NTE299 Silicon NPN Transistor RF Power Amp, Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperatur Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 75 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = ∞ 35 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 – – V µA Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 10 DC Current Gain hFE VCE = 10V, IC = 0.1A 10 70 300 Power Output PO VCC = 12V, f = 27MHz, PIN = 75mW, IC < 166mA 1.2 1.4 – .380 (9.56) .180 (4.57) .132 (3.35) Dia C .500 (12.7) .325 (9.52) 1.200 (30.48) Ref .070 (1.78) x 45° Chamf .300 (7.62) .050 (1.27) .400 (10.16) Min C .100 (2.54) B E .100 (2.54) W