LRC L2SA1037AKSLT1

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
L2SA1037AK*LT1
3
COLLECTOR
3
1
BASE
1
2
EMITTER
2
SOT– 23
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
–50
V
Collector–Base Voltage
V CBO
–60
V
Emitter–Base Voltage
V
–6.0
V
EBO
Collector Current — Continuous
IC
–150
mAdc
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55 ~+150
°C
DEVICE MARKING
L2SA1037AKQLT1 =FQ L2SA1037AKSLT1 =G3F L2SA1037AKRLT1 =FR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = –1 mA)
Emitter–Base Breakdown Voltage
(IE = – 50 µA)
Collector–Base Breakdown Voltage
(IC = – 50 µA)
Collector Cutoff Current
(VCB = – 60 V)
Emitter cutoff current
(VEB = – 6 V)
Collector-emitter saturation voltage
(IC/ IB = – 50 mA / – 5m A)
DC current transfer ratio
(V CE = – 6 V, I C= –1mA)
Transition frequency
(V CE = – 12 V, I E= 2mA, f=30MHz )
Output capacitance
(V CB = – 12 V, I E= 0A, f =1MHz )
Symbol
Min
Typ
Max
Unit
V
– 50
—
—
V
V (BR)EBO
–6
—
—
V
V
– 60
—
—
V
I CBO
—
—
– 0.1
µA
I EBO
—
—
– 0.1
µA
V CE(sat)
—
—
-0.5
V
h FE
120
––
560
––
fT
—
140
––
MHz
C ob
—
4.0
5.0
pF
(BR)CEO
(BR)CBO
h FE values are classified as follows:
*
hFE
Q
120~270
R
180~390
S
270~560
LM35–1/3
LESHAN RADIO COMPANY, LTD.
L2SA1037AK*LT1
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
–50
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
–20
–35.0
–10
VCE= –10 V
T A = 100°C
25°C
– 40°C
–10
–50
–2
–1
–0.5
T A = 25°C
–28.0
–8
–24.5
–21.0
–6
–17.5
–14.0
–4
–10.5
–7.0
–2
–3.5µA
–0.2
–0.1
I B =0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
0
–1.6
–0.4
–0.8
–1.2
–1.6
–2.0
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
–100
500
T A = 25°C
–80
–60
VCE= –5 V
–3V
–1V
T A = 25°C
500
450
400
350
300
h FE, DC CURRENT GAIN
I C, COLLECTOR CURRENT (mA)
–31.5
–250
–200
–150
–40
–100
–20
–50 µA
200
100
50
I B =0
0
0
–1
–2
–3
–4
–5
–0.2
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
–0.5
–1
–2
–5
–10
–20
–50
–100
I C, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
Fig.5 DC current gain vs. collector current ( )
500
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
collector current ( )
T A = 100°C
h FE, DC CURRENT GAIN
25°C
–40°C
200
100
50
VCE= – 6V
–0.2
–0.5
–1
–2
–5
–10
–20
I C, COLLECTOR CURRENT (mA)
–50
–100
–1
T A = 25°C
–0.5
–0.2
I C /I B = 50
20
–0.1
10
–0.05
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I C, COLLECTOR CURRENT (mA)
LM35–2/3
LESHAN RADIO COMPANY, LTD.
L2SA1037AK*LT1
Fig.8 Gain bandwidth product vs. emitter current
1000
–1
T A = 25°C
V CE = –12V
f r , TRANSITION FREQUENCY(MHz)
I C /I B = 10
–0.5
–0.2
T A = 100°C
25°C
–40°C
–0.1
–0.05
–0.2
–0.5
–1
–2
–5
–10
–20
–50
500
200
100
50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I E, EMITTER CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C ob , COLLECTOR OUTPUT CAPACITANCE( pF)
C ib , EMITTER INPUT CAPACITANCE (pF)
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
20
T A = 25°C
f =1MHz
I E = 0A
I C = 0A
C ib
10
C ob
5
2
–0.5
–1
–2
–5
–10
–20
V CB, COLLECTOR TO BASE VOLTAGE (V)
V EB, EMITTER TO BASE VOLTAGE (V)
LM35–3/3