MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension(mm) 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating Approximate Weight : 220g MAXMUM RATINGS Ratings Symbol PD4M441L PD4M440L Unit Drain-Source Voltage (VGS=0V) Gate - Source Voltage VDSS VGSS 450 500 V V Continuous Drain Current Duty=50% D.C. +/ - 20 30 (Tc=25°C) 21 (Tc=25°C) 60 Tc=25°C) 230 Tc=25°C) -40 to +150 -40 to +125 2000 3.0 2.0 ID Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals IDM PD Tjw Tstg VISO FTOR ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS(th) IGSS rDS(on) gfs Cies Coss Crss td(on) tr td(off) tf Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Rth(j-c) Thermal Resistance, Case to Heatsink Rth(c-f) A W °C °C V N•m Min. Typ. Max. Unit 2.0 - 3.2 190 27 5.2 1.1 0.18 100 60 180 50 1.0 4.0 4.0 1.0 210 - mA VDS=VDSS,VGS=0V Tj=125°C, VDS=VDSS,VGS=0V VDS=VGS, ID=1mA VGS=+/- 20V,VDS=0V VGS=10V, ID=15A VDS=15V, ID=15A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=15A VGS= -5V, +10V RG= 7ohm FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition A V µA m-ohm S nF nF nF ns Min. Typ. Max. - 750 17 21 60 2.0 - Unit A A V ns µC Test Condition Min. Typ. Max. Unit MOS FET Diode Mounting surface flat, smooth, and greased - - 0.56 0.56 0.1 °C/W D.C. IS=30A IS=30A, -dis/dt=100A/µs PD4M44xL 108.0 PD4M440L/441L, P2H4M440L/441L Fig.2- Drain to Source On Voltage vs. Gate to Source Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 50 TC=25℃ 250μs PULSE TEST 8 250μs PULSE TEST Drain to Source Voltage V DS (V) V GS=10V 40 DrainCurrent I D (A) 6V 30 20 5V 10 4V 0 0 2 4 6 8 I D=30A 6 4 ID=15A 0 10 I D=10A 2 12 0 2 4 Drain to Source Voltage V DS (V) Fig.3- Drain to Source On Voltage vs. Junction Temperature (Typical) ID=30A 12 14 16 VGS=0V f=1MHZ TC=25℃ 10 12 Capacitance C (nF) Drain to Source Voltage V DS (V) 10 12 250μs PULSE TEST 14 8 Fig.4- Capacitance vs. Drain to Source Voltage (Typical) VGS=10V 16 6 Gate to Source Voltage V GS (V) 10 8 ID=15A 6 ID=10A 8 6 Ciss 4 4 Coss 2 2 Crss 0 -40 0 0 40 80 120 1 160 3 Fig.5- Gate Charge vs. Gate to Source Voltage (Typical) 5 100 VDD=250V I D=15A TC=25℃ 80μs Pulse Test VDD=100V 3 VDD=250V VDD=400V 12 Switching Time t (μs) Gate to Source Voltage V GS (V) 30 Fig.6- Series Gate Impedance vs. Switching Time (Typical) ID=20A 16 14 10 Drain to Source Voltage V DS (V) Junction Temperature Tj (℃) 10 8 6 4 1 0.3 toff ton 0.1 2 0 0 50 100 150 Total Gate Charge Qg (nC) 200 250 0.05 1 2 5 10 20 50 Series Gate Impedance R G (Ω) 100 200 PD4M440L/441L, P2H4M440L/441L . Fig.8- Source to Drain Diode Forward Characteristics (Typical) Fig.7- Drain Current vs. Switching Time (Typical) 50 40 tr 300 Source Current I S (A) Switching Time t (μs) 1000 td(off) td(on) 100 tf 30 VDD=250V RG=7Ω TC=25℃ 80μs Pulse Test 30 TJ=125℃ 20 10 10 0 0.7 1 3 10 30 70 0 0.4 0.8 1.2 Source to Drain Voltage V SD (V) Drain Current ID (A) Fig.9- Reverse Recovery Characteristics (Typical) Fig.10- Maximum Safe Operating Area 3000 200 …I S=15A ― I S=30A TJ=150℃ Operation in this area is limited by R DS(on) 100 50 1000 trr Drain Current I D (A) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TJ=25℃ 300 10μs 20 100μs 10 1ms 5 2 10ms 100 IRrM 1 30 DC TC=25℃ Tj=150℃MAX Single Pulse 0.5 441L 440L 0.2 0 100 200 300 400 500 600 1 3 10 30 . Normalized Transient Thermal Impedance [rth (J-C)/Rth (J-C) ] Fig.11- Normalized Transient Thermal Impedance (MOSFET) 1x10 1 3 1 3x10 -1 1x10 -1 Per Unit Base Rth(j-c)= 0.56℃/W 1 Shot Pulse 3x10 -2 1x10 -2 10 -5 100 Drain to Source Voltage V DS (V) -dis/dt (A/μs) 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10 1 300 1000