RoHS NKD160/NKJ160/NKC160 Series RoHS SEMICONDUCTOR Nell High Power Products Standard Recovery Diodes, 160 A (INT-A-PAK Power Modules) 23 23 12+1 - 34+2 - 24 2−Ø6.3 15+1 FEATURES 80+1 • High voltage 94+1 3-M6 SCREWS • Electrically isolated by DBC ceramic (AI 2O3) • High surge capability 29+1 - 36+2 - • Industrial standard package 9 7+0.5 • 3000 V RMS isolating voltage • Glass passivated chips 0.8 • Modules uses high voltage power diodes in four basic configurations All dimensions in millimeters • Simple mounting • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS ~ + - NKD - + + NKJ + - - NKC • DC motor control and drives • Battery charges • Welders • Power converters PRODUCT SUMMARY IF(AV) 160 A Type Modules - Diode, High Voltage MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS TC IF(RMS) IFSM I2t UNITS 160 A 100 °C 251 50 Hz 3870 60 Hz 4072 50 Hz 75 60 Hz 68 I2√t 748 VRRM TJ VALUE Range www.nellsemi.com Page 1 of 3 A kA2s kA2√s 400 to 1600 V -40 to 150 °C RoHS NKD160/NKJ160/NKC160 Series RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VRSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 NKD160 08 800 900 NKJ160 12 1200 1300 NKC160 14 1400 1500 16 1600 1700 8 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IF(AV) 180° conduction, half sine wave Maximum RMS on-state current IF(RMS) 180° conduction, half sine wave ,50Hz ,TC = 100°C Maximum peak, one-cycle, on-state non-repetitive surge current IFSM t = 10 ms t = 8.3 ms No voltage reapplied I 2t t = 8.3 ms A 100 °C 251 t = 8.3 ms A 4072 Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms UNITS 160 3870 t = 10 ms Maximum I 2t for fusing VALUE 75 68 52.5 kA2s 47.8 Maximum I 2√t for fusing 2 I √t t = 0.1 ms to 10 ms, no voltage reapplied 748 kA2√s Maximum forward voltage drop VFM IFM = 480A , TJ = 25 °C, 180° conduction 1.3 V VALUES UNITS 10 mA BLOCKING PARAMETER SYMBOL Maximum peak reverse and off-state leakage current IRRM RMS isolation Voltage VISO TEST CONDITIONS TJ = 150 °C 50 Hz, circuit to base ,all terminals shorted ,t = 1s 3000 t = 60s 2500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TStg , TJ VALUES - 40 to 150 UNITS °C Maximum thermal resistance, junction to ca se per junction RthJC DC operation 0.35 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.09 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 to 6 N.m 220 g 7.8 oz. Mounting torque ± 10 % IAP to heatsink, M6 busbar to IAP, M6 °C/W Approximate weight New INT-A-PAK Case style www.nellsemi.com Page 2 of 3 RoHS NKD160/NKJ160/NKC160 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 On-state current vs. voltage characteristic 0.25 Transient thermal impedance (°C/W) 3.6 3.1 On-state peak voltage (V) Fig.2 Transient thermal impedance(junction-case) T J = 150°C 2.6 2.1 1.6 1.1 0.2 0.15 0.1 0.05 0 0.6 100 1000 10000 0.001 0.01 0.1 On-state current (A) Fig.4 Case temperature vs. on-state average current Fig.3 Power consumption vs. average current 160 300 180º 250 90º 180 0 Conduction Angle 30º 200 150 100 Case temperature (°C) Maximum power consumption (W) 350 140 180 0 Conduction Angle 120 100 80 30º 180º 90º 60 50 40 0 0 50 100 150 0 200 40 On-state average current (A) 80 120 160 200 240 On-state average current (A) Fig.6 I 2 t Characteristic Fig.5 On-state surge current vs cycles 7 200 180 6 160 5 3 120 ( 4 KA 2 S ) 140 100 I2t On-state surge current (KA) 10 1 Time (s) 80 2 60 1 1 10 100 10 1 Timet (ms) Cycles @50Hz www.nellsemi.com 40 Page 3 of 3 280