LRC L2N7002LT1G

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
L2N7002LT1
N–Channel SOT–23
3
• Pb−Free Package is Available.
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
ID
ID
±ā115
±ā75
±ā800
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
IDM
VGS
VGSM
±ā20
±ā40
Vdc
Vpk
Symbol
Max
Unit
PD
225
1.8
mW
mW/°C
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
115 mAMPS
60 VOLTS
R DS(on) = 7.5 W
N - Channel
3
THERMAL CHARACTERISTICS
Characteristic
1
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
2
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
PD
300
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
TJ, Tstg
–ā55 to
+150
°C
Junction and Storage Temperature
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
2.4
3
702
W
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
1
2
Gate
Source
702
W
= Device Code
= Work Week
ORDERING INFORMATION
Device
L2N7002LT1
L2N7002LT1G
Marking
Shipping
702
3000 Tape & Reel
702(Pb-Free)
3000 Tape & Reel
L2N7002LT1–1/3
LESHAN RADIO COMPANY, LTD.
L2N7002LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
–
–
Vdc
IDSS
–
–
–
–
1.0
500
µAdc
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
–
–
100
nAdc
Gate–Body Leakage Current, Reverse
(VGS = –ā20 Vdc)
IGSSR
–
–
–100
nAdc
VGS(th)
1.0
1.6
2.5
Vdc
ID(on)
500
–
–
mA
–
–
–
–
3.75
0.375
–
–
–
–
1.4
–
1.8
–
7.5
13.5
7.5
13.5
gFS
80
–
–
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
–
17
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
–
10
25
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
–
2.5
5.0
pF
td(on)
–
7
20
ns
td(off)
–
11
40
ns
VSD
–
–
–1.5
Vdc
IS
–
–
–115
mAdc
ISM
–
–
–800
mAdc
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
rDS(on)
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
Vdc
Ohms
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V DD = 25 Vdc , ID ^ 500 mAdc,
RG = 25 Ω, RL = 50 Ω, Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 11.5 mAdc, VGS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
L2N7002LT1–2/3
LESHAN RADIO COMPANY, LTD.
L2N7002LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.0
VDS = 10 V
TA = 25°C
1.6
1.4
9V
1.2
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
0
0.8
VGS = 10 V
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
1.8
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
9.0
125°C
0.6
0.4
0.2
10
0
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-ā60
-ā20
+ā20
+ā60
T, TEMPERATURE (°C)
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 2. Transfer Characteristics
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
Figure 1. Ohmic Region
2.0
25°C
-ā55°C
+ā100
Figure 3. Temperature versus Static
Drain–Source On–Resistance
+ā140
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-ā60
-ā20
+ā20
+ā60
T, TEMPERATURE (°C)
+ā100
+ā140
Figure 4. Temperature versus Gate
Threshold Voltage
L2N7002LT1–3/3