SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
•
•
•
•
Low rDS(on) . . . 0.3 Ω Typ
High-Voltage Output . . . 60 V
Pulsed Current . . . 8 A Per Channel
Fast Commutation Speed
DW PACKAGE
(TOP VIEW)
DRAIN4
GATE4
GND
GND
DRAIN5
GATE5
GND
GND
GATE6
DRAIN6
description
The TPIC5601 is a monolithic power DMOS array
that consists of six electrically isolated N-channel
enhancement-mode DMOS transistors, three of
which are configured with a common source. The
TPIC5601 is offered in a 20-pin wide-body
surface-mount (DW) package.
The TPIC5601 is characterized for operation over
the case temperature range of − 40°C to 125°C.
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
SOURCE1
NC
GATE1
DRAIN1
DRAIN2
SOURCE2
GATE2
DRAIN3
GATE3
SOURCE3
NC − No internal connection
schematic
DRAIN1
SOURCE2 GATE2 DRAIN2
15
14
16
17
Q1
GATE1
SOURCE1
DRAIN4
18
Z1
D1
Z2
D2
D3
Z3
12
20
11
1
10
Q5
GATE3
SOURCE3
DRAIN6
Q6
2
9
Z4
Z5
5
DRAIN5 6
GATE5
DRAIN3
Q3
Q2
Q4
GATE4
13
Z6
GATE6
3, 4, 7, 8
GND
Copyright 1995, Texas Instruments Incorporated
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#'$#1 "** (""!'#'$,
• DALLAS, TEXAS 75265
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POST OFFICE BOX 655303
POST OFFICE BOX 1443
1
SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
absolute maximum ratings over operating case temperature range (unless otherwise noted)†
Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Source-to-GND voltage (Q1, Q2, and Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q1, Q2, and Q3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q4, Q5, and Q6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Continuous drain current, each output, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 A
Continuous source-to-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7 A
Pulsed drain current, ID, each output, TC = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . . . . . . 8 A
Single-pulse avalanche energy, EA, TC = 25°C (see Figures 4 and 16) . . . . . . . . . . . . . . . . . . . . . . . . . . 36 mJ
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
DISSIPATION RATING TABLE
2
PACKAGE
TC ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TC = 25°C
TC = 125°C
POWER RATING
DW
1125 mW
9.0 mW/°C
225 mW
•
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•
SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Gate-to-source threshold voltage
ID = 250 µA,
ID = 1 mA,
V(BR)
Reverse drain-to-GND breakdown voltage (across
D1, D2, and D3)
Drain-to-GND current = 250 µA
VDS(on)
Drain-to-source on-state voltage
ID = 1.7 A,
See Notes 2 and 3
VF
Forward on-state voltage, GND-to-drain
ID = 1.7 A (D1, D2, D3),
See Notes 2 and 3
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1.7 A,
VGS = 0 (Z1, Z2, Z3, Z4, Z5, Z6),
See Notes 2 and 3
IDSS
Zero-gate-voltage drain current
VDS = 48 V,
VGS = 0
TC = 25°C
TC = 125°C
IGSSF
IGSSR
Forward gate current, drain short circuited to source
VGS = 16 V,
VSG = 16 V,
VDS = 0
VDS = 0
Leakage current, drain-to-GND
VR = 48 V
Static drain-to-source on-state resistance
V(BR)DSX
VGS(th)
Ilkg
rDS(on)
Drain-to-source breakdown voltage
Reverse gate current, drain short circuited to source
gfs
Forward transconductance
Ciss
Short-circuit input capacitance, common source
Coss
Short-circuit output capacitance, common source
Crss
Short-circuit reverse-transfer capacitance,
common source
VGS = 0
VDS = VGS
MIN
TYP
MAX
1.85
2.2
60
1.5
V
100
VGS = 10 V,
UNIT
V
V
0.51
0.6
7.5
1
V
V
1.2
V
0.05
1
0.5
10
10
100
nA
10
100
nA
TC = 25°C
TC = 125°C
0.05
1
0.5
10
VGS = 10 V,
ID = 1.7 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 25°C
0.3
0.35
TC = 125°C
0.41
0.5
VDS = 15 V,
See Notes 2 and 3
ID = 1 A,
VDS = 25 V,
f = 1 MHz
µA
A
µA
A
Ω
1.2
VGS = 0,
1.75
S
190
240
100
125
40
50
pF
NOTES: 2. Technique should limit TJ − TC to 10°C maximum, pulse duration ≤ 5 ms.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
source-to-drain diode characteristics, TC = 25°C
PARAMETER
trr(SD)
Reverse-recovery time
QRR
Total diode charge
trr(SD)
Reverse-recovery time
QRR
Total diode charge
TEST CONDITIONS
IS = 1 A,
VGS = 0,
di/dt = 100 A/µs,
See Figure 1
VDS = 48 V,
(Z1, Z2, Z3),
IS = 1 A,
VGS = 0,
di/dt = 100 A/µs,
See Figure 1
VDS = 48 V,
(Z4, Z5, Z6),
MIN
TYP
MAX
UNIT
65
ns
0.12
µC
240
ns
0.9
µC
GND-to-drain diode characteristics, TC = 25°C (see schematic, D1, D2, and D3)
PARAMETER
trr
QRR
Reverse-recovery time
Total diode charge
TEST CONDITIONS
IF = 1 A,
di/dt = 100 A/µs,
•
VDS = 48 V,
See Figure 1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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•
MIN
TYP
MAX
UNIT
260
ns
2.2
µC
3
SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
resistive-load switching characteristics, TC = 25°C
PARAMETER
td(on)
td(off)
Turn-on delay time
tr2
tf2
Rise time
Qg
Total gate charge
TEST CONDITIONS
Turn-off delay time
RL = 25 Ω,
See Figure 2
VDD = 25 V,
tf1 = 10 ns,
MIN
tr1 = 10 ns,
Fall time
VDS = 48 V,
See Figure 3
ID = 1 A,
VGS = 10 V,
TYP
MAX
32
65
40
80
15
30
25
50
5
6
0.5
0.6
1.9
2.3
QGS
Threshold gate-to-source charge
QGD
Gate-to-drain charge
L(drain)
Internal drain inductance
5
L(source)
Internal source inductance
5
Rg
Internal gate resistance
UNIT
ns
nC
nH
Ω
0.25
thermal resistance
PARAMETER
TEST CONDITIONS
RθJA
Junction-to-ambient thermal resistance
RθJP
Junction-to-pin thermal resistance
All outputs with equal power,
MIN
TYP
90
See Note 4
27
NOTE 4: Package mounted on an FR4 printed-circuit board with no heat sink.
PARAMETER MEASUREMENT INFORMATION
3
TJ = 25°C
I S − Source-to-Drain Diode Current − A
2
trr(SD)
1
Reverse di/dt = 100 A/µs
0
25% of IRM†
−1
−2
IRM(REC)†
−3
0
50
100
150
200
250
300
Time − ns
† IRM(REC)= maximum recovery current
Figure 1. Reverse-Recovery-Current Waveform of Source-to-Drain Diode
4
•
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•
MAX
UNIT
°C/W
SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
PARAMETER MEASUREMENT INFORMATION
VDD = 25 V
tr1
RL
Pulse Generator
10 V
VDS
VGS
0V
VGS
50 Ω
td(off)
td(on)
DUT
Rgen
tf1
50 Ω
tr2
tf2
CL 30 pF
(see Note A)
VDD
VDS
VDS(on)
VOLTAGE WAVEFORMS
TEST CIRCUIT
NOTE A: CL includes probe and jig capacitance.
Figure 2. Resistive-Switching Test Circuit and Voltage Waveforms
Current
Regulator
12-V
Battery
0.2 µF
VDS
Qg
Same Type
as DUT
50 kΩ
10 V
0.3 µF
Qgs(th)
VDD
0
VGS
DUT
IG = 1 µA
Qgd
Gate Voltage
Time
IG CurrentSampling Resistor
ID CurrentSampling Resistor
Qgs = Qg − Qgd
VOLTAGE WAVEFORM
TEST CIRCUIT
Figure 3. Gate-Charge Test Circuit and Voltage Waveform
•
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•
5
SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
PARAMETER MEASUREMENT INFORMATION
VDD = 25 V
656 µH
Pulse Generator
(see Note A)
15 V
VGS
VDS
ID
tav
tw
0V
IAS
(see Note B)
VGS
50 Ω
ID
DUT
0V
Rgen
50 Ω
V(BR)DSX = 60 V Min
VDS
0V
VOLTAGE AND CURRENT WAVEFORMS
TEST CIRCUIT
NOTES: A. The pulse generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω.
B. Input pulse duration (tw) is increased until peak current IAS = 8 A.
I
V
t av
AS
(BR)DSX
Energy test level is defined as E
+
+ 36 mJ, where
AS
2
tav = Avalanche time
Figure 4. Single-Pulse Avalanche-Energy Test Circuit and Waveforms
TYPICAL CHARACTERISTICS
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
2.5
0.5
ID = 1.7 A
VGS = 10 V
2
ID = 1 mA
1.5
ID = 100 µA
1
0.5
0
− 40 − 20
0
20
40
60
0.4
On-State Resistance − Ω
r DS(on) − Static Drain-to-Source
VGS(th) − Gate-to-Source Threshold Voltage − V
GATE-TO-SOURCE THRESHOLD VOLTAGE
vs
JUNCTION TEMPERATURE
VGS = 15 V
0.3
0.2
0.1
0
− 40 − 20
80 100 120 140 160
0
Figure 5
6
20
40
60
80 100 120 140 160
TJ − Junction Temperature − °C
TJ − Junction Temperature − °C
Figure 6
•
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•
SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
TYPICAL CHARACTERISTICS
DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
1
0.9
0.8
0.7
5
TJ = 25°C
nVGS = 0.2 V
TJ = 25°C
Unless
Otherwise Noted
VGS = 10 V
VGS = 15 V
4
0.6
I D − Drain Current − A
On-State Resistance − Ω
r DS(on) − Static Drain-to-Source
STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE
vs
DRAIN CURRENT
0.5
0.4
VGS = 10 V
0.3
VGS = 15 V
0.2
3
VGS = 4 V
2
1
VGS = 3 V
0.1
0.01
0.10
1
ID − Drain Current − A
0
10
0
2
4
6
8 10 12 14 16 18 20
VDS − Drain-to-Source Voltage − V
Figure 7
Figure 8
DRAIN CURRENT
vs
GATE-TO-SOURCE VOLTAGE
DISTRIBUTION OF
FORWARD TRANSCONDUCTANCE
8
0.25
Total Number of Units = 2196
TJ = 25°C
TJ = − 40°C
7
TJ = 25°C
I D − Drain Current − A
6
0.15
0.1
TJ = 75°C
TJ = 125°C
TJ = 150°C
5
4
3
2
0.05
0
2.125
2.05
1.975
1.9
1.825
1.75
1.675
1.6
1.525
1.45
0
1.375
1
1.3
Percentage of Units − %
0.2
0
1
2
3
4
5
6
7
8
9
10
VGS − Gate-to-Source Voltage − V
gfs − Forward Transconductance − S
Figure 9
Figure 10
•
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•
7
SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
TYPICAL CHARACTERISTICS
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN VOLTAGE
CAPACITANCE
vs
DRAIN-TO-SOURCE VOLTAGE
400
360
I SD − Source-to-Drain Diode Current − A
f = 1 MHz
TJ = 25°C
C − Capacitance − pF
320
280
240
Ciss
200
160
Coss
120
80
Crss
40
8
6
4
2
1
0.6
TJ = 125°C
TJ = − 40°C
0.4
TJ = 150°C
TJ = 25°C
0.2
TJ = 75°C
0
0.1
0
4
8
12
16
20
24
28
32
36
40
0.1
VDS − Drain-to-Source Voltage − V
1
VSD − Source-to-Drain Voltage − V
Figure 11
Figure 12
DRAIN-TO-SOURCE VOLTAGE AND
GATE-TO-SOURCE VOLTAGE
vs
GATE CHARGE
REVERSE-RECOVERY TIME
vs
REVERSE di/dt
300
14
12
VDD = 20 V
50
10
VDD = 30 V
40
8
30
6
20
4
VDD = 48 V
10
trr − Reverse-Recovery Time − ns
60
VGS − Gate-to-Source Voltage − V
VDS − Drain-to-Source Voltage − V
70
ID = 1 A
TJ = 25°C
See Figure 3
10
2
IS = 1 A
TJ = 25°C
250 See Figure 1
200
Q4, Q5, and Q6
150
100
Q1, Q2, and Q3
50
VDD = 20 V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
0
100
Qg − Gate Charge − nC
Figure 13
8
200
300
400
500
Reverse di/dt − A/µs
Figure 14
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•
600
700
SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
THERMAL INFORMATION
MAXIMUM PEAK-AVALANCHE CURRENT
vs
TIME DURATION OF AVALANCHE
MAXIMUM DRAIN CURRENT
vs
DRAIN-TO-SOURCE VOLTAGE
100
I AS − Maximum Peak-Avalanche Current − A
100
I RM(REC) − Maximum Drain Current − A
TC = 25°C
ÁÁ
ÁÁ
ÁÁ
1 µs†
10
10 ms†
1 ms†
500 µs†
1
DC Conditions
0.1
0.1
1
10
VDS − Drain-to-Source Voltage − V
See Figure 4
10
TC = 25°C
TC = 125°C
1
0.01
100
† Less than 0.1 duty cycle
0.1
1
10
tav‡ − Time Duration of Avalanche − ms
100
‡ Non-JEDEC symbol for avalanche time.
Figure 15
Figure 16
•
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•
9
SLIS022B − MARCH 1994 − REVISED OCTOBER 1995
THERMAL INFORMATION
DW PACKAGE†
NORMALIZED JUNCTION - TO -AMBIENT THERMAL RESISTANCE
vs
PULSE DURATION
RθJA − Normalized Junction-to-Ambient Thermal Resistance − °C/W
10
DC Conditions
1
d = 0.5
d = 0.2
d = 0.1
0.1
d = 0.05
d = 0.02
0.01
d = 0.01
Single Pulse
0.001
tc
tw
ID
0
0.0001
0.0001
0.001
0.1
0.01
tw − Pulse Duration − s
† Device mounted on FR4 printed-circuit board with no heatsink
NOTE A: ZθA(t) = r(t) RθJA
tw = pulse duration
tc = cycle time
d = duty cycle = tw / tc
Figure 17
10
•
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•
1
10
PACKAGE OPTION ADDENDUM
www.ti.com
8-Apr-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
TPIC5601DW
OBSOLETE
SOIC
DW
Pins Package Eco Plan (2)
Qty
20
TBD
Lead/Ball Finish
Call TI
MSL Peak Temp (3)
Call TI
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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dataconverter.ti.com
Consumer Electronics
www.ti.com/consumer-apps
DLP® Products
www.dlp.com
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DSP
dsp.ti.com
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logic.ti.com
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Power Mgmt
power.ti.com
Transportation and
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www.ti.com/automotive
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
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www.ti-rfid.com
Wireless
www.ti.com/wireless-apps
RF/IF and ZigBee® Solutions
www.ti.com/lprf
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