RoHS RoHS N-HFA60PA40C SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 2 x 30 A FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions Designed and qualified for industrial level TO-247 AB BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count common cathode 2 DESCRIPTION HFA60PA40C is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 400V and 30 A per leg continuous current, the HFA60PA40C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the FRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to “snap-off” during the t b portion of recovery. The FRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These FRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The FRED HFA60PA40C is ideally suited for applications in power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. 1 Anode 1 2 Common cathode 3 Anode 2 PRODUCT SUMMARY VR 400 V VF at 30A at 25 °C 1.3 V IF(AV) 2 x 30 A trr (typical) 22 ns TJ (maximum) 150 °C Qrr (typical) 49 nC lRRM (typical) 3.0 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF VALUES UNITS 400 V 30 Tc = 100 ºC 60 l FSM 320 Operating junction and storage temperature range T J , T Stg - 55 to + 150 www.nellsemi.com Page 1 of 5 Single pulse forward current A ºC N-HFA60PA40C SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Cathode to anode breakdown voltage Maximum forward voltage (TJ = 25 ºC unless otherwise specified) SYMBOL VBR VFM MIN. TYP. MAX. 400 - - IF = 30 A - 1.3 1.5 IF = 60 A - 1.6 - IF = 30 A, TJ = 125 ºC - 1.2 - V R = V R rated - - T J = 125° C, V R = V R rated - - 100 500 - pF - nH MAX. UNITS TEST CONDITIONS IR = 100 µA Maximum reverse leakage current IRM Junction capacitance CT V R = 200 V - 60 Series inductance LS Measured lead to lead 5 mm from package body - 12 DYNAMIC RECOVERY CHARACTERISTICS PERLEG PARAMETER SYMBOL Reverse recovery time Peak recovery current Reverse recovery charge TEST CONDITIONS MIN. TYP. - 28 35 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 22 - trr1 TJ = 25 ºC - 32 50 trr2 TJ = 125 ºC - 95 - IRRM1 IF= 30A dIF/dt = -200 A/µs VR = 266 V - 3 - 7 - TJ = 25 ºC - 49 - TJ = 125 ºC - 360 - TJ = 125 ºC Qrr1 Qrr2 µA ns - TJ = 25 ºC IRRM2 V (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr UNITS A nC THERMAL - MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063'' from case (1.6 mm) for 10 s MIN. TYP. - - MAX. 300 - - 0.67 - - 0.34 UNITS °C RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - - 0.21 - oz. - 12 (10) kgf . cm (lbf . in) Weight 6.0 (5.0) Mounting torque Marking device www.nellsemi.com Case style TO-247AB (JEDEC) Page 2 of 5 HFA60PA40C g N-HFA60PA40C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.9 0.60 0.50 0.7 0.40 0.5 Note : 0.30 PDM Thermal impedance(°C/W), Z θJC 0.70 0.3 0.20 t1 t2 t 0.10 Duty Factor D = 1 /t 2 Peak TJ = PDM x ZθJC + TC 0.1 SINGLE PULSE 0.05 0 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 Rectangular pulse duration (seconds) Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change 120 Reverse recovery time, t rr (ns) 100 80 (A) Forward current, I F 100 60 T J =125°C 40 T J =25°C T J =150°C 20 T J =125°C V R =266V 60A 80 30A 15A 60 40 20 T J =-55°C 0 0 0 0.5 1.5 1 0 2.5 2 Anode-to-cathode voltage (V), V F 60A 30A 400 15A 200 30 600 800 1000 1200 T J =125°C V = 266V R 60A 25 20 (A) 800 (nC) Reverse recovery charge, Q rr T J =125°C V = 266V R 600 400 Fig 5. Reverse recovery current vs. current rate of change Reverse recovery current, I RRM Fig.4 Reverse recovery charge vs. current rate of change 1000 200 Current rate of change(A/ μs ), -di F /dt 15 30A 10 15A 5 0 0 0 200 400 600 800 1000 1200 0 Current rate of change (A/ μ s), -di F /dt www.nellsemi.com 200 400 600 800 1000 Current rate of change (A/ μ s), -di F /dt Page 3 of 5 1200 N-HFA60PA40C SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig6. Dynamic parameters vs. junction temperature Fig.7 Maximum average forward current vs. case temperature 90 1.2 t rr 70 1.0 60 I RRM 0.8 t rr 0.6 40 20 Q rr 10 0.0 0 0 25 50 75 100 125 150 25 Junction temperature ( ° C),T J 350 300 250 200 150 100 50 0 1 10 100 200 reverse voltage (V), V R www.nellsemi.com 50 75 100 125 150 Case temperature ( ° C) Fig.8 Junction capacitance vs. reverse voltage (pF) 50 30 0.4 0.2 Junction capacitance, C J Duty cycle = 0.5 T J =175°C 80 Q rr l F(AV) (A) (Normalized to 1000A/ µ s) Dynamic parameters, K f 1.4 Page 4 of 5 175 N-HFA60PA40C SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION TABLE Device code - N 1 www.nellsemi.com HFA 60 PA 40 C 2 3 4 5 6 1 - Nell Semiconductors product 2 - FRED family 3 - Current rating ( 60 = 30 A, 30A x 2) 4 - Package outline (PA = TO-247, 3 pins) 5 - Voltage rating (40 = 400 V) 6 - Configuration (C = Center tap common cathode) Page 5 of 5