RoHS RoHS NKT110A/NKH110A Series SEMICONDUCTOR Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 110A (ADD-A-PAK Power Modules) 80 3 21 5.6 5 4 ADD-A-PAK 13.6 7 2 6 1 2-Ø6.4 15 20 20 15 92 FEATURES • High voltage 68 3-M5 SCREWS • Electrically isolated by DBC ceramic (AI 2O3) 4-2.8x0.8 18 31 • Industrial standard package 5 6 • High surge capability 29.5 • 3000 V RMS isolating voltage • Glass passivated chips • Modules uses high voltage power thyristor/diodes in two basic configurations • Simple mounting All dimensions in millimeters • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS (6) (7) NKT • DC motor control and drives (5) (4) • Battery charges • Welders • Power converters NKH • Lighting control (5) (4) • Heat and temperature control PRODUCT SUMMARY 110 A IT(AV) MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUE CHARACTERISTICS IT(AV) 85 °C IT(RMS) 85 °C 173 50 Hz 2400 60 Hz 2520 50 Hz 28.8 60 Hz 26.3 ITSM /IFSM I2t 110 I2√t 288 UNITS A A kA2s kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 °C www.nellsemi.com Page 1 of 4 NKT110A/NKH110A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 NKT110..A NKH110..A IRRM /I DRM AT 125 °C mA 12 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave ,50Hz Maximum RMS on-state current lT(RMS) 180° conduction, half sine wave ,50Hz ,TC = 85°C Maximum peak, one-cycle, on-state non-repetitive surge current ITSM t = 10 ms I 2t UNITS 110 A 85 °C 173 2400 t = 8.3 ms No voltage reapplied t = 10 ms Maximum I 2t for fusing VALUE t = 8.3 ms 2520 Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms t = 8.3 ms A 28.8 26.3 kA2s 20.2 18.4 Maximum I 2√t for fusing 2√ I t t = 0.1 ms to 10 ms, no voltage reapplied 288 Maximum on-state voltage drop VTM ITM = 330A , TJ = 25 °C, 180° conduction 1.6 Maximum forward voltage drop VFM IFM = 330A , TJ = 25 °C, 180° conduction 1.3 kA2√s V Maximum holding current IH Anode supply = 6 V,resistive load, TJ = 25 °C 150 Maximum latching current IL Anode supply = 6 V resistive load, TJ = 25 °C 400 SYMBOL TEST CONDITIONS VALUES UNITS 12 mA mA BLOCKING PARAMETER Maximum peak reverse and off-state leakage current IRRM IDRM TJ = 125 °C RMS isolation Voltage VISO 50 Hz, circuit to base, all terminals shorted Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated V DRM www.nellsemi.com Page 2 of 4 2500 (1min) 3000 (1s) 500 V V/μs NKT110A/NKH110A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak gate current Maximum peak negative gate voltage - VGT 3 t p ≤ 5 ms, TJ = TJ maximum UNITS W A 10 V Maximum required DC gate voltage to trigger VGT 0.7~1.8 Anode supply = 6 V, resistive load; Ra = 1 Ω TJ = 25 °C Maximum required DC I GT gate current to trigger Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 20~150 mA 0.25 V 10 mA 150 A/μs TJ = TJ maximum, 66.7% V DRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS VALUES TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to ca se per junction RthJC DC operation Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased °C 0.25 °C/W AAP to heatsink, M6 Mounting torque ± 10 % busbar to AAP, M5 0.069 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. Approximate weight 4 N.m 120 g 4.23 oz. ADD-A-PAK Case style ORDERING INFORMATION TABLE Device code www.nellsemi.com UNITS NK T 110 1 2 3 / 16 A 4 5 1 - Module type 2 - Circuit configuration 3 - Current rating: IT(AV) 4 - Voltage code x 100 = V RRM 5 - Assembly type,”A” for soldering type Page 3 of 4 RoHS RoHS NKT110A/NKH110A Series SEMICONDUCTOR Nell High Power Products Fig.2 Max. Junction To case Thermal Impedance Vs. Time 3 0.3 2.6 0.25 Thermal impedance (°C/W) Peak On-state voltage (V) Fig.1 Peak On-state Voltage vs. Peak On-state Current 2.2 1.8 1.4 1 0.2 0.15 0.1 0.05 0 0.6 10 100 1000 0.001 0.01 0.1 On-state current (A) Time (s) Fig.3 Power Dissipation Vs. Average On-state Current Fig.4 Case Temperature Vs. Average O n-state Current 300 140 180° 250 120° 60° 200 90° 30° 150 100 Case Temperature (°C) Power Dissipation (W) 10 1 120 100 80 60 40 50 60° 30° 20 90° 120° 180° 0 0 30 90 60 120 150 0 0 30 90 60 On-state average current (A) 120 150 180 210 On-state average current (A) Fig.5 Surge On-state Current Vs. Cycles Fig.6 Gate characteristics 2 2 Gate voltage (V) Surge On-state current (KA) 2.5 1.5 1 10¹ 5 2 10º 5 2 0.5 1 10 100 2 5 10¯² 2 5 10¯³ Gate current (mA) Cycles @50Hz www.nellsemi.com 10¯¹ 10¹ Page 4 of 4 2 5