ
Fig. 7 V(BR)DSS - TJ
Fig. 8 RDS(on) - TJ
㎂
C
C
Fig. 10 Safe Operating Area
Fig. 9 ID - TC
*
KSD-T0O062-000
4
Fig. 11 Gate Charge Test Circuit & Waveform
SMK830FZ
Fig. 12 Switching Time Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0O062-000
5
SMK830FZ
Fig. 14 Peak Diode Recovery dv/dt Test Circuit & Waveform
rr
KSD-T0O062-000
6
SMK830FZ
Outline Dimension
unit : mm
KSD-T0O062-000
7
SMK830FZ
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T0O062-000
8