NTE NTE53

NTE53
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
115V and 220V line–operated switch–mode appliations.
Applications:
D Switching Regulators
D PWM Inverters and Motor Controls
D Deflection Circuits
D Solenoid and Relay Drivers
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Total Device Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperatur Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperatur Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . +275°C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Charactetristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCEO(sus) IC = 100mA, IB = 0
400
–
–
V
VCEX(sus) IC = 8A, Vclamp = 450V, TC = +100°C
450
–
–
V
300
–
–
V
VCEV = 850V, VBE(off) = 1.5V
–
–
1.0
mA
VCEV = 850V, VBE(off) = 1.5V,
TC = +100°C
–
–
4.0
mA
ICER
VCE = 850V, RBE = 50Ω, TC = +100°C
–
–
5.0
mA
IEBO
VEB = 9V, IC = 0
–
–
1.0
mA
IS/b
VCE = 100V, t = 1.0s (non–repetitive)
0.2
–
–
A
hFE
VCE = 2V, IC = 5A
12
–
60
VCE = 2V, IC = 10A
6
–
30
IC = 10A, IB = 2A
–
–
1.5
V
IC = 10A, IB = 2A, TC = +100°C
–
–
2.5
V
IC = 15A, IB = 3A
–
–
5.0
V
IC = 10A, IB = 2A
–
–
1.6
V
IC = 10A, IB = 2A, TC = +100°C
–
–
1.6
V
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
IC = 15A, Vclamp = 300V, TC = +100°C
Collector Cutoff Current
Emitter Cutoff Current
ICEV
Second Breakdown
Second Breakdown Collector
Current with Base Forward Bias
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
fT
Cob
VCE = 10V, IC = 500mA, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
6
–
28
MHz
125
–
500
pF
–
–
0.05
µs
–
–
1.0
µs
Switching Characteristics (Resistive Load)
Delay Time
td
Rise Time
tr
Storage Time
ts
–
–
4.0
µs
Fall Time
tf
–
–
0.7
µs
–
2.0
–
µs
0.09
–
–
µs
–
–
5.0
µs
–
–
1.5
µs
VCC = 250V, IC = 10A, IB1 = IB2 =2A,
tp = 300µs,
µ Duty Cycle ≤ 2%
Switching Characteristics (Inductive Load, Clamped)
Storage Time
tsv
Fall Time
tfi
Storage Time
tsv
Fall Time
tfi
IC = 10A peak, Vclamp = 450V, IB1 = 2A,
VBE(off) = 5V
IC = 10A peak, Vclamp = 450V, IB1 = 2A,
VBE(off) = 5V, TJ = +100°C
°
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case