DATA SHEET PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). Creepage distance and clearance of leads are over 8 millimeters. The PS2581L2 is lead bending type (Gull-wing) for surface mounting. FEATURES • Long creepage and clearance distance (8 mm) • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • High current transfer ratio (CTR = 200 % TYP.) • UL approved: File No. E72422 (S) • CSA approved: No. 101391 • BSI approved: No. 8243/8244 • NEMKO approved: No. P97103006 • DEMKO approved: No. 307269 • SEMKO approved: No. 9741154/01 • FIMKO approved: No. 018277 • VDE0884 approved ORDERING INFORMATION Part Number Package Application Part Number Safety Standard Approval PS2581L1 4-pin DIP UL, CSA, BSI, NEMKO, DEMKO, PS2581L1 PS2581L2 4-pin DIP (lead bending surface mount) SEMKO, FIMKO, VDE approved PS2581L2 PS2581L2-E3, E4 4-pin DIP taping *1 *1 As applying to Safety Standard, following part number should be used. The information in this document is subject to change without notice. Document No. P12809EJ2V0DS00 (2nd edition) Date Published June 1998 NS CP(K) Printed in Japan The mark • shows major revised points. © 1997 PS2581L1,PS2581L2 PACKAGE DIMENSIONS (in millimeters) PS2581L1 TOP VIEW 4.6±0.35 1.0±0.2 3 4 6.5+0.5 –0.1 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.16 3.5±0.3 0.35 3.2±0.4 4.15±0.4 7.62 2.54 0.50±0.1 0.25 M 1.25±0.15 0 to 15˚ PS2581L2 4.6±0.35 TOP VIEW 1.0±0.2 3 4 6.5+0.5 –0.1 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.16 3.5±0.3 0.25±0.2 7.62 1.25±0.15 0.25 M 0.9±0.25 2.54 PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 8 mm Outer Creepage Distance 8 mm Inner Creepage Distance 4 mm Isolation Thickness 2 0.4 mm 12.0 MAX. PS2581L1,PS2581L2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 80 mA Reverse Voltage VR 6 V ∆PD/°C 1.5 mW/°C PD 150 mW IFP 1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA ∆PC/°C 1.5 mW/°C PC 150 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 3 PS2581L1,PS2581L2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Diode Parameter Symbol Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz ICEO VCE = 80 V, IF = 0 mA CTR IF = 5 mA, VCE = 5 V VCE(sat) IF = 10 mA, IC = 2 mA Transistor Collector to Emitter Dark Current Coupled Current Transfer Ratio (IC/IF) *1 Collector Saturation Voltage Conditions Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *2 tr tf Rise Time Fall Time *2 1.17 1.4 V 5 µA 50 80 200 pF 100 nA 400 % 0.3 V Ω 11 10 3 µs RL = 100 Ω 5 D : 100 to 300 (%) H : 80 to 160 (%) W : 130 to 260 (%) N : 80 to 400 (%) *2 Test circuit for switching time VCC PW = 100 µ s Duty Cycle = 1/10 4 Unit VCC = 10 V, IC = 2 mA, M : 80 to 240 (%) 50 Ω MAX. pF L : 200 to 400 (%) IF TYP. 0.5 *1 CTR rank Pulse Input MIN. VOUT RL = 100 Ω PS2581L1,PS2581L2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 50 0 25 50 75 100 125 50 25 50 75 100 125 150 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 70 50 TA = +100 ˚C +60 ˚C +25 ˚C 60 Collector Current IC (mA) Forward Current IF (mA) 100 0 150 100 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 50 40 50 30 mA 20 mA A m 10 20 IF = 5 mA 10 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 50 mA 20 mA 10 mA 10 000 VCE = 80 V 40 V 24 V 10 V 5V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 150 100 10 1 – 50 –25 0 25 50 Ambient Temperature TA (˚C) 75 100 10 5 mA 5 2 mA IF = 1 mA 1 0.5 0.1 0 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) 5 PS2581L1,PS2581L2 ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 1.0,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.8,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,,,,, 0.6 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 450 1.2 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0 –50 –25 0 25 50 75 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 400 350 300 250 200 150 100 50 0 100 0.05 0.1 Ambient Temperature TA (˚C) 1 5 10 50 Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 50 1 000 IC = 2 mA, VCC = 10 V, CTR = 290 % tf IF = 5 mA, VCC = 5 V, CTR = 290 % tf tr Switching Time t ( µ s) Switching Time t ( µ s) 0.5 10 td ts 1 ts 100 10 tr 0.1 10 50 100 500 1 k 50 k 100 k LONG TERM CTR DEGRADATION –5 –10 100 Ω –15 RL = 1 kΩ 300 Ω 2 5 10 20 50 100 200 500 Frequency f (kHz) Remark The graphs indicate nominal characteristics. 1.2 CTR Degradation (Relative Value) Normalized Gain GV 5 k 10 k FREQUENCY RESPONSE –20 6 500 1 k Load Resistance RL (Ω) IF = 5 mA, VCE = 5 V 1 td Load Resistance RL (Ω) 0 0.5 1 100 5 k 10 k TYP. 1.0 0.8 IF = 5 mA TA = 25 ˚C 0.6 IF = 5 mA TA = 60 ˚C 0.4 0.2 0 102 103 Time (Hr) 104 105 PS2581L1,PS2581L2 TAPING SPECIFICATIONS (in millimeters) 2.05±0.1 4.3±0.2 6.45±0.1 12.2±0.1 11.5±0.1 1.55±0.1 24.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.38 12.0±0.1 Tape Direction PS2581L2-E3 PS2581L2-E4 Outline and Dimensions (Reel) φ 21.0±1.6 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ13.0±1.0 24.4+2.0 –0.0 Packing: 1 000 pcs/reel 7 PS2581L1,PS2581L2 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 8 PS2581L1,PS2581L2 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Unit IV III Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage. Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC Speck 55/100/21 UIORM Upr 890 1 068 Vpeak Vpeak Test voltage (partial discharge test procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 424 Vpeak Highest permissible overvoltage UTR 8 000 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance > 8.0 mm Creepage distance > 8.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg −55 to +150 °C Operating temperature range TA −55 to +100 °C Ris MIN. Ris MIN. 10 11 10 Ω Ω Tsi Isi Psi 175 400 700 °C mA mW Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 12 9 Ω 9 PS2581L1,PS2581L2 [MEMO] 10 PS2581L1,PS2581L2 [MEMO] 11 PS2581L1,PS2581L2 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5