NEC 2SD596A

DATA SHEET
SILICON TRANSISTOR
2SD596A
AUDIO FREQUENCY POWER AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
PACKAGE DRAWING
(Unit: mm)
• Complementary to NEC 2SB624 PNP Transistor.
• High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
30
V
VCEO
25
V
VEBO
5.0
V
IC
700
mA
PT
200
mW
Tj
150
°C
Tstg
−55 to +150 °C
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cut-off Current
ICBO
100
nA
VCB = 30 V, IE = 0 A
Emitter Cut-off Current
IEBO
100
nA
VEB = 5.0 V, IC = 0 A
DC Current Gain
hFE1
110
hFE2
50
Collector Saturation Voltage
200
VCE(sat)
VCE = 1.0 V, IC = 100 mA
Note
VCE = 1.0 V, IC = 700 mA
Note
Note
0.22
0.6
V
IC = 700 mA, IB = 70 mA
640
700
mV
VCE = 6.0 V, IC = 10 mA
VCE = 6.0 V, IE = −10 mA
Base to Emitter Voltage
VBE
Gain Bandwidth Product
fT
170
MHz
Cob
12
pF
Output Capacitance
600
400
Note
VCB = 6.0 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%
hFE1 CLASSIFICATION
Marking
DV1
DV2
DV3
DV4
DV5
hFE
110 to 180
135 to 220
170 to 270
200 to 320
250 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17880EJ1V0DS00 (1st edition)
Date Published December 2005 NS CP(K)
Printed in Japan
c
2005
2SD596A
TYPICAL CHARACTERISTICS (TA = 25°C)
2
Data Sheet D17880EJ1V0DS
2SD596A
Data Sheet D17880EJ1V0DS
3
2SD596A
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M8E 02. 11-1