TENTATIVE PIM MODULE PVD75PVD75-12 7.5KW 400V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 7.5kw 400V Inverter MAXMUM RATINGS (Tc=25°C) Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage 3 Phase Average Rectified Out –Put Current Rectification Surge Forward Current Diode I Squared t Critical Rate of Fall of Forward Current Repetitive Peak Off-State Voltage Non-Repetitive Peak Off-State Voltage Average Rectified Out-Put Current Surge Forward Current I Squared t Switch Critical Rate Of Rise Of Turn-On Current Thyristor Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Collector-Emitter Voltage Gate-Emitter Voltage DC Collector Current Inverter 1ms IGBT DC Forward Current 1ms Collector Power Dissipation Collector-Emitter Voltage Gate Emitter Voltage Brake DC IGBT Collector Current 1ms Collector Power Dissipation Repetitive Peak Reverse Voltage Snubber Forward Current, DC Diode Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Isolation Voltage(Terminal to Base) Isolation Resistance(Terminal to Base, @DC=500V) Mounting Torque(Module Base to Heatsink) Approximate Weight : 400g Symbol Rated Value VRRM VRSM IO(AV) IFSM I2t -di/dt VDRM VRSM IO(AV) ITSM I2t di/dt PGM PGM(AV) IGM VGM VRGM VCES VGES IC ICP IF IFM PC VCES VGES IC ICP PC VRRM IF IFSM Tjw Tstg Viso 1600 1700 35 350 612 200(@ :IFM=30A, VR=1000V) 1600 1700 35 350 612 100 5 1 2 10 5 1200 +/- 20V 50 100 50 100 312 1200 +/- 20V 25 50 186 1200 15 70 -40 to +150°C(notes:+125 °C > Can not be biased.) -40 to +125°C 2500(@AC, 1minute), 3000(@AC, 1second) 500 (M4), 1.4 Riso Ftor ELECTRICAL CHARACTERISTICS (Tc=25°C Unless otherwise noted) Characteristic Symbol Test Condition 3 Phase Peak Reverse Current *1 Rectification Diode Peak Reverse Voltage *1 Peak OFF-State Current Peak Reverse Current Peak On-State Voltage IR VF IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Voltage to Non-Trigger Critical Rate Of Rise Of Off-State Voltage VGD dv/dt Switch Thyristor Tj=150°C, VRM=VRRM IF=35A Tj=125°C, VDM=VDRM Tj=125°C, VRM=VRRM IT=35A Tj=-40°C VD=6V Tj=25°C IT=1A Tj=125°C Tj=-40°C VD=6V Tj=25°C IT=1A Tj=125°C Tj=125°C, VD=2/3VDRM Unit V A A2s A/µs V A A2s A/µs W A V V A W V A W V A °C V M.ohm N·m Min. Typ. Max. Unit 0.25 500 - 10 1.40 50 50 1.30 200 100 50 40 25 20 - mA µA mA V mA V V V/µs TENTATIVE Turn-Off Time Switch Thyristor Inverter IGBT Brake IGBT Snubber Diode Turn-On Time Delay Time Rise Time Latching Current Holding Current Collector-Emitter Out-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-On Time Switching Time Fall Time Turn-Off Time Peak Forward Voltage Reverse Recovery Time Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Peak Forward Voltage Reverse Recovery Time tq tgt td tr IL IH ICES IGES VCE(sat) VCE(th) Cies tr ton tf toff VF trr ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff VF trr Tj=125°C, VD=2/3VDRM VRM=100V, dv/dt=20V/µs -di/dt=20A/µs Tj=25°C, VD=2/3VDRM IG=200mA -diG/dt=0.2A/µs VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 12 ohm RG= 20 ohm VGE= +/- 15V IF=50A IF=50A,VGE=-10V, di/dt=75A/µs VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=25A,VGE=15V VCE=5V,IC=25mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 24 ohm RG= 91 ohm VGE= +/- 15V IF=15A IF=15A, di/dt=50A/µs - 100 - 4.0 3.0 - 6 2 4 100 80 1.9 4200 0.25 0.40 0.25 0.80 1.9 0.2 2.0 2500 0.3 0.5 0.3 0.80 - 1.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 2.4 0.3 1.0 1.0 3.3 7.0 0.6 1.0 0.5 1.5 2.5 0.3 - 5.00 0.97 0.27 3375 3420 10 - Min. Typ. Max. Unit - - 0.75 0.60 0.40 0.70 0.67 °C/W µs mA mA µA V V pF µs V µs mA µA V V pF µs V µs *1: per 1arm ELECTRICAL CHARACTERISTICS (Tc=25°C Unless otherwise noted) 25°C 75°C 125°C 25°C/50°C 25°C/85°C Resistance Thermister B-Value Thermal Time Constant THERMAL CHARACTERISTICS Characteristic Thermal Impedance Rth(j-c) Junction to Case 3 Phase Rectification Diode Switch Thyristor Inverter IGBT Inverter Free Wheeling Diode Brake IGBT Test Condition Per :1 arm. k. ohm K s TENTATIVE PVD75-12 OUTLINE DRAWING (Dimensions in mm) CIRCUIT