NTE388 (NPN) & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area: 2A @ 80V D High DC Current Gain: hFE = 15 Min @ IC = 8A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70°C/W Note 1. Matched complementary pairs are available upon request (NTE68MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other. Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 250 – – V OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 3 Collector Cutoff Current Emitter Cutoff Current ICEX VCE = 250V, VBE(off) = 1.5V – – 250 µA ICEO VCE = 200V, IB = 0 – – 500 µA IEBO VEB = 5V, IC = 0 – – 500 µA IS/b VCE = 50V, t = 0.5s (non–repetitive) 5 – – µA VCE = 80V, t = 0.5s (non–repetitive) 2 – – µA VCE = 4V, IC = 8A 15 – 60 VCE = 4V, IC = 16A 5 – – IC = 8A, IB = 800mA – – 1.4 V IC = 16A, IB = 3.2A – – 4.0 V VCE = 4V, IC = 8A – – 2.2 V VCE = 10V, IC = 1A, ftest = 1MHz 4 – – MHz VCB = 10V, IE = 0, ftest = 1MHz – – 500 pF Second Breakdown Second Breakdown Collector Current with Base Forward Bias ON Characteristics DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter On Voltage VBE(on) Dynamic Characteristics Current Gain–Bandwidth Product fT Output Capacitance Cob Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case