10A 800V TO-262 THYRISTOR Type：TSN10A80 Cnstruction : Planner Structure Reverse Conducting Futures : High VDRM & Permissonable di/dt Application : Stater for HID Lump Bullust Circuit weight : 1.45g Absolute Maximum Ratings Rating Repetitive Peak off-state Voltage Symbol VDRM Repetitive Peak On-State Current * ITRM Repetitive Peak Forward Current * IFRM Critical Rate of Rise of Off-State Voltage Permissible Rate of Down of On-State Current * di/dt PeakGate Power PGM Average Gate Power PG(AV) Conditions Tj=25°C Tc ≤ 100 °C, VDM ≤ 400V IG ≥ 80mA, dig/dt ≥ 0.5A/µs tw ≤ 1.0µs，di/dt ≤ 1500A/µs duty ≤ 0.005℅ Tc ≤ 100 °C, tw ≤ 1.0µs duty ≤ 0.005℅ Tc ≤ 100 °C, VDM ≤ 400V IG ≥ 80mA, dig/dt ≥ 0.5A/µs ITM ≤ 500A, tw ≤ 1.0µs 50Hz, 1min., without CoolingFin Max. Rated Value 800 Unit V 500 A 500 A 1500 A/µs 5 W 0.5 W 2 A f ≥ 50Hz, duty ≤ 10℅ f ≥ 50Hz, duty ≤ 10℅ PeakForward Gate Current IGM PeakForward Gate Voltage VGM 10 V PeakReverse Gate Voltage VRGM 5 V Operating Junction Temperature Range Tjw -40 to +125 °C Storage Temperature Range Tstg -40 to +150 °C * notes : Test Circuit & Current Wave Form R SW L 0.5•ITM ITM 0.1•ITM VDM t C Thyristor Sample tw di/dt = 0.4 • ITM/t Electrical Characteristics (Tj = 25 °C) Characteristics Symbol Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM = VDRM 100 µA Peak On-State Voltage VTM ITM=20A 1.50 A Peak Forward Voltage VFM IFM=10A 1.50 A Gate Trigger Current IGT 20 mA 1.0 V VDM=6V, RL=10ohm Gate Trigger Voltage VGT HoldingCurrent IH IG=50mA, ITM=1A 7 mA LatchingCurrent IL IG=50mA 13 mA Thermal Resistance Rth(j-c) Junction to Case 5 °C/W Thermal Resistance Rth(j-a) Junction to Ambient 80 °C/W TSN10A08 OUTLINE DRAWING (Dimension: mm)