90 MDS Naina Semiconductor Ltd. Three – Phase Bridge Rectifier Features Easy connections Excellent power volume ratio Insulated type Voltage Ratings (TJ = 250C unless otherwise noted) Type number Voltage code 90 MDS VRRM, Max. repetitive peak reverse voltage (V) VRSM, Max. nonrepetitive peak reverse voltage (V) 80 800 900 100 120 140 160 1000 1200 1400 1600 1100 1300 1500 1700 IRRM max @ TJ max (mA) MDS 10 Thermal and Mechanical Specifications (TA = 250C unless otherwise noted) Parameters Maximum operating junction temperature range Maximum storage temperature range Symbol Values TJ TStg - 40 to + 150 - 40 to + 150 DC operation per module Maximum thermal resistance, junction to case DC operation per junction 120 Rect conduction angle per module Per module, Mounting surface smooth, flat and greased Mounting torque ±10% to heatsink to terminal Approximate weight 1 0 C C 0 0.21 Rth(JC) 120 Rect conduction angle per junction Maximum thermal resistance, case to heatsink Units 1.26 0.25 0 C/W 1.47 0 Rth(CS) 0.03 C/W T 4 to 6 3 to 4 Nm 176 g D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com 90 MDS Naina Semiconductor Ltd. Electrical Specifications (TJ = 250C unless otherwise noted) Parameters Conditions Maximum DC output current 120 Rect conduction angle, TC = 85 C Maximum peak one-cycle forward, non-repetitive surge current 2 Maximum I t for fusing 0 t = 10ms t = 8.3ms No voltage reapplied t = 8.3ms t = 10ms 100% VRRM reapplied T = 8.3ms No voltage reapplied T = 10ms T = 8.3ms T = 10ms 2 0 T = 0.1 to 10ms, no voltage reapplied Low level value of threshold voltage Values Units I0 90 A IFSM TJ = TJ max. 100% VRRM reapplied Maximum J √t for fusing Symbol 770 810 650 680 A 3000 2 It 2700 2100 2 As 1900 2 2 J √t 30000 A √s [ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max VF(TO)1 0.89 V High level value of threshold voltage [ I > π > IF(AV) ], @ TJ max VF(TO)2 1.05 V Low level value of forward slope resistance [ 16.7% * π * IF(AV) < I < π * IF(AV) ], @ TJ max r1 5.11 mΩ High level value of forward slope resistance [ I > π * IF(AV) ], @ TJ max r2 4.64 mΩ Maximum forward voltage drop Ipk = 100A, tP = 400 µs single junction VFM 1.6 V RMS isolation voltage f = 50Hz, t = 1ms, all terminals shorted VISO 4000 V Diode Configuration 2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com Naina Semiconductor Ltd. 90 MDS ALL DIMENSIONS IN MM 3 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 [email protected] • www.nainasemi.com