Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features •High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz •High Gain Bandwidth Product •8-9 GHz fT •High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz •Low Noise Figure - 1.5 dB @ 1.5 GHz SOT-23 Description The MP4T856 series of moderate power NPN transistors prov ides low noise at 5-10 v olts operating v oltage. These transistors are designed to optimize gain at moderate collector currents (20 - 60 mA). SOT-143 They are useful as moderate power (+23-24 dBm) low noise amplifiers at 0.5-2 GHz or as low noise VCO transistors from 100 MHz to 5.0 GHz. These inexpensiv e transistors are av ailable in the SOT23 (MP4T85633), the SOT-143 (MP4T85639), and the Micro-X (MP4T85635) packages. They are also av ailable as chips (MP4T85600) for hybrid circuits. The plastic packages SOT-23 and SOT-143 are normally supplied on tape and reel. Chip Absolute Maximum Ratings1 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Chip or Ceramic Package Plastic Package Storage Temperature Chip or Ceramic Package Plastic Package Power Dissipation (die) Absolute Maximum 20 V 12 V 3.0 V 100 mA +200°C +150°C -65°C to +200°C -65°C to +200°C 1200 mW1 1. See power derating curves. Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 1 Moderate Power High fT NPN Silicon Transistor MP4T856 Series MP4T856 Series Electrical Specifications @ +25°C Symbol fT |S21E|2 NF GA P1dB RTH(J-A) RTH(J-C) Units MP4T85600 Chips MP4T85633 SOT-23 MP4T85635 Micro-X MP4T85639 SOT-143 VCE=8V, IC=30mA GHz 7.0 typ. 7.0 typ. 7.0 typ. 7.0 typ. VCE=8V, IC=20MA, f=1GHz VCE=8V, IC=10mA, f=1GHz VCE=8V, IC=10mA, f=1GHz VCE=8V, IC=40mA, f=1GHz, f=2GHz Junction/Ambient (Free Air) Junction/Case dB dB dB dBm 13.5 min. 1.6 max. 16 typ. 16 typ. 10 typ. 60 max.1 12 min. 1.7 max. 15 typ. 13 typ. 10 typ. 600 max. 200 typ. 13.0 min. 1.6 max. 16 typ. 16 typ. 10 typ. 550 max 200 typ. 12 min. 1.7 max. 15 typ. 13 typ. 10 typ. 600 max. 200 typ. Parameters Test Conditions Gain Bandwidth Product Insertion Power Gain Noise Figure Associated Gain Output Power at 1 dB Compression Thermal Resistance Thermal Resistance °C/W °C/W 1 See power derating curves. Electrical Specifications @ +25°C Symbol I CBO I EBO hFE COB Parameters Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector-Base Junction Capacitance Test Conditions VCB = 8V, IE = 0 VEB = 1V, IC = 0 VCE = 8V, IC = 20mA VCB = 8 V, f = 1 MHz Units µA µA pF Min. 20 - Typ. 100 0.62 Max. 1.0 1 250 0.75 MP4T85635 Typical Scattering Parameters in the MIcro-X Package VCE = 8 Volts, IC = 10 mA Frequency (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 4000 5000 6000 S11E Mag. 0.581 0.516 0.496 0.487 0.483 0.481 0.479 0.478 0.478 0.476 0.475 0.475 0.474 0.473 0.472 0.472 0.476 0.484 S21E Angle -97.9 -151.1 177.1 153.4 133.2 114.9 97.7 81.2 65.1 49.4 33.9 18.4 3.9 -12.2 -27.4 -103.3 -176.5 104.4 Mag. 16.95 10.72 7.59 5.84 4.74 3.99 3.46 3.06 2.74 2.49 2.29 2.12 1.98 1.86 1.76 1.39 1.17 1.03 S12E Angle 117.1 83.5 60.3 40.7 22.7 5.6 -11.0 -27.3 -43.4 -59.3 -75.0 -90.6 -106.1 -121.5 -136.7 148.1 74.8 3.1 Mag. 0.033 0.045 0.054 0.064 0.074 0.085 0.097 0.109 0.121 0.133 0.145 0.158 0.170 0.183 0.197 0.267 0.340 0.415 S22E Angle 44.9 27.8 17.9 8.6 1.0 11.4 22.2 33.6 45.4 57.3 69.5 82.0 94.7 107.3 120.1 174.4 107.1 38.2 Mag 0.685 0.481 0.396 0.355 0.334 0.324 0.317 0.311 0.311 0.315 0.314 0.311 0.317 0.324 0.323 0.336 0.367 0.375 Angle -46.4 -65.0 -79.0 -91.6 -105.0 -118.0 -132.0 -147.0 -162.0 -177.0 168.4 152.6 136.0 121.0 107.0 28.5 -49.0 -126.0 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 2 Moderate Power High fT NPN Silicon Transistor MP4T856 Series MP4T85635 Typical Scattering Parameters in the MIcro-X Package VCE = 8 Volts, IC = 20 mA Frequency S11E (MHz) Mag. Angle 200 0.469 -124.6 400 0.456 -170.4 600 0.453 163.3 800 0.452 142.9 1000 0.451 124.9 1200 0.451 108.1 1400 0.449 91.9 1600 0.448 76.2 1800 0.450 60.8 2000 0.448 45.5 2200 0.448 30.6 2400 0.448 15.7 2600 0.446 1.5 2800 0.445 -14.0 3000 0.442 -29.1 4000 0.443 -104.0 5000 0.442 -177.9 6000 0.456 105.2 Mag. 21.56 12.34 8.50 6.48 5.23 4.40 3.80 3.35 3.01 2.73 2.51 2.32 2.17 2.04 1.92 1.52 1.29 1.13 S21E Angle 107.4 77.1 56.0 37.7 20.5 3.9 -12.3 -28.2 -44.0 -59.6 -75.2 -90.6 -105.9 -121.1 -136.3 148.8 75.3 3.2 Mag. 0.026 0.037 0.050 0.062 0.075 0.089 0.102 0.116 0.130 0.143 0.157 0.170 0.184 0.198 0.212 0.281 0.351 0.419 S12E Angle 47.0 36.6 28.2 18.5 7.5 4.1 16.2 28.8 41.5 54.3 67.3 80.4 93.6 106.9 120.1 172.7 104.5 35.6 Mag 0.546 0.363 0.298 0.269 0.254 0.247 0.244 0.242 0.243 0.246 0.246 0.246 0.251 0.258 0.260 0.275 0.307 0.318 S22E Angle -53.6 -69.8 -81.1 -92.9 -105.6 -119.2 -133.0 -147.8 -163.0 -177.5 167.9 152.4 136.5 121.9 107.2 29.1 -48.5 -126.1 Mag. 0.021 0.034 0.048 0.062 0.076 0.090 0.105 0.119 0.133 0.147 0.161 0.174 0.188 0.202 0.216 0.283 0.351 0.414 S12E Angle 51.7 43.8 34.7 23.9 11.9 0.5 13.4 26.4 39.7 52.9 66.2 79.6 93.1 106.5 120.0 172.3 104.0 35.3 Mag 0.443 0.296 0.250 0.230 0.222 0.219 0.218 0.218 0.221 0.225 0.226 0.227 0.233 0.242 0.244 0.264 0.297 0.307 S22E Angle -56.7 -68.7 -79.0 -90.5 -103.3 -117.1 -131.1 -146.0 -161.3 -175.9 169.6 154.1 138.3 123.8 109.4 32.3 -43.8 -119.7 MP4T85635 Typical Scattering Parameters in the MIcro-X Package VCE = 8 Volts, IC = 40 mA Frequency S11E (MHz) Mag. Angle 200 0.426 -147.7 400 0.438 175.6 600 0.441 153.3 800 0.442 134.9 1000 0.442 118.0 1200 0.442 101.9 1400 0.441 86.1 1600 0.441 70.6 1800 0.443 55.3 2000 0.443 40.2 2200 0.443 25.3 2400 0.443 10.6 2600 0.442 -4.7 2800 0.441 -19.2 3000 0.440 -34.3 4000 0.446 -109.5 5000 0.447 174.0 6000 0.466 100.3 Mag. 23.88 12.94 8.80 6.67 5.38 4.51 3.90 3.43 3.08 2.79 2.56 2.37 2.21 2.07 1.95 1.54 1.30 1.13 S21E Angle 99.9 72.7 52.9 35.3 18.5 2.2 -13.8 -29.6 -45.3 -60.8 -76.3 -91.6 -106.8 -122.0 -137.2 148.1 74.7 2.9 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Moderate Power High fT NPN Silicon Transistor MP4T856 Series MP4T85639 Typical Scattering Parameters in the SOT-143 Package VCE = 3 Volts, IC = 20 mA Frequency S11E (MHz) Mag. Angle 200 0.471 -118.4 400 0.457 -152.6 600 0.458 -168.7 800 0.461 -178.9 1000 0.466 173.0 1200 0.471 166.0 1400 0.476 160.2 1600 0.480 155.0 1800 0.485 150.1 2000 0.491 144.8 2200 0.488 141.5 2400 0.496 137.1 2600 0.499 132.9 2800 0.510 129.4 3000 0.513 125.8 Mag. 19.14 10.70 7.33 5.57 4.48 3.76 3.24 2.86 2.56 2.32 2.12 1.97 1.83 1.71 1.62 S21E Angle 115.5 97.7 88.2 81.4 75.7 70.3 65.5 61.1 56.7 52.3 48.8 44.7 40.8 37.3 34.0 Mag. 0.034 0.048 0.064 0.079 0.095 0.110 0.128 0.144 0.158 0.172 0.190 0.207 0.220 0.233 0.249 S12E Angle 56.7 57.2 60.7 61.1 62.3 60.7 60.1 59.0 56.9 56.3 55.7 53.2 50.6 48.8 46.8 Mag 0.492 0.297 0.219 0.183 0.168 0.158 0.156 0.154 0.157 0.157 0.167 0.172 0.180 0.183 0.184 S22E Angle -54.8 -66.2 -71.4 -75.3 -80.1 -85.0 -89.3 -94.0 -98.3 -101.4 -104.8 -108.7 -111.6 -115.9 -118.5 Mag. 0.028 0.043 0.062 0.079 0.096 0.112 0.128 0.148 0.163 0.177 0.195 0.210 0.225 0.238 0.255 S12E Angle 59.4 65.0 67.1 66.6 66.4 64.5 63.7 61.9 59.3 57.6 57.0 54.7 51.5 49.9 47.5 Mag 0.376 0.221 0.166 0.141 0.130 0.127 0.127 0.128 0.134 0.138 0.151 0.151 0.160 0.164 0.170 S22E Angle -60.8 -69.4 -74.5 -78.2 -84.2 -89.1 -93.9 -98.7 -103.4 -106.8 -109.4 -113.5 -115.6 -119.3 -123.7 MP4T85639 Typical Scattering Parameters in the SOT-143 Package VCE = 3 Volts, IC = 40 mA Frequency S11E (MHz) Mag. Angle 200 0.447 -140.1 400 0.460 -165.5 600 0.467 -177.5 800 0.473 174.3 1000 0.478 167.7 1200 0.484 161.8 1400 0.490 156.6 1600 0.492 151.9 1800 0.499 147.4 2000 0.504 142.4 2200 0.501 139.3 2400 0.509 135.3 2600 0.511 131.0 2800 0.521 127.3 3000 0.527 124.2 Mag. 20.11 10.77 7.30 5.53 4.44 3.72 3.21 2.83 2.53 2.30 2.10 1.94 1.81 1.70 1.60 S21E Angle 108.5 93.6 85.3 79.2 73.9 68.8 64.1 59.8 55.6 51.3 47.9 43.8 39.9 36.4 33.1 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 4 Moderate Power High fT NPN Silicon Transistor MP4T856 Series MP4T85639 Typical Scattering Parameters in the SOT-143 Pacakge VCE = 8 Volts, IC = 20 mA Frequency S11E (MHz) Mag. Angle 200 0.500 -98.3 400 0.423 -137.3 600 0.406 -157.4 800 0.404 -170.3 1000 0.406 -179.7 1200 0.409 172.1 1400 0.416 165.6 1600 0.418 159.7 1800 0.425 154.5 2000 0.431 149.0 2200 0.431 145.3 2400 0.439 140.9 2600 0.446 136.5 2800 0.457 132.4 3000 0.463 129.3 Mag. 20.35 11.71 8.09 6.17 4.97 4.17 3.59 3.16 2.83 2.57 2.33 2.16 2.01 1.88 1.77 S21E Angle 119.5 100.4 90.4 83.2 77.3 71.7 66.8 62.2 57.9 53.2 49.7 45.6 41.7 38.0 34.5 Mag. 0.030 0.042 0.055 0.068 0.081 0.096 0.109 0.123 0.134 0.144 0.163 0.175 0.188 0.199 0.212 S12E Angle 59.3 57.3 61.6 62.8 62.4 61.1 61.5 60.5 58.3 58.4 57.8 56.8 54.2 52.3 50.7 Mag 0.580 0.394 0.322 0.290 0.272 0.264 0.257 0.254 0.255 0.254 0.264 0.265 0.268 0.273 0.271 S22E Angle -38.8 -43.0 -42.7 -43.0 -45.2 -47.8 -50.9 -54.1 -57.9 -61.7 -65.6 -69.2 -72.9 -76.4 -80.0 Mag. 0.026 0.038 0.052 0.66 0.079 0.092 0.109 0.123 0.136 0.146 0.163 0.177 0.188 0.199 0.211 S12E Angle 58.5 61.8 64.9 64.4 67.4 65.2 64.3 63.1 60.6 60.1 59.1 57.4 54.8 52.4 51.4 Mag 0.492 0.350 0.303 0.282 0.268 0.265 0.263 0.260 0.260 0.260 0.272 0.272 0.276 0.282 0.279 S22E Angle -38.2 -37.6 -36.0 -36.7 -39.3 -42.4 -45.7 -49.7 -54.2 -58.0 -62.0 -66.1 -69.7 -73.7 -77.3 MP4T85639 Typical Scattering Parameters in the SOT-143 Package VCE = 8 Volts, IC = 40 mA Frequency S11E (MHz) Mag. Angle 200 0.455 -116.2 400 0.414 -150.6 600 0.410 -166.9 800 0.412 -177.6 1000 0.417 174.6 1200 0.422 167.4 1400 0.429 161.8 1600 0.432 156.4 1800 0.439 151.7 2000 0.447 146.4 2200 0.444 143.0 2400 0.455 138.8 2600 0.460 134.5 2800 0.472 131.0 3000 0.479 127.7 Mag. 21.21 11.59 7.90 5.98 4.82 4.04 3.48 3.06 2.74 2.48 2.25 2.09 1.94 1.82 1.70 S21E Angle 112.3 95.8 87.0 80.4 74.9 69.6 64.8 60.4 56.1 51.5 48.0 43.8 39.8 36.1 32.7 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 5 Moderate Power High fT NPN Silicon Transistor MP4T856 Series Typical Performance Curves MP4T856 SERIES POWER DISSIPATION MP4T856 SERIES POWER DISSIPATION 300 M P 4 T 8 5 6 3 3 , 39 (O D S - 1 1 3 9 , 23 M icro-X ) INFINITE HEAT SINK 1200 MP4T86500 (CHIP) ON HEAT SINK POWER DISSIPATION (mW) POWER DISSIPATION (mW) 1400 1000 800 600 MP4T85635 (MICRO-X) INFINITE HEAT SINK 400 250 200 150 100 50 200 MP4T85635 (MICRO-X) FREE AIR 0 0 25 50 M P 4 T 8 5 6 3 3 , 3 9 ( O D S - 1 1 3 9 , 3 5 M icro-X ) F R E E A IR 0 75 100 125 150 0 175 MP4T85635 NOMINAL GAIN vs FREQUENCY at VCE - 8 VOLTS and IC = 20mA 75 100 125 150 MP4T85635 NOMINAL GAIN vs FREQUENCY at VCE - 8 VOLTS and IC = 40mA 30 30 25 20 15 GU (MAX) 25 GTU (MAX) GAIN (dB) GAIN (dB) 50 A M B IE N T T E M P E R A T U R E (C ) AMBIENT TEMPERATURE (C) MAG 10 20 15 GA (MAX) 10 |S21E |2 5 |S21E |2 5 0 0 100 1000 10000 100 1000 FREQUENCY (MHz) 10000 FREQUENCY (MHz) MP4T85600 NOMINAL GAIN vs COLLECTOR CURRENT at F = 1GHz and VCE = 8 VOLTS MP4T85635 NOMINAL GAIN vs COLLECTOR CURRENT at F = 1GHz and VCE = 8 VOLTS 25 18 17 MAG 14 13 20 GAIN (dB) 16 15 GAIN (dB) 25 GTU (MAX) |S21E |2 12 11 10 GU (MAX) 15 10 |S21E |2 5 9 8 0 1 10 COLLECTOR CURRENT (mA) 100 1 10 100 COLLECTOR CURRENT (mA) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 6 Moderate Power High fT NPN Silicon Transistor MP4T856 Series Typical Performance Curves (Cont’d) MP4T85600 CAPACITANCE vs COLLECTOR-BASE VOLTAGE 140 120 DC CURRENT GAIN 1 0.9 0.8 0.7 Cob (pf) 0.6 0.5 0.4 0.3 0.2 NOMINAL DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 8 VOLTS 100 80 60 40 20 0.1 0 0 1 10 0 100 20 30 40 50 60 70 80 COLLECTOR CURRENT (mA) COLLECTOR-BASE VOLTAGE (Volts) NOMINAL POWER OUTPUT at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at F=1 and 2 GHz and VCE = 8 VOLTS (MP4T85635) NOMINAL NOISE FIGURE and ASSOCIATED GAIN at F = 1 GHz COLLECTOR CURRENT at VCE = 8 VOLTS (MP4T85635) 25 18 ASSOCIATED GAIN 16 20 POUT - 1dB (dBm) NOISE FIGURE (dB) ASSOCIATED GAIN (dB) 10 15 10 NOISE FIGURE 5 14 f = 1 GHz 12 10 8 6 4 2 0 1 10 100 COLLECTOR CURRENT (mA) 0 1 10 100 COLLECTOR CURRENT (mA) Case Styles Chip (MP4T85600) A Base MP4T85600 DIM. INCHES (Nominal) A 0.013 B 0.013 C 0.0012 D 0.0045 MM (Nominal) 0.35 0.35 0.03 0.11 B D Thickness Emitter C 2 PLCS Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 7 Moderate Power High fT NPN Silicon Transistor MP4T856 Series Case Styles (Cont’d) MP4T85633 SOT-23 (MP4T85633) F N A D Collector B M G K DIM. A B C D E F G H J K L INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 DIM. M N GRADIENT 10°max. 1 2°. . . 30° MILLIMETERS MIN. MAX. 1.12 0.10 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60 L H E C Emitter J Base NOTE: 1. Applicable on all sides Micro-X (MP4T85635) Case Style 1139 Emitter F 4 PLCS. MP4T85635 E H Collector DIM. A B C D E F G H Base B Emitter INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45° MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.046 0.56 3.81 0.08 0.15 45° A C D G Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 8 Moderate Power High fT NPN Silicon Transistor MP4T856 Series Case Styles (Cont’d) SOT-143 (MP4T85639) MP4T85639 Base Emitter G P A J B N H L M E D F DIM. A B C D E F G H J K L M INCHES MIN. MAX. 0.044 0.044 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.075 typical 0.103 0.024 DIM. N P GRADIENT 10°max. 1 2°. . . 30° MILLIMETERS MIN. MAX. 1.10 1.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.90 typical 2.6 0.6 C K Collector Emitter NOTE: 1. Applicable on all sides Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 9