NIEC PB10S4

DIODE
Type:PB10S1,2,4,6
OUTLINE DRAWING
SINGLE – PHASE SILICON BRIDGE RECTIFIER
FEATURES
* Surge Overload Rating : 150 Amperes Peak
* Low Forward Voltage Drop
* Mounting Position : Any
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
Approx Net Weight:8.5g
Symbol
VRRM
VRSM
IO
Surge Forward Current Per 1 Arm
IFSM
Operating JunctionTemperature Range
Storage Temperature Range
Insuration Withstand Voltage
Mounting torque
Tjw
Tstg
Viso
Fw
PB10S1
PB10S2
PB10S4
PB10S6
100
200
400
600
120
240
480
680
10 Tc=102°C, With 200x200x1.5mm,Al-Fin
3.7 Ta=40°C, Without Fin
50 Hz Half Sine Wave,1cycle
150
Non-repetitive
- 40 to + 150
- 40 to + 150
1500 Terminal to Base, AC 1min.
0.5 Recommended value
Unit
V
V
A
A
°C
°C
V
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current Per 1 Arm
Peak Forward Voltage Per 1 Arm
Thermal Resistance
Symbol
Conditions
IRM
Tj= 25°C, VRM= VRRM
VFM Tj= 25°C, IFM= 5A
Rth(j-c) Junction to Case(total)
Min.
Typ.
Max.
Unit
-
-
5
1.0
3.5
µA
V
°C/W
PB10S1,2,4,6 OUTLINE DRAWING (Dimensions in mm)