Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Case Styles Features •fT to 9 GHz •Low Noise Figure •High Associated Gain •Hermetic and Surface Mount Packages Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els •Industry Standard Description The MP4T645 family of high gain-bandwidth, small signal silicon bipolar transistors is well suited for use in amplifiers to approximately 4 GHz, and in oscillators to approximately 10 GHz. These industry standard transistors freature low noise figure at high collector current, which produces v ery good associated gain and wide dynamic range. The MP4T645 series transistors are av ailable in a hermetic microstrip package (MP4T64535), in the plastic SOT-23 package (MP4T64533), in chip form (MP4T64500), and in the SOT-143 package (MP4T64539). The MP4T645 series is av ailable in other plastic and hermetic packages as well. The chip and hermetically packaged transistors can be screened to a JANTXV equiv alent lev el. SOT-23 SOT-143 Chip Applications The MP4T645 family of bipolar NPN transistors can be used for low noise, high associated gain. large dynamic range amplifiers up to approximately 4 GHz. These transistors can also be used as preamplifier or driv er stages in the same frequency range. The MP4T645 family of bipolar NPN transistors can also be used for oscillators or VCOs up to approximately 10 GHz. The passiv ation consists of silicon dioxide, commonly known as thermal oxide, and silicon nitride to produce v ery low 1/f noise in both amplifiers and oscillators. Micro-X Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 1 Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series Absolute Maximum Ratings MP4T645 Series Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 1.5 V Collector Current IC 65 mA Junction Operating Temperature Tj 200°C Storage Temperature Chip or Ceramic Packages Plastic Packages -65°C to +200°C -65°C to +125°C Total Power Dissipation at 25°C Derate Linearly to: +150°C Chip 400 mW +125°C Plastic Package (SOT-23) 200 mW +150°C Ceramic Package (Micro-X) 300 mW Electrical Specifications @ 25°C MP4T645 Series Parameter of Test MP4T64500 MP4T64535 MP4T64533 Condition Symbol Units Chip SOT-23 Micro-X Gain Bandwidth Product VCE = 8 volts I C = 20 mA fT GHz 10 typ 8 typ 9 typ Insertion Power Gain VCE = 8 volts I C = 20 mA f = 1 GHz f = 2 GHz f = 4 GHz |S21E|2 dB 18 typ 11 min 7 typ 16 typ 10 min 17 typ 10 min 6.5 typ VCE = 8 volts I C = 7 mA f = 1 GHz f = 2 GHz NF 1.7 max 2.0 typ 1.7 max 2.5 typ 1.7 max 2.0 typ VCE = 8 volts I C = 7 mA f = 1 GHz f = 2 GHz GTU (max) 18 typ 11 typ 16 typ 10 typ 17 typ 11 typ VCE = 8 volts I C = 10 mA f = 2 GHz f = 4 GHz MAG 14 typ 12 typ 13 typ 10 typ 14 typ 11.5 typ VCE = 8 volts I C = 10 mA f = 1 GHz f = 4 GHz P1dB 16 typ 11 typ 16 typ 11 typ 16 typ 11 typ Noise Figure Unilateral Gain Maximum Available Gain Power Out at 1 dB Compression Note: dB dB dB dBm The electrical characteristics of the MP4T64539 (SOT-143) are very similar to those of the MP4T64533 (SOT-23). Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 2 Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series Electrical Specifications @ 25°C MP4T645 Series Parameter Condition Symbol Min Typical Max Units Collector Cut-off Current VCB = 8 volts I E = 0 µA I CBO 100 nA Emitter Cut-off Current VEB = 1 volt I C = 0 µA I EBO 1 µA Forward Current Gain VCE = 8 volts I C = 7 mA hFE 30 125 250 Collector-Base Junction Capacitance VCB = 10 volts I E = 0 µA f = 1 MHz CCO 0.3 0.6 pF Typical Scattering Parameters in the MIcro-X Package MP4T64535, VCE = 8 Volts, IC = 7 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.583 0.569 -114 -153 9.315 5.399 116.1 94.7 0.052 0.063 43.6 39.0 0.573 0.406 -42.6 -53.0 1500 0.573 -173 3.807 82.0 0.072 40.0 0.357 -57.1 2000 0.587 170 2.980 72.0 0.082 42.5 0.313 -61.8 2500 0.598 159 2.479 62.7 0.092 44.0 0.299 -71.7 3000 0.616 150 2.132 54.8 0.103 45.2 0.304 -78.5 3500 0.645 142 1.935 47.0 0.118 45.5 0.289 -86.5 4000 0.675 132 1.782 38.5 0.130 45.7 0.281 -96.6 4500 0.705 124 1.631 29.6 0.143 45.5 0.292 -105.5 5000 0.749 115 1.538 22.0 0.159 44.5 0.281 -114.1 5500 0.791 106 1.445 14.4 0.176 43.6 0.283 -125.7 6000 0.832 96 1.395 6.1 0.188 42.3 0.306 -135.0 MP4T64535, VCE = 8 Volts, IC = 10 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.562 0.564 -128 -161 10.477 5.845 111.9 92.1 0.044 0.056 44.5 44.0 0.515 0.358 -46.2 -53.8 1500 0.575 176 4.088 80.5 0.068 46.5 0.313 -57.2 2000 0.592 166 3.185 70.9 0.080 49.0 0.276 -62.3 2500 0.601 156 2.638 62.0 0.092 49.7 0.268 -71.7 3000 0.618 148 2.266 54.5 0.105 50.1 0.272 -78.3 3500 0.648 139 2.053 46.9 0.122 49.4 0.259 -87.0 4000 0.677 130 1.892 38.6 0.136 48.7 0.253 -96.9 4500 0.706 122 1.734 29.8 0.150 47.9 0.264 -106.0 5000 0.749 113 1.634 22.3 0.167 46.1 0.257 -115.1 5500 0.790 104 1.532 14.8 0.184 44.4 0.259 -126.3 6000 0.831 95 1.482 6.4 0.196 42.6 0.278 -136.0 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series Typical Scattering Parameters in the MIcro-X Package (Cont’d) MP4T64535, VCE = 8 Volts, IC = 20 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.536 0.565 -154 -177 11.788 6.309 104.0 87.5 0.033 0.046 49.8 55.7 0.390 0.284 -46.8 -53.2 1500 0.579 170 4.350 77.0 0.062 57.7 0.270 -54.6 2000 0.592 160 3.368 68.6 0.077 59.3 0.237 -57.5 2500 0.612 151 2.798 60.1 0.093 58.0 0.226 -70.0 3000 0.630 142 2.390 52.6 0.108 56.5 0.243 -77.2 3500 0.660 134 2.156 45.4 0.126 54.4 0.231 -84.4 4000 0.691 125 1.984 37.2 0.141 52.6 0.223 -95.8 4500 0.719 117 1.809 28.4 0.155 50.9 0.240 -105.2 5000 0.760 109 1.697 21.3 0.173 48.5 0.229 -112.6 5500 0.803 101 1.594 13.8 0.192 46.0 0.229 -112.3 6000 0.844 92 1.540 6.0 0.210 44.2 0.258 -136.2 Typical Scattering Parameters in the SOT-23 Package MP4T64533, VCE = 8 Volts, IC = 7 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.421 0.257 -95 -149 7.378 4.384 126.4 118.9 0.062 0.100 77.9 97.9 0.519 0.402 -36.3 -36.9 1500 0.232 -176 3.082 123.3 0.140 116.2 0.368 -39.6 2000 0.238 157 2.408 129.2 0.183 130.9 0.354 -44.7 2500 0.256 140 2.005 136.3 0.224 145.7 0.346 -51.6 3000 0.279 126 1.734 143.2 0.274 160.8 0.339 -58.8 3500 0.310 116 1.498 153.3 0.308 172.0 0.331 -68.5 4000 0.338 106 1.367 163.5 0.350 173.6 0.320 -80.1 4500 0.359 97 1.284 173.8 0.402 161.0 0.327 -90.6 MP4T64533, VCE = 8 Volts, IC = 10 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.299 0.216 -116 -161 8.385 4.558 119.4 116.9 0.057 0.099 82.1 102.3 0.451 0.354 -33.9 -33.2 1500 0.215 172 3.185 122.7 0.142 119.5 0.332 -37.7 2000 0.230 151 2.487 129.0 0.188 132.9 0.332 -44.0 2500 0.247 134 2.064 136.4 0.230 146.9 0.332 -50.1 3000 0.267 123 1.783 143.8 0.281 161.5 0.322 -56.1 3500 0.299 114 1.548 153.9 0.315 172.5 0.310 -66.4 4000 0.328 104 1.410 164.0 0.357 173.6 0.299 -79.2 4500 0.352 96 1.320 174.5 0.408 161.3 0.310 -90.1 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 4 Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series MP4T645 Series Typical Performance Curves NOMINAL COLLECTOR-BASE CAPACITANCE vs COLLECTOR-BASE VOLTAGE (MP4T64535) 500 0.6 450 0.55 MP4T64500 Chip on Infinite Heat Sink 400 COLLECTOR-BASE CAPACITANCE (CCB) (pF) TOTAL POWER DISSIPATION (mW) NOMINAL POWER DERATING CURVES 350 300 250 MP4T64535 in Micro-X Package 200 150 MP4T64533 in SOT-23 Package 100 50 0.5 0.45 0.4 0.35 0.3 0.25 0.2 1 0 0 25 50 75 100 125 150 10 100 COLLECTOR-BASE VOLTAGE (VCB) (Volts) 175 AMBIENT TEMP (C) NOMINAL GAIN vs COLLECTOR CURRENT at f = 1.5 GHz, VCE = 8 Volts (MP4T64535) NOMINAL GAIN vs FREQUENCY at VCE = 8 VOLTS, IC = 10 mA (MP4T64535) 15 24 14 13 GAIN (dB) GAIN (dB) 20 16 GTU (MAX) 12 8 12 11 MAG 10 GTU (MAX) 9 8 |S21E|2 7 4 |S21E|2 6 0 1 5 2 1 10 10 100 COLLECTOR CURRENT (mA) FREQUENCY (GHz) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 5 Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series Typical Performance Curves (Cont’d) NOMINAL DC CURRENT GAIN vs COLLECTOR CURRENT at VCE = 8 VOLTS (MP4T64535) NOMINAL GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (MP4T64535) 1000 GAIN BANDWIDTH PRODUCT (fT) (GHz) DC CURRENT GAIN (hFE) 20 100 10 2 1 10 1 100 10 NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs COLLECTOR CURRENT at f = 1 GHz and VCE = 8 VOLTS(MP4T64535) NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs FREQUENCY at VCE = 8 VOLTS, COLLECTOR CURRENT = 7 mA (MP4T64535) 13 NOISE ASSOCIATED FIGURE(dB) GAIN (dB) 100 NOISE ASSOCIATED FIGURE(dB) GAIN (dB) 100 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) ASSOCIATED GAIN 10 NOISE FIGURE Associated Gain 11 9 7 5 50 OHM Noise Figure 3 Optimum Match for Noise Figure 1 1 0.1 1 FREQUENCY (GHz) 10 0 5 10 15 COLLECTOR CURRENT (mA) 20 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 6 Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series Typical Performance Curves (Cont’d) NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at f = 1 and 4 GHz, VCE = 8 VOLTS (MP4T64535) 24 POWER OUT @ 1 dB COMPRESSION (dBm) 22 20 P1dB at 1 GHz 18 16 14 12 10 P1dB at 4 GHz 8 6 0 10 20 30 40 COLLECTOR CURRENT (mA) Case Styles MP4T64533 MP4T64533 SOT-23 F N A D Collector B M G K L H Base E J C Emitter DIM. A B C D E F G H J K L INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 DIM. M N GRADIENT 10°max. 1 2°. . . 30° MILLIMETERS MIN. MAX. 1.12 0.10 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60 NOTE: 1. Applicable on all sides Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 7 Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series Case Styles (Cont’d) MP4T64535 MP4T64535 Micro-X DIM. A B C D E F G H Emitter F 4 PLCS. E H Collector Base B Emitter INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45° MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.46 0.56 3.81 0.08 0.15 45° A C MP4T64500 D G DIM. A B C D E (Dia.) F (chip thickness) MP4T64500 Case Style 00 (Chip) E BASE C INCHES 0.013 0.013 0.004 0.0005 0.0012 0.0045 MILLIMETERS 0.325 0.325 0.110 0.013 0.030 0.114 B MP4T64539 DIM. A B C D E F G H J K L M INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.030 0.035 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.040 typical 0.103 0.024 DIM. N P GRADIENT 10°max. 1 2°. . . 30° EMITTER D A MP4T64539 Case Style SOT-143 Base Emitter G P A J B N H L M E MILLIMETERS MIN. MAX. 1.10 0.10 1.00 0.35 0.50 0.75 0.90 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.70 typical 2.60 0.60 D F C K NOTE: 1. Applicable on all sides Collector Emitter Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 8