Pb Free Product 2N7002K http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=4.5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2500V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Direct Logic-Level Interface: TTL/CMOS Marking and pin Assignment ●Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ●Battery Operated Systems ●Solid-State Relays SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 7002K 2N7002K SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ID Drain Current-Continuous@ Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit 60 V ±20 V 0.3 A 0.8 A 0.35 W -55 To 150 ℃ 350 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Wuxi NCE Power Semiconductor Co., Ltd BVDSS Page 1 VGS=0V ID=250μA 60 V v1.0 Pb Free Product 2N7002K http://www.ncepower.com Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±10 uA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.5 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=0.2A 1.2 3 Ω VGS=10V, ID=0.5A 1.1 2 Ω On Characteristics (Note 3) Forward Transconductance gFS VDS=10V,ID=0.2A 1 0.1 S Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz 21 50 PF 11 25 PF 4.2 5 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr td(off) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg 10 nS VDD=30V,ID=0.2A 50 nS VGS=10V,RGEN=10Ω 17 nS 10 nS VDS=10V,ID=0.3A, VGS=4.5V 1.7 3 nC 1.3 V 0.2 A Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=0.2A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 Pb Free Product 2N7002K http://www.ncepower.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ID- Drain Current (A) ID- Drain Current (A) Figure 1:Switching Test Circuit Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 4 Transfer Characteristics Rdson On-Resistance(Ω) Rdson On-Resistance(Ω) Figure 3 Output CHARACTERISTICS Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 5 Drain-Source On-Resistance Wuxi NCE Power Semiconductor Co., Ltd Page 3 Figure 6 Rdson vs Vgs v1.0 Pb Free Product 2N7002K Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (mA) http://www.ncepower.com Vsd Source-Drain Voltage (V) Qg Gate Charge (nC) Figure 8 Source-DrainDiode Forward ID- Drain Current (A) Normalized On-Resistance Figure 7 Gate Charge TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 10 Safe Operation Area C Capacitance (pF) Figure 9 Drain-Source On-Resistance Vds Drain-Source Voltage (V) Figure 11 Capacitance vs Vds Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 Pb Free Product 2N7002K r(t),Normalized Effective Transient Thermal Impedance http://www.ncepower.com Square Wave Pluse Duration(sec) Figure 12 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 Pb Free Product 2N7002K http://www.ncepower.com SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 Pb Free Product http://www.ncepower.com 2N7002K ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep, 2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.0