NTE NTE5621

NTE5621 thru NTE5627
TRIAC – 10 Amp
Description:
The NTE5621 through NTE5627 TRIACs are designed primarily for full–wave AC control applications, such as light dimmers, motor controls, heating controls, and power supplies; or wherever full–
wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate
triggering.
Features:
D All Diffused and Passivated Junctions for Greater Parameter Uniformity and Stability
D Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation
and Durability.
D Gate Triggering Guaranteed in Two Modes
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (TJ = +100°C, Note 2), VDRM
NTE5621 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
NTE5622 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5623 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5627 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
On–State Current RMS (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Surge Current (One Full Cycle, 60Hz, TJ = –40° to +100°C), ITSM . . . . . . . . . . . . . . . . . . 100A
Circuit Fusing Considerations (TJ = –40° to +100°C, t = 1.0 to 8.3ms), I2t . . . . . . . . . . . . . . . . 40A2s
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Mounting Torque (6–32 Screw, Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12in. lb.
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Thermal Resistance, Case–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Note 1. NTE5622 and NTE5627 are discontinued devices and no longer available.
Note 2. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 3. Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does
not appreciably lower case–to–sink thermal resistance. Anode lead and heatsink contact
pad are common.
Note 4. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +230°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Peak Blocking Current (Either Direction)
(Rated VDRM, TJ = 100°C, Gate Open)
IDRM
On–State Voltage (Either Direction)
(ITM = 14A Peak)
VTM
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12V, RL = 100Ω)
MT2 (+), G (+); MT2 (–), G (–)
IGT
Gate Trigger Voltage (Continuous DC)
(Main Terminal Voltage = 12V, RL = 100Ω)
MT2 (+), G (+); MT2 (–), G (–)
VGT
Gate Trigger Voltage (Continuous DC – All Modes)
(Main Terminal Voltage = Rated VDRM, RL = 100Ω, TJ = +100°C)
VGD
IH
Turn–On Time
(ITM = 14A, IGT = 100mA)
ton
Blocking Voltage Application Rate at Commutation
(At VDRM, TJ = +75°C, Gate Open)
.143 (3.65) Dia Thru
.668
(17.0)
Max
MT1
Max Unit
–
–
2
–
1.3
1.8
mA
V
mA
–
50
V
–
0.9
2.0
0.2
–
–
V
mA
–
–
50
–
1.5
–
–
5
–
µs
dv/dt
.530 (13.4) Max
Gate
.655
(16.6)
Max
.166 (4.23)
Typ
–
Holding Current (Either Direction)
(Main Terminal Voltage = 12Vdc, Gate Open, IT = 100mA)
Heat Sink Contact
Area (Bottom)
Min
MT2 (Heat Sink Area)
.150 (3.82) Max
V/µs