RoHS 8T Series RoHS SEMICONDUCTOR TRIACs, 8A Snubberless, Logic Level and Standard MAIN FEATURES 2 2 SYMBOL VALUE UNIT I T(RMS) 8 A V DRM /V RRM 600 to 1000 V I GT(Q1) 5 to 50 mA 2 1 1 2 3 3 TO-251 (I-PAK) (8TxxF) TO-252 (D-PAK) (8TxxG) A2 1 DESCRIPTION The 8T triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control A1 A2 G TO-220AB (non-Insulated) (8TxxA) operation in light dimmers, motor speed controllers,... 2 3 TO-220AB (lnsulated) (8TxxAI) A2 The snubberless and logic level versions are specially recommended for use on inductive loads, thanks to their high commutation performances. A1 A2 G By using an internal ceramic pad, the 8T series provides voltage insulated tab (rated at 2500V RMS ) complying with UL standards (File ref. :E320098) (D2PAK) TO-263 (8TxxH) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS TO-251/TO-252/TO-263/TO-220AB RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) IT(RMS) ITSM t = 20 ms 80 F =60 Hz t = 16.7 ms 84 Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs PG(AV) T j =125ºC Operating junction temperature range www.nellsemi.com A F =50 Hz t p = 10 ms Storage temperature range 8 Tc = 100ºC 2 Average gate power dissipation UNIT TO-220AB insulated I t I2t Value for fusing VALUE Tc = 110ºC A 32 A2s T j =125ºC 50 A/µs T j =125ºC 4 A 1 W Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 7 RoHS 8T Series RoHS SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) 8Txxxx SYMBOL IGT(1) QUADRANT TEST CONDITIONS V D = V DRM , R L = 3.3KΩ T j = 125°C IH(2) I T = 100 mA IL I G = 1.2 I GT (dI/dt)c(2) CW BW 05 10 35 50 I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V MAX. I - III dV/dt(2) SW mA V D = 12 V, R L = 30Ω VGT VGD Unit TW 10 15 40 60 15 20 50 70 25 35 60 80 20 40 400 1000 3.5 5.4 - - 1.5 2.8 - - - - 4.5 7 mA MAX. II V D = 67% V DRM , gate open ,T j = 125°C MIN. (dV/dt)c = 0.1 V/µs T j = 125°C (dV/dt)c = 10 V/µs T j = 125°C Without snubber T j = 125°C MIN. mA V/µs A/ms ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) Standard (4 quadrants) 8Txxxx TEST CONDITIONS SYMBOL IGT(1) QUADRANT I - II - III V D = 12 V, R L = 30Ω C MAX. IV VGT VGD V D = V DRM , R L = 3.3KΩ, T j = 125°C IH(2) I T = 200 mA IL I G = 1.2 I GT (dV/dt)c(2) 25 50 50 100 UNIT mA ALL 1.3 V ALL 0.2 V MAX. I - III - IV MAX. II dV/dt(2) B 25 50 35 50 60 80 mA mA V D = 67% V DRM , gate open, T j = 125°C MIN. 200 400 V/µs (dI/dt)c = 3.5 A/ms, T j = 125°C MIN. 5 10 V/µs STATIC CHARACTERISTICS SYMBOL VTM(2) TEST CONDITIONS VALUE UNIT MAX. 1.55 V T j = 125°C MAX. 0.85 V Dynamic resistance T j = 125°C MAX. 50 mΩ VD = VDRM VR = VRRM T j = 25°C 5 µA 1 mA I TM = 11 A, t P = 380 µs T j = 25°C Threshold voltage R d (2) IDRM IRRM Vt0 (2) MAX. T j = 125°C Note 1: minimum lGT is guaranted at 5% of lGT max. Note 2: for both polarities of A2 referenced to A1. www.nellsemi.com Page 2 of 7 RoHS 8T Series RoHS SEMICONDUCTOR THERMAL RESISTANCE VALUE UNIT TO-220AB, TO-251, TO-252, TO-263 TO-220AB Insulated 1.6 2.5 °C/W TO-263 45 TO-252 70 TO-220AB Insulated, TO-220AB 60 SYMBOL Rth(j-c) Junction to case (AC) S = 1 cm 2 Rth(j-a) Junction to ambient S = 0.5 cm 2 °C/W 100 TO-251 S = Copper surface under tab. PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY TYPE PACKAGE V 50 mA Standard TO-220AB V V 50 mA Snubberless TO-220AB V V V 25 mA Standard TO-220AB 8TxxA-CW/8TxxAl-CW V V V 35 mA Snubberless TO-220AB 8TxxA-SW/8TxxAl-SW V V V 10 mA Logic level TO-220AB 8TxxA-TW/8TxxAI-TW V V V 5 mA Logic level TO-220AB 8TxxG -SW V V V 10 mA Logic level DPAK 8TxxF -SW V V V 10 mA Logic level IPAK 8TxxH -SW V V V 10 mA Logic level D 2 PAK 8TxxG -CW V V V 35 mA Snubberless DPAK 8TxxH -CW V V V 35 mA Snubberless D 2 PAK 8TxxF -CW V V V 35 mA Snubberless IPAK 600 V 800 V 1000 V 8TxxA-B/ 8TxxAl-B V V 8TxxA-BW/8TxxAl-BW V 8TxxA-C/8TxxAl-C AI: non insulated TO-220AB package ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 8TxxA-yy 8TxxA-yy TO-220AB 2.0g 50 Tube 8TxxAI-yy 8TxxAI-yy TO-220AB (insulated) 2.3g 50 Tube 8TxxF-yy 8TxxF-yy TO-251(I-PAK) 0.40g 80 Tube 8TxxG-yy 8TxxG-yy TO-252(D-PAK) 0.38g 80 Tube 8TxxH-yy 8TxxH-yy D 2 PAK 2.0g 50 Tube Note: xx = voltage, yy = sensitivity www.nellsemi.com Page 3 of 7 RoHS 8T Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME A - BW T 06 8 Current 8 = 8A Triac series Voltage 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) AF= TO-220F(ISOWAT TO-220AB, insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) H = TO-263 (D 2 PAK) IGT Sensitivity B = 50mA Standard C = 25mA Standard SW = 10mA Logic Level BW = 50mA Snubberless CW = 35mA Snubberless TW = 5mA Logic Level Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) P (W) IT(RMS) (A) 10 10 9 9 8 8 7 7 6 6 5 5 4 4 3 3 2 2 I T(RMS) (A) 1 0 0 1 2 3 4 TO-220AB ( insulated ) T C (°C) 1 5 6 7 8 0 TO-220AB TO-251 TO-252 TO-263 0 Fig.2-2 RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) 25 75 50 100 125 Fig.3 Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] IT(RMS) (A) 3.5 1E+0 Zth(j-c) D 2 PAK (S=1cm 2 ) 3.0 2.5 DPAK (S=0.5cm 2 ) 2.0 DPAK/IPAK Zth(j-a) 1E-1 2 TO-220AB/D PAK Zth(j-a) 1.5 1E-2 1.0 0.5 0.0 Tamb(°C) 0 25 www.nellsemi.com 50 tp(s) 75 100 125 Page 4 of 7 1E-3 1E-3 1E-2 1E-1 1E+0 1E+1 5E+2 1E+2 RoHS 8T Series RoHS SEMICONDUCTOR Fig.4 On-state characteristics (maximum values). Fig.5 Surge peak on-state current versus number of cycles. ITM (A) ITSM (A) 100 90 Tj=Tj max Tj max. Vto = 0.85 V Rd = 50 mΩ 80 t=20ms 70 One cycle 60 Non repetitive Tj initial=25°C 50 10 40 Tj=25°C Repetitive Tc=100°C 30 20 10 VTM(V) Number of cycles 0 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.5 4.0 5.0 Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. and corresponding value of l 2 t. 10 1 100 1000 Fig.7 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). lTSM (A), l 2 t(A 2 s) lGT,lH,lL[T j ] / lGT,lH,lL [T j =25°C] 2.5 1000 Tj initial=25°C 2.0 IGT dI/dt limitation: 50A/µs ITSM 1.5 100 IH & IL 1.0 I2t 0.5 Tj(°C) tp (ms) 10 0.01 0.10 1.00 10.00 Fig.8-1 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types 0.0 -40 0 20 40 60 80 100 120 140 Fig.8-2 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Standard Types (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -20 2.0 TW 1.8 C 1.6 1.4 CW/BW B 1.2 1.0 SW 0.8 0.1 www.nellsemi.com 1.0 (dV/dt)c (V/µs) 0.6 (dV/dt)c (V/µs) 10.0 100.0 Page 5 of 7 0.4 0.1 1.0 10.0 100.0 RoHS 8T Series RoHS SEMICONDUCTOR Fig.9 Relative variation of critical rate of decrease of main current versus junction temperature. Fig.10 DPAK and D 2 PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board Fr4, copper thickness: 35 µm.) (dI/dt)c [Tj] / (dI/dt)c [Tj specified] Rth(j-a) (°C/W) 6 100 90 5 80 70 4 60 DPAK 50 3 40 2 20 1 10 Tj(°C) 0 D2PAK 30 0 25 Case Style 75 50 100 0 125 S(cm2) 0 8 4 12 TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) www.nellsemi.com Page 6 of 7 2.79 (0.110) 16 20 24 28 32 36 40 RoHS 8T Series RoHS SEMICONDUCTOR Case Style TO-251 (I-PAK) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 1.37(0.054) 5.2(0.204) 0.62(0.024) 0.48(0.019) 6.2(0.244) 4T 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 1.37(0.054) 0.62(0.024) 0.48(0.019) 2 1 1.14(0.045) 0.76(0.030) 2.28(0.090) 2 3 9.35(0.368) 10.1(0.397) 0.89(0.035) 0.64(0.025) 4.57(0.180) www.nellsemi.com Page 7 of 7 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) RoHS