OSA 190282

ORANGE
Item No.: 190282
1.
This specification applies to AlInGaP / GaAs LED Chips
2.
Structure
2.1
Mesa structure
2.2
Electrodes
3.
Outlines (dimensions in microns)
p-side (anode)
n-side (cathode)
Au alloy or Al
Au alloy
p-Electrode
Epitaxy AlInGaP
235
110
250
n-Substrate GaAs
235
n-Electrode
Wire-bond contacts can also be square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Symbol
Conditions
VF
IR
IF = 20 mA
VR = 5 V
Forward voltage
Reverse current
min
typ
max
Unit
2,10
2,40
10
V
Luminous intensity *
IV
IF = 10 mA
55,0
dom. wavelength
IF = 20 mA
625
λD
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
µA
mcd
nm
Packing
Dice on adhesive film with 1) wire-bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
IV typ
min
max
Quantity
© 2004
OSA Opto Light GmbH — Tel. +49-(0)30-65 76 26 83 — Fax +49-(0)30-65 76 26 81 — [email protected]