NTE90 (NPN) & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier Absolute Maximum Ratings: (TA = +25°C) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 120 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 120 – – V – – 0.5 µA Collector Cutoff Current ICBO VCB = 100V, IB = 0 DC Current Gain hFE1 VCE = 12V, IC = 2mA 400 – 800 hFE2 VCE = 12V, IC = 10mA 125 – – VBE VCE = 12V, IC = 2mA – – 0.75 V VCE(sat) IC = 10mA, IB = 1mA – – 0.2 V fT VCE = 12V, IC = 5mA – 350 – MHz VCB = 25V, IE = 0, f = 1MHz – 1.6 – pF Base–Emitter Voltage Collector–Emitter Saturation Voltage Current Gain–Bandwidth Product Collector Output Capacitance Cob .339 (8.62) Max Seating Plane .026 (.66) Dia Max .512 (13.0) Min E C B .100 (2.54) .200 (5.08) Max .240 (6.09) Max