RoHS MSTP110 Series RoHS SEMICONDUCTOR Nell High Power Products Three-phase half-controlled bridge rectifier, 110A MSTP110-12 Thru MSTP 110-16 Dimensions in mm C~ D~ A+ FEATURES E~ B- 十字六角螺絲M6x10 Glass-passivated chips Low forward voltage drop UL approved file E320098 Compliant to RoHS APPLICATIONS Power supply for DC power device Input rectifier for PWM converter ADVANTAGE C(~) D(~) E(~) Easy mounting 2 5 3 6 Small volume, light weight Small thermal resistance 1 Low temperature rise A(+) 4 B(-) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IT(AV) or IF(AV) 85 ºC 110 ITSM, IFSM 50 HZ 1150 60 Hz 1230 I2t VRRM 50 Hz 6600 60 Hz 6280 Range 1200 to 1600 UNITS A A2S V TStg - 40 to 125 TJ Page 1 of 2 ºC RoHS MSTP110 Series RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 MSTP VDRM, MAXIMUM REPETITIVE IRRM, PEAK OFF-STATE VOLTAGE, IDRM GATE OPEN CIRCUIT AT 125 ºC V mA 10 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current (thyristors) IT(AV) Maximum average forward current (diodes) IF(AV) Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM 2 Maximum I t for fusing Forward voltage 2 l t VT VF Maximum holding current IH Maximum latching current IL TEST CONDITIONS VALUES 180º conduction, half sine wave, TC = 85 ºC 110 t = 10 ms 1150 UNITS A 1230 t = 8.3 ms t = 10 ms TJ = 25 ºC, no voltage reapplied t = 8.3 ms IT =200A IF =200A 6600 6280 TJ = 25 ºC 1.7 TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 200 TJ = 25 ºC, anode supply = 6 V, resistive load 400 A2s V mA TRIGGERING PARAMETER SYMBOL Maximum gate voltage required to trigger VGT Maximum gate current required to trigger IGT TEST CONDITIONS TJ = 25 ºC Anode supply = 6 V resistive load VALUES UNITS 1.5 V 100 mA VALUES UNITS 10 mA BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current at VRRM, VDRM IRRM, IDRM TJ = 125 °C, gate open circuit Maximum RMS insulation voltage VINS 50 Hz ,circuit to base, all terminals shorted Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C, linear to 0.67 VDRM 2500 (1 min) 3500 (1 s) V 1000 V/µs VALUES UNITS - 40 to 125 ºC THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction operating and storage temperature range SYMBOL TEST CONDITIONS T J , T stg Maximum internal thermal resistance, junction to case per leg R thJC DC operation Typical thermal resistance, case to heatsink per module R thCS Mounting surface flat, smooth and greased Mounting torque ± 15 % 0.65 K/W A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Approximate weight Page 2 of 2 . 0.108 5 Nm 265 g 9.3 oz.