PANJIT SB10100LFCT

SB10100LFCT
DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER
VOLTAGE
100 Volts
CURRENT
10 Ampers
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : ITO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.055 ounces, 1.5615 grams
.027(.67)
.022(.57)
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
VRRM
100
V
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.1)
per device
per diode
I F(AV)
10
5
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
per diode
I FSM
125
A
Typ i c a l the r ma l r e s i s ta nc e
per diode
R JC
5
Isolation voltage from terminal to heatsink t=1mm
VAC
1500
Operating junction and storage temperature range
TJ,TSTG
-55 to + 150
O
C / W
V
o
C
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
VBR
Instantaneous forward voltage per
diode (1)
VF
Reverse current per diode (2)
IR
TEST CONDITIONS
I R=1mA
MIN.
TYP.
MAX.
UNIT
103
120
-
V
I F=1A
I F=5A
TA=25oC
-
0.45
0.79
0.5
-
V
I F=1A
I F=5A
TA=125oC
-
0.40
0.59
0.46
-
V
-
8
-
A
-
16
-
100
30
A
mA
VR=70V
VR=100V
TA=25oC
TA=125oC
Note.1.Pulse test : 300s pulse width, 1% duty cycle
2.Pulse test used to minimize Self-Heating Effect
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.4-AUG.6.2009
PAGE . 1
SB10100LFCT
10000
Junction Capacitance (pF)
Average Forward Current (A)
12
Resistive or Inductive Load
10
8
6
4
2
0
0
25
75
50
T J =25 oC
f=1.0MHz
Vsig=50mVp-p
1000
100
10
0.1
100 125 150 175
1
o
Case Temperature ( C)
10
100
Reverse Voltage (V)
Figure 1. Forward Current
Derating Curve
Figure 2. Typical Junction
Capacitance
100
100
10
Instantaneous Reverse
Current (mA)
Instantaneous Forward
Current (A)
o
T A =125 C
o
T A =100 C
1
o
T A =75 C
0.1
o
T A =25 C
0.01
0.0
REV.0.4-AUG.6.2009
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
T A =100 oC
1
0.1
T A =25 oC
0.01
0.001
10 20
30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Instantaneous
Forward Characteristics Per Diode
Figure 4. Typical Reverse
Characteristics Per Diode
PAGE . 2