RoHS NKD160S/NKJ160S/NKC160S Series RoHS SEMICONDUCTOR Nell High Power Products Standard Recovery Diodes, 160 A (INT-A-PAK Power Modules) 23 23 2-Ø6.5 17.5 26 16.5 80 93 FEATURES 3-M5 SCREWS • High voltage 21 30.5 • Electrically isolated by DBC ceramic (AI 2O3) • 3000 V RMS isolating voltage 7.5 • Industrial standard package • High surge capability • Glass passivated chips • Modules uses high voltage power diodes in four basic configurations All dimensions in millimeters • Simple mounting • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS ~ + - NKD - + + NKJ + - - NKC • DC motor control and drives • Battery charges • Welders • Power converters PRODUCT SUMMARY IF(AV) 160 A Type Modules - Diode, High Voltage MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS TC IF(RMS) IFSM I2t UNITS 160 A 100 °C 251 50 Hz 6000 60 Hz 6300 50 Hz 180 60 Hz 163 I2√t 1800 VRRM TJ VALUE Range www.nellsemi.com Page 1 of 3 A kA2s kA2√s 400 to 1600 V -40 to 150 °C RoHS NKD160S/NKJ160S/NKC160S Series RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VRSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 NKD160..S 08 800 900 NKJ160..S 12 1200 1300 NKC160..S 14 1400 1500 16 1600 1700 8 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IF(AV) 180° conduction, half sine wave Maximum RMS on-state current IF(RMS) 180° conduction, half sine wave ,50Hz ,TC = 100°C Maximum peak, one-cycle, on-state non-repetitive surge current IFSM t = 10 ms t = 8.3 ms No voltage reapplied I 2t t = 8.3 ms A 100 °C 251 t = 8.3 ms A 6300 Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms UNITS 160 6000 t = 10 ms Maximum I 2t for fusing VALUE 180 163 126 kA2s 114 Maximum I 2√t for fusing 2 I √t t = 0.1 ms to 10 ms, no voltage reapplied 1800 kA2√s Maximum forward voltage drop VFM IFM = 300A , TJ = 25 °C, 180° conduction 1.4 V VALUES UNITS BLOCKING PARAMETER SYMBOL Maximum peak reverse and off-state leakage current IRRM RMS isolation Voltage VISO TEST CONDITIONS TJ = 150 °C 8 50 Hz, circuit to base ,all terminals shorted ,t = 1s 3000 t = 60s 2500 mA V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TStg , TJ VALUES - 40 to 150 UNITS °C Maximum thermal resistance, junction to ca se per junction RthJC DC operation Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.054 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 to 6 N.m 140 g 4.9 oz. Mounting torque ± 10 % IAP to heatsink, M6 busbar to IAP, M5 0.21 °C/W Approximate weight New INT-A-PAK Case style www.nellsemi.com Page 2 of 3 RoHS NKD160S/NKJ160S/NKC160S Series RoHS SEMICONDUCTOR Nell High Power Products Fig2.Forward Current Derating Curve Fig1. Power dissipation 300 250 w A DC rec.120 rec.30 DC 200 sin.180 sin.180 rec.120 rec.60 150 150 rec.60 100 rec.30 50 Pvtct Io 0 0 0 Io 100 50 0 Tc A 240 120 °C 150 Fig4.Max Non-Repetitive Forward Surge Current Fig3.Transient thermal impedance 8000 0.3 50HZ A °C/W Zth(j-c) 0.15 4000 0 0 0.001 0.01 1 0.1 10 S 100 1 Fig5.Forward Characteristics 400 A 300 200 typ. max. 100 25 °C IF 125 °C 0 0 VF 0.5 www.nellsemi.com 1.0 1.5 V 2.0 Page 3 of 3 10 cycles 100