MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com 30 VOLTS, 2.0 AMPERES NPN TRANSISTOR Compliant COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 1.0 A ICM 2.0 A Symbol Max Unit 310 2.5 mW mW/°C 403 °C/W 710 5.7 mW mW/°C Collector Current − Continuous Collector Current − Peak 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) @TA = 25°C Derate above 25°C PD RqJA PD Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 176 °C/W Total Device Dissipation (Single Pulse < 10 s) PDsingle 575 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad 1 SOT−23 (TO−236) CASE 318 STYLE 6 2 MARKING DIAGRAM N3 M G G 1 N3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT489LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 1 Publication Order Number: MMBT489LT1/D MMBT489LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 30 − 50 − 5.0 − − 0.1 − 0.1 − 0.1 300 300 200 − 900 − − − − 0.200 0.125 0.075 − 1.1 − 1.1 100 − − 15 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = 30 Vdc) ICES Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 50 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 mA, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz fT Output Capacitance (f = 1.0 MHz) Cobo V V V MHz pF 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% 1.0 1.0 0.9 0.7 0.8 0.7 IC = 1 A 0.6 VCE (V) VCE (V) 0.9 IC = 2 A 0.8 0.5 0.4 0.3 0 0.5 Ic/Ib = 100 0.4 0.3 IC = 500 mA 0.2 0.1 0.6 0.1 IC = 100 mA 0.001 Ic/Ib = 10 0.2 0.01 Ib (A) 0.1 0 0.2 0.001 0.01 0.1 Ic (A) Figure 1. VCE versus Ib Figure 2. VCE versus Ic http://onsemi.com 2 1 2 MMBT489LT1G 800 700 1.2 VCE = 5 V VCE = 5 V +125°C 1.0 600 VBE(on) (V) +25°C hFE 500 400 300 −55°C −55°C 0.8 0.6 0.4 +25°C +125°C 200 0.2 100 0 0.001 0.01 0.1 1 0 2 0.001 0.01 Ic (A) Figure 3. hFE versus Ic 2 IC COLLECTOR CURRENT (A) 10 1.0 Ic/Ib = 10 0.8 VBE (V) 1 Figure 4. VBE(on) versus Ic 1.2 Ic/Ib = 100 0.6 0.4 0.2 0 0.1 Ic (A) 0.001 0.01 0.1 1 1 1 ms 0.01 2 10 ms 100 ms 0.1 1s SINGLE PULSE Tamb = 25°C 0.1 1 Ic (A) 0.2 100 VCE (V) Figure 5. VBE(sat) versus Ic 0.5 dc 10 Figure 6. Safe Operating Area 0.1 1.0E+00 0.05 0.02 D = 0.01 Rthja , (t) 1.0E-01 1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 7. Normalized Thermal Response http://onsemi.com 3 10 100 1000 MMBT489LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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