NAINA 100NTD

100
100NTD
Naina Semiconductor
emiconductor Ltd.
Thyristor – Diode Module
Features
•
•
•
•
•
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
Available in both M1 & M2 package
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter
Maximum average forward current @ TJ =
0
85 C
Symbol
Values
Units
IF(AV)
100
A
Maximum average RMS forward current
Maximum non-repetitive surge current @ t
= 10ms
IF(RMS)
220
A
IFSM
2000
A
2
20
kA s
2
Maximum I t for fusing @ t = 10ms
It
2
M1 & M2 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Operating junction temperature range
Thermal resistance, junction to case
Symbol
Values
TJ
-65
65 to +125
+1
Rth(JC)
1.1
Units
0
C
0
C/W
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Maximum average on-state current
Maximum repetitive peak reverse voltage range
Forward voltage drop
Gate current required to trigger
Gate voltage required to trigger
Holding current range
Maximum latching current
Critical rate of rise of off-state voltage
RMS isolated voltage
1
Symbol
Values
Units
IT(max)
VRRM
VFM
IGT
VGT
IH
IL
dv/dt
VISO
100
200 to 1600
1.55
100
2
5 to 100
400
300
2500
A
V
V
A
V
mA
mA
V/µs
V
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450
4205450 • Fax: 0120-4273653
0120
[email protected] • www.nainasemi.com
Naina Semiconductor
emiconductor Ltd.
100
100NTD
ALL DIMENSIONS IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450
4205450 • Fax: 0120-4273653
0120
[email protected] • www.nainasemi.com