SUT101N Epitaxial planar PNP/NPN silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW(Max.) Package : SOT-26 Ordering Information Type NO. Marking Package Code SUT101N VX◇□ SOT-26 ◇: Hfe rank, □ : Year & Week Code PIN Assignment & Description 6 5 Tr1 4 Pin Description 1 Base(Tr 1) 2 Emitter(Tr 1/Tr 2) 3 Base(Tr 2) 4 Collector(Tr 2) 5 - 6 Collector(Tr 1) Tr2 1 2 3 [Pin Assignment] Absolute Maximum Ratings Characteristic (Ta=25°C) Symbol Rating Tr1 Tr2 Unit Collector-base voltage VCBO -40 40 V Collector-emitter voltage VCEO -32 32 V Emitter-base voltage VEBO -5 5 V IC -1 1 A(DC) ICP* -2 2 A(Pulse) Collector current Power dissipation Junction temperature Storage temperature range PC** 0.5 W TJ 150 °C Tstg -55~150 °C * : Single pulse, tp= 300 ㎲ ** : Total rating(Each terminal mounted on a recommended solder land) KSD-T5P005-001 1 SUT101N Electrical Characteristics [Tr1] Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50uA, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -32 - - V Emitter-Base breakdown voltage BVEBO IC=-50uA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-20V, IE=0 - - -0.1 μA Collector cut-off current IEBO VCE=-30V, IC=0 - - -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 - - -0.1 μA DC current gain hFE VCE=-3V, IC=-0.1A 100 - 320 - IC=-500mA, IB=-50mA - -0.2 -0.8 V VCE=-5V,IC=-50mA,f=30Mhz - 150 - MHz VCB=-10V, IE=0, f=1MHz - 20 30 pF Collector-Emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance Cob * hFE rank / O: 100~ 200, Y: 160~ 320 Electrical Characteristics [Tr2] Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50 ㎂, IE=0 40 - - V Collector-Emitter breakdown voltage BVCEO IC=1 ㎃, IB=0 32 - - V Emitter-Base breakdown voltage BVEBO IE=50 ㎂, IC=0 5 - - V Collector cut-off current ICBO VCB=20V, IE=0 - - 0.5 ㎂ Emitter cut-off current IEBO VEB=4V, IC=0 - - 0.5 ㎂ DC current gain hFE* VCE=3V, IC=0.1A 100 - 320 - IC=500 ㎃, IB=50 ㎃ - 0.15 0.4 V VCE=5V, IC=50 ㎃ - 150 - ㎒ VCB=10V, IE=0, f=1 ㎒ - 15 - ㎊ Collector-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob * : hFE rank / O : 100 ~ 200, Y : 160 ~ 320 KSD-T5P005-001 2 SUT101N Electrical Characteristic Curves [ Tr1 ] Fig. 1 PC - Ta ㎃ ㎽ Fig. 2 IC - VBE Fig. 4 hFE - IC Fig. 3 IC - VCE ㎃ ㎂ ㎂ ㎂ ㎂ ㎂ ㎂ ㎂ ㎂ ㎂ ㎃ [ Tr2 ] Fig. 5 VCE(sat) - IC ㎃ Fig. 6 IC - VBE ㎃ KSD-T5P005-001 3 SUT101N Fig. 8 VCE(sat) - IC ㎃ Fig. 7 IC - VCE ㎃ ㎃ ㎃ ㎃ ㎃ ㎃ ㎃ ㎃ ㎃ ㎃ Fig. 9 hFE - IC ㎃ KSD-T5P005-001 4 SUT101N SOT-26 Outline Dimension(mm) ※ Recommend PCB solder land KSD-T5P005-001 [Unit: mm] 5 SUT101N The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T5P005-001 6