6PT Series SEMICONDUCTOR RoHS RoHS Stansard SCRs, 6A Main Features 2 Symbol Value Unit I T(RMS) 6 A 2 1 V DRM /V RRM 600 to 1000 V I GT 15 mA 1 2 2 3 3 TO-251 (I-PAK) (6PTxxF) TO-252 (D-PAK) (6PTxxG) 2 DESCRIPTION The 6PT series of silicon controlled rectifiers are high performance glass passivated technology, and are designed for power supply up to 400Hz on resistive or inductive load. 1 2 1 3 TO-220AB (Non-lnsulated) 2 3 TO-220AB (lnsulated) (6PTxxAI) (6PTxxA) 2 (A2) (G)3 1(A1) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) IT(RMS) Average on-state current (180° conduction angle) IT(AV) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) ITSM I2t Value for fusing TEST CONDITIONS SYMBOL VALUE UNIT 6 A 3.8 A TO-251/TO-252/TO-220AB Tc=110°C TO-220AB insulated Tc=105°C TO-251/TO-252/TO-220AB Tc=110°C TO-220AB insulated Tc=105°C F =50 Hz t = 20 ms 70 F =60 Hz t = 16.7 ms 73 t p = 10 ms I2t A 24.5 A2s Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F = 60 Hz T j = 125ºC 50 A/µs Peak gate current IGM T p = 20 µs T j = 125ºC 4 A Maximum gate power PGM T p =20 µs T j = 125ºC 10 W T j =125ºC 1 W T j =125ºC 600 to 1000 V Average gate power dissipation PG(AV) Repetitive peak off-state voltage VDRM Repetitive peak reverse voltage VRRM Storage temperature range Operating junction temperature range Tstg - 40 to + 150 Tj - 40 to + 125 ºC www.nellsemi.com Page 1 of 5 6PT Series SEMICONDUCTOR ELECTRICAL SPECIFICATIONS SYMBOL (TJ = 25 ºC unless otherwise specified) 6PTxxxx Unit Max. 15 mA Max. 1.3 V Min. 0.2 V TEST CONDITIONS IGT V D = 12V, R L = 30Ω VGT V D = V DRM , R L = 3.3KΩ VGD RoHS RoHS R GK = 220Ω, T j = 110°C IH I T = 100mA, Gate open Max. 30 mA IL I G = 1.2× I GT Min. 50 mA V D = 67% V DRM , Gate open, T j = 110°C Min. 200 V/µs dV/dt VTM I T = 12A, t P = 380 µs T j = 25°C Max. 1.6 V IDRM V D =V DRM , V R =V RRM T j = 25°C Max. 5 µA IRRM R GK = 220Ω T j = 110°C Max. 2 mA tq V D = 67% V DRM , I TM = 12A , V R = 25V dI TM = 30A/ µs, dV D /dt =50V/ µs T j = 110°C TYP. 70 µS THERMAL RESISTANCE Rth(j-c) Junction to case (DC) S = 0.5 cm 2 Rth(j-a) VALUE UNIT IPAK/DPAK/TO-220AB 2.5 °C/W TO-252(D-PAK) 70 TO-220AB 60 Parameter SYMBOL Junction to ambient °C/W 100 TO-251(I-PAK) PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER PACKAGE SENSITIVITY 1000 V 600 V 800 V 6PTxxA/6PTxxAl V V V 15 mA TO-220AB 6PTxxF V V V 15 mA I-PAK 6PTxxG V V V 15 mA D-PAK ORDERING INFORMATION MARKING PACKAGE WEIGHT , BASE Q TY DELIVERY MODE 6PTxxA 6PTxxA TO-220AB 2.0g 50 Tube 6PTxxAI 6PTxxAI TO-220AB (insulated) 2.3g 50 Tube 6PTxxF 6PTxxF TO-251(I-PAK) 0.40g 80 Tube 6PTxxG 6PTxxG TO-252(D-PAK) 0.38g 80 Tube ORDERING TYPE Note: xx = voltage www.nellsemi.com Page 2 of 5 6PT Series SEMICONDUCTOR RoHS RoHS ORDERING INFORMATION SCHEME 6 PT 06 Current 6 = 6A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) F = TO-251 (IPAK) G = TO-252 (DPAK) Fig.1 Maximum average power dissdipation versus average on-state current Fig.2 Correlation between maximum average power dissipation and maximum allowable temperature(T amb and T lead ) P(W) 7 7 T lead (°C) P(W) R th =15 ° C/W α=180° 6 R th =10 ° C/W R th =5 ° C/W R th =0 ° C/W 110 6 DC α=180° α=120° 5 5 α=90° α=60° 4 4 α=30° 3 115 3 2 2 360° 120 1 1 I T(AV) (A) 0 0.0 0.5 1.0 1.5 2.0 www.nellsemi.com 2.5 α 3.0 3.5 4.0 Tamb( ° C) 0 4.5 5.0 125 0 Page 3 of 5 20 40 60 80 100 120 140 Fig.4 Relative variation of thermal impedance versus pulse duration Fig.3 Average on-state current versus case temperature K=[Zth(j-c)/Rth(j-c)] I T (AV)(A) 7 RoHS RoHS 6PT Series SEMICONDUCTOR 1 DC Z th(j-c) 6 TO-220AB Insulated 5 α=180° 4 Z th(j-a) 0.1 3 TO-251/TO-252 TO-220AB 2 1 T case (°C) 0 0 10 20 30 40 50 60 70 80 0.01 1E-3 90 100 110 120 130 Fig.5 Relative variation of gate trigger current versus junction temperature t p (s) 1E-2 1E+0 1E-1 1E+1 1E+2 5E+2 Fig.6 Surge peak on-state current versus number of cycles I T(AV) (A) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25 C] 2.5 80 70 2 tp=10ms 60 One cycle 50 1.5 I GT 1 Tj inital=25°C 40 30 I H &I L 20 0.5 10 0 T j (°C) 0 -40 -30 -20 -10 Number of cycles 10 1 0 10 20 30 40 50 60 70 80 90 100 110 Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, 1000 100 Fig.8 On-state characteristics (maximum values) and corresponding values of l²t I TSM (A),I²t(A²s) 100 I TM (A) Tj inital=25 C Tj=max I TSM 100 10 Tj=25°C I²t Tjmax V t0 =0.1V Rd=46mΩ t p (ms) 10 1 2 www.nellsemi.com V TM (V) 1 5 10 1 Page 4 of 5 2 3 4 5 6PT Series SEMICONDUCTOR RoHS RoHS Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) PIN 2 1 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 1.37(0.054) 5.2(0.204) 0.62(0.024) 0.48(0.019) 6.2(0.244) 4T 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) RoHS 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 1.37(0.054) 0.62(0.024) 0.48(0.019) 2 1 1.14(0.045) 0.76(0.030) 2.28(0.090) 2 3 9.35(0.368) 10.1(0.397) 0.89(0.035) 0.64(0.025) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) 2 (A2) 4.57(0.180) (G)3 1(A1) www.nellsemi.com Page 5 of 5