25D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Standard Recovery Diodes (Stud Version), 25A FEATURES Glass passivated chips High surge current capability Stud cathode and stud anode version Wide current range Voltage up to 1600V VRRM RoHS compliant TYPICAL APPLICATIONS Battery charges Converters Power supplies Machine tool controls DO-203AA(DO-4) PRODUCT SUMMARY IF(AV) 25A MAJOR RATINGS AND CHARACTERISTICS PARAMETER 25 A 120 ºC 39 A 356 373 634 578 A 60 HZ 50 HZ 60 HZ Range 200 to 1600 V -65 to 175 ºC TC I F(AV) I F(RMS) 50 HZ I FSM I 2t V RRM UNIT VALUES TEST CONDITIONS TJ A 2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 25D( R ) VOLTAGE CODE VRRM,MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM,MAXIMUM NON-REPETITIVE PEAK VOLTAGE V VR(BR),MIMIMUM AVALANCHE VOLTAGE V(1) 02 200 275 - 04 400 500 500 06 600 725 750 08 800 950 950 10 1000 1200 1150 12 1200 1400 1350 16 1600 1800 1750 Note (1) Avalanche version only available from VRRM 400V to 1600V Page 1 of 5 VRRM,MAXIMUM AT TJ=175°C mA 12 25D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION SYMBOL PARAMETER Maximum average forward current at case temperature I F(AV) Maximum RMS forward current I F(RMS) Maximum on-repetitive peak reverse power P R(1) TEST CONDITIONS I FSM non-reptitive surge current 25 120 39 180 ° conduction, half sine wave 10μs square pulse, T J = T J maximum t = 10 ms Maximum peak, one-cycle forward, VALUES t = 8.3 ms t = 10 ms 10 No voltage reapplied 356 300 t = 8.3 ms 100%V RRM reapplied t = 10 ms t = 8.3 ms No voltage reapplied t = 10 ms 100%V RRM reapplied 373 Sinusoidal half wave, initial T J = T J maximum UNIT A ºC A K/W A 314 634 578 450 A 2s Maximum l²t for fusing I 2t Maximum l²√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 6337 A 2√s Maximum forward voltage drop V FM l pk = 78 A, T J = 25˚C, t p = 400µs rectangular wave 1.30 V t = 8.3 ms 410 Note (1) Avalanche only for avalanche version, all other parameters the same as 25D THERMAL AND MECHANICAL SPECIFCATIONS SYMBOL PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistace, junction to case TEST CONDITIONS VALUES UNITS TJ - 65 to175 ºC T stg - 65 to 200 R thJC 1.5 DC operation K/W Maximum thermal resistance R thCS case to heatsink Mounting surface, smooth, flat and greased 0.5 1.5 +0 -10% (13) Not lubricated threads Allowable mounting torque +0 1.2 -10% (10) 6 0.21 Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet N·m (lbf · in) N·m (lbf · in) g oz. DO-203AA (DO-4) ΔRthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180˚ 0.28 0.24 120˚ 90˚ 0.39 0.50 0.73 0.41 0.54 0.75 1.20 1.21 60˚ 30˚ Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Page 2 of 5 TEST CONDUCTIONS T J = T J maximum UNITS K/W 25D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Current Ratings Characteristics 25D（R） Series R thJC (DC)=1.5K/W 170 160 150 Conduction Angle 140 130 120 90° 60° 110 120° 30° 180° 100 5 0 10 15 20 25 180 Maximum Allowable Case Temperature(˚C) 180 25D（R） Series R thJC (DC)=1.5K/W 170 160 150 Conduction Period 140 130 120 90° 120° 60° 110 180° 30° DC 100 30 0 5 Average Forward Current (A) 25 15 20 10 30 35 40 Average Forward Current (A) Fig. 3 Forward Power Loss Characteristics 2K 180° 3K A 30 = 90° 60° 4K 1K /W /W -D 25 /W /W hS 120° Rt 30° el ta 20 6K RMS Limit 8K 15 /W /W 12K Conduction Angle R Maximum Average Forward Power Loss (W) 35 10 /W 2 0 K /W 25D（R） Series 5 40K/ W TJ = 175 ˚ C 0 0 10 5 15 20 25 30 Average Forward Current (A) 50 25 100 75 125 150 175 Maximum Allowable Ambient Temperature (°C) Fig. 4 Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature(˚C) Fig.1 Current Ratings Characteristics 25 DC 180° Rt 120° 90° 20 6K RMS Limit hS A= /W 60° 8K 30° 15 10K 4K /W -D elt aR /W /W 1 5 K /W 10 Conduction Period 2 0 K /W 3 0 K /W 5 25D（R） Series T J = 175 °C 0 0 5 10 15 20 Average Forward Current (A) 25 30 25 50 75 Maximum Allowable Ambient Temperature (°C) 100 45 RoHS RoHS 25D(R)Series SEMICONDUCTOR Nell High Power Products 350 Fig.6 Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 5 Maximum Non-Repetitive Surge Current At Any Rated Load Condition And With At Rated VRRM Applied Following Surge. Initial TJ = 175°C 300 @60 Hz 0.0083 s @50 Hz 0.0100 s 250 200 150 100 25D（R） Series 50 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 350 Initial TJ = 175°C No Voltage Reapplied 300 Reted VRRM Reapplied 250 200 150 100 50 25D（R） Series 0 0.01 100 10 1 400 Number Of Equal Amplitude Half Cycle current Pulses(N) Transient Thermal Impedance ZthJC (K/W) Fig.8 Thermal Impedance ZthJC Characteristics Instantaneous Forward Current (A) 1000 100 T J = 25 °C T J = 175 °C 10 25D（R） Series 0 0.5 1 1.5 2 2.5 3 3.5 4 10 Steady State Value RthJC = 1.5K/W (DC Operation) 1 25D（R） Series 0.1 0.001 Instantaneous Forward Voltage (V) 0.01 0.1 1 Square Wave Pulse Duration (s) ORDERING INFORMATION TABLE Device code 10 Pulse Train Duration (S) Fig. 7 Forward Voltage Drop Characterisics 1 1 0.1 25 D R 12 M 1 2 3 4 5 1 - Current rating: Code = IF(AV) 2 - D = Standard recovery device 3 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 4 - Voltage code × 100 = VRRM (see Voltage Ratings table) 5 - None = Stud base DO-203AA (DO-4) #10-32 UNF-2A M = Stud base DO-230AA (DO-4) M5× 0.8 (not available for avalanche diodes) 10 25D(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 10.6/11.2 (0.41/0.44) 11.6/12.4 (0.45/0.48) Ø8.5/Ø8.9 (Ø0.33/Ø0.35) 3.7/4.3 (0.14/0.16) 10.5/11.5 (0.41/0.45) 9.6/10.1 (0.37/0.39) 20.0/21.0 (0.78/0.82) 5.0/5.6 (0.19/0.22) Ø1.5/Ø1.7 Ø0.05/Ø0.06 10/32” UNF-2A For metric devices: M5× 0.8 0.5/1.0 (0.02/0.04)