RoHS 41T Series RoHS SEMICONDUCTOR TRIACs, 40A Sunbberless FEATURES High current triac Low thermal resistance with clip bonding A2 Low thermal resistance insulation ceramic for insulated TO-3P package High commutation capability 41T series are UL certified (File ref: E320098) Packages are RoHS compliant A1 A2 G A1 A2 G APPLICATIONS TO-3P (non-Insulated) (41TxxB) The snubberless concept offer suppression of RC network and it is suitable for applications such as on/off function in static relays, heating regulation, induction motor starting circuits, phase control operation in light dimmers, motor speed controllers, and silmilar. TO-3P (Insulated) (41TxxBI) Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the 41T series provides voltage insulated tab (rated at 2500V RMS ) complying with UL standards. MAIN FEATURES SYMBOL VALUE UNIT I T(RMS) 40 A V DRM /V RRM 600 to 1600 V I GT(Q1) 35 to 50 mA ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) SYMBOL IT(RMS) ITSM TEST CONDITIONS VALUE UNIT 40 A TO-3P Tc = 95ºC TO-3P insulated Tc = 80ºC F =50 Hz t = 20 ms 400 F =60 Hz t = 16.7 ms 420 I t 2 t p = 10 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs Peak gate power dissipation (tp = 20µs) PGM T j =125ºC 10 PG(AV) T j =125ºC 1 I2t Value for fusing Average gate power dissipation Storage temperature range Operating junction temperature range www.nellsemi.com A 800 A2s T j =125ºC 50 A/µs T j =125ºC 4 A W Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 5 RoHS 41T Series RoHS SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) 41Txxxx SYMBOL IGT(1) TEST CONDITIONS Unit QUADRANT BW I - II - III V D = 12 V, R L = 30Ω 50 mA 1.3 V MIN. 0.2 V MAX. 60 mA MAX. VGT I - II - III V D = V DRM , R L = 3.3KΩ VGD I - II - III T j = 125°C IH(2) I T = 500 mA IL I G = 1.2 I GT I - III 80 II dV/dt(2) (dI/dt)c(2) mA MAX. V D = 67% V DRM , gate open ,T j = 125°C 100 1000 V/µs 20 A/ms VALUE UNIT MIN. Without snubber, T j = 125°C STATIC CHARACTERISTICS SYMBOL VTM(2) I TM = 60 A, t P = 380 µs T j = 25°C MAX. 1.55 V (2) Threshold voltage T j = 125°C MAX. 0.85 V (2) Dynamic resistance T j = 125°C MAX. 10 mΩ VD = VDRM VR = VRRM T j = 25°C 10 µA 5 mA Vt0 Rd TEST CONDITIONS IDRM IRRM MAX. T j = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCE SYMBOL Rth(j-c) Junction to case (AC) TO-3P TO-3P Insulated Rth(j-a) Junction to ambient TO-3P, TO-3P Insulated VALUE UNIT 0.6 0.9 °C/W 50 S = Copper surface under tab. PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER 600 V 800 V 1000 V 1200 V 1600 V V V V V V 41TxxB-BW/ 41TxxBl-BW SENSITIVITY TYPE PACKAGE 50 mA Snubberless TO-3P BI: Insulated TO-3P package ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 41TxxB-yy 41TxxB-yy TO-3P 4.3g 30 Tube 41TxxBI-yy 41TxxBI-yy TO-3P insulated 4.8g 30 Tube Note: xx = voltage, yy = sensitivity www.nellsemi.com Page 2 of 5 RoHS 41T Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME B - BW 41 T 06 Current 41 = 40A Triac series Voltage 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V 16 = 1600V Package type B = TO-3P (non-insulated) BI = TO-3P ( insulated ) IGT Sensitivity BW = 50mA Snubberless Fig.1 Maximum power dissipation versus on-state rms current (full cycle) Fig.2 On-state rms current versus case temperature (full cycle) P (W) IT(RMS) (A) 50 45 α=180° 40 40 35 30 30 TO-3P(insulated) 25 20 20 180° TO-3P 15 α 10 10 α I T(RMS) (A) T C (°C) 5 0 0 0 5 10 15 20 25 30 35 40 0 Fig.3 Relative variation of thermal impedance versus pulse duration. 25 75 50 100 125 Fig.4 On-state characteristics (maximum values). K=[Zth/Rth] ITM(A) 1E+00 400 Zth(j-c) 100 Tj=Tj max 1E-01 TO-3P TO-3P(insulated) Tj=25°C 10 1E-02 VTM(V) tp(s) 1E-03 1E-03 1E-02 www.nellsemi.com 1E-01 1E+00 Tj max. Vto = 0.85 V Rd = 10 mΩ 1E+01 1E+02 1E+0.3 Page 3 of 5 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 RoHS 41T Series RoHS SEMICONDUCTOR Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse and corresponding value of l 2 t. Fig.5 Surge peak on-state current versus number of cycles. ITSM(A),l2t(A2s) ITSM(A) 10000 450 I TSM 400 t=20ms 350 One cycle Non repetitive 300 1000 I2t Tj initial=25°C 250 T j initial =25°C Pulse width tp <10 ms dl/dt limitation 50A/µs 200 Repetitive Tc=70°C 150 100 50 tp(ms) Number of cycles 0 10 1 100 1000 100 0.01 Fig.7 Relative variation of gate trigger, holding and latching current versus junction temperature. 0.10 1.00 10.00 Fig.8 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [(dV/dt)c] / specified (dI/dt)c l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] 2.0 2.5 1.8 2.0 1.6 l GT 1.4 1.5 Typical values 1.2 lH & lL 1.0 1.0 0.8 0.5 0.6 T j (°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 0 T j (°C) 0 (dV/dt)c (V/µs) 0.4 25 www.nellsemi.com 50 75 100 125 Page 4 of 5 0.1 1.0 10.0 100.0 RoHS 41T Series RoHS SEMICONDUCTOR Case Style TO-3P www.nellsemi.com Page 5 of 5