LSU425 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U425 The LSU425 is high input impedance Monolithic Dual N-Channel JFET The LSU425 monolithic dual n-channel JFET is designed to provide very high input impedance for differential amplification and impedance matching. Among its many unique features, this series offers operating gate current specified at -500 fA. The LSU425 is a direct replacement for discontinued Siliconix U425. The 6 Pin SOT-23 package provides ease of manufacturing, and a lower cost assembly option. (See Packaging Information). LSU425 Applications: Ultra Low Input Current Differential Amps High-Speed Comparators Impedance Converters ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Breakdown Voltage 40 BVGGO Gate‐To‐Gate Breakdown 40 TRANSCONDUCTANCE YfSS Full Conduction 300 YfS Typical Operation 120 DRAIN CURRENT IDSS Full Conduction 60 GATE VOLTAGE VGS(off) Pinchoff voltage ‐‐ VGS Operating Range ‐‐ GATE CURRENT IGmax. Operating ‐‐ ‐IGmax. High Temperature ‐‐ IGSSmax. At Full Conduction ‐‐ ‐IGSSmax. High Temperature ‐‐ OUTPUT CONDUCTANCE YOSS Full Conduction ‐‐ YOS Operating ‐‐ COMMON MODE REJECTION CMR ‐20 log | ∆V GS1‐2/ ∆VDS| ‐‐ ‐20 log | ∆V GS1‐2/ ∆VDS| ‐‐ NOISE NF Figure ‐‐ en Voltage ‐‐ ‐‐ CAPACITANCE CISS Input ‐‐ CRSS Reverse Transfer ‐‐ FEATURES HIGH INPUT IMPEDANCE HIGH GAIN LOW POWER OPERATION ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) IG = 0.25pA MAX gfs = 120µmho MIN VGS(OFF) = 2V MAX Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS |∆V GS1‐2 /∆T|max. DRIFT VS. 25 µV/°C VDG=10V, ID=30µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 15 mV VDG=10V, ID=30µA TYP. 60 ‐‐ ‐‐ 200 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.1 90 90 ‐‐ 20 10 ‐‐ ‐‐ MAX. ‐‐ ‐‐ 1500 350 1000 2.0 1.8 .25 250 1.0 1.0 10 3.0 ‐‐ ‐‐ 1 70 ‐‐ 3.0 1.5 UNITS V V µmho µmho µA V V pA pA pA nA µmho µmho dB dB dB nV/√Hz pF pF CONDITIONS VDS = 0 IG =1nA IG = 1µA ID = 0 IS= 0 VDS = 10V VGS = 0V f = 1kHz VDG = 10V ID = 30µA f = 1kHz VDS = 10V VGS = 0V VDS = 10V ID = 1nA VDG = 10V ID = 30µA VDG = 10V ID = 30µA TA = +125°C VDS = 0V VGS = 20V TA = +125°C VDS = 10V VGS = 0V VDG = 10V ID = 30µA ∆VDS = 10 to 20V ID = 30µA ∆VDS = 5 to 10V ID = 30µA VDG = 10V ID = 30µA RG = 10MΩ f = 10Hz VDG = 10V ID = 30µA f = 10Hz VDG = 10V ID = 30µA f = 1KHz VDS= 10V VGS = 0 f = 1MHz Click To Buy Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired Available Packages: LSU425 in SOT-23 LSU425 available as bare die Please contact Micross for full package and die dimensions Email: [email protected] Micross Components Europe Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.