DOMINANT Semiconductors Innovating Illumination DomiLED TM DATA SHEET: DomiLEDTM AlInGaP : DDx-xJS TM Synonymous with function and performance, the DomiLED series is perfectly suited for a variety of cross-industrial applications due to its small package outline, durability and superior brightness. TM Features: > > > > > > High brightness surface mount LED. 120° viewing angle. Small package outline (LxWxH) of 3.2 x 2.8 x 1.8mm. Qualified according to JEDEC moisture sensitivity Level 2. Compatible to IR reflow soldering. Environmental friendly; RoHS compliance. Applications: > Automotive: interior applications, eg: switches, telematics, climate control system, dashboard, etc. > Consumer Appliances: LCD illumination as in PDAs, LCD TV. > Communication: indicator and backlight in mobilephone. > Display: full color display video notice board. > Industry: white goods (eg: Oven, microwave, etc.). © 2005 DomiLED is a trademark of DOMINANT Semiconductors. All rights reserved. Product specifications are subject to change without notice. 1 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Part Ordering Number DDH-CJS-PQ2-1 • DDH-CJS-P1 Chip Technology / Color Viewing Angle˚ AllnGaP 120 Hyper-red, 640nm Luminous Intensity @ IF = 20mA IV (mcd) 45.0 - 112.5 45.0 - 56.0 • DDH-CJS-P2 56.0 - 71.5 • DDH-CJS-Q1 71.5 - 90.0 • DDH-CJS-Q2 90.0 - 112.5 DDS-CJS-QR2-1 • DDS-CJS-Q1 AllnGap 120 Super-red, 632nm 71.5 - 180.0 71.5 - 90.0 • DDS-CJS-Q2 90.0 - 112.5 • DDS-CJS-R1 112.5 - 140.0 • DDS-CJS-R2 140.0 - 180.0 DDS-SJS-QR2-1 71.5 - 180.0 • DDS-SJS-Q1 71.5 - 90.0 • DDS-SJS-Q2 90.0 - 112.5 • DDS-SJS-R1 112.5 - 140.0 • DDS-SJS-R2 140.0 - 180.0 DDR-CJS-RS2-1 • DDR-CJS-R1 AllnGap 120 Red, 625nm 112.5 - 285.0 112.5 - 140.0 • DDR-CJS-R2 140.0 - 180.0 • DDR-CJS-S1 180.0 - 224.0 • DDR-CJS-S2 224.0 - 285.0 DDR-SJS-RS2-1 112.5 - 285.0 • DDR-SJS-R1 112.5 - 140.0 • DDR-SJS-R2 140.0 - 180.0 • DDR-SJS-S1 180.0 - 224.0 • DDR-SJS-S2 224.0 - 285.0 DDR-TJS-TU2-1 TS AllnGap • DDR-TJS-T1 Red, 625nm 120 285.0 - 715.0 285.0 - 335.0 • DDR-TJS-T2 335.0 - 450.0 • DDR-TJS-U1 450.0 - 560.0 • DDR-TJS-U2 560.0 - 715.0 DDA-CJS-RS2-1 • DDA-CJS-R1 AllnGap 120 Amber, 615nm 112.5 - 285.0 112.5 - 140.0 • DDA-CJS-R2 140.0 - 180.0 • DDA-CJS-S1 180.0 - 224.0 • DDA-CJS-S2 224.0 - 285.0 DDA-SJS-ST2-1 180.0 - 450.0 • DDA-SJS-S1 180.0 - 224.0 • DDA-SJS-S2 224.0 - 285.0 • DDA-SJS-T1 285.0 - 355.0 • DDA-SJS-T2 355.0 - 450.0 2 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Part Ordering Number DDO-CJS-RS2-1 • DDO-CJS-R1 Chip Technology / Color Viewing Angle˚ AllnGap 120 Orange, 605nm Luminous Intensity @ IF = 20mA IV (mcd) 112.5 - 285.0 112.5 - 140.0 • DDO-CJS-R2 140.0 - 180.0 • DDO-CJS-S1 180.0 - 224.0 • DDO-CJS-S2 224.0 - 285.0 DDO-SJS-ST2-1 180.0 - 450.0 • DD0-SJS-S1 180.0 - 224.0 • DD0-SJS-S2 224.0 - 285.0 • DD0-SJS-T1 285.0 - 355.0 • DD0-SJS-T2 355.0 - 450.0 DDY-CJS-RS2-1 • DDY-CJS-R1 AllnGap 120 Yellow, 587nm 112.5 - 285.0 112.5 - 140.0 • DDY-CJS-R2 140.0 - 180.0 • DDY-CJS-S1 180.0 - 224.0 • DDY-CJS-S2 224.0 - 285.0 DDY-SJS-ST2-1 180.0 - 450.0 • DDY-SJS-S1 180.0 - 224.0 • DDY-SJS-S2 224.0 - 285.0 • DDY-SJS-T1 285.0 - 355.0 • DDY-SJS-T2 355.0 - 450.0 DDY-TJS-TU2-1 • DDY-TJS-T1 TS AllnGaP 120 Yellow, 590nm 285.0 - 715.0 285.0 - 355.0 • DDY-TJS-T2 355.0 - 450.0 • DDY-TJS-U1 450.0 - 560.0 • DDY-TJS-U2 560.0 - 715.0 DDG-CJS-PQ2-1 • DDG-CJS-P1 AllnGap 120 Green, 572nm 45.0 - 112.5 45.0 - 56.0 • DDG-CJS-P2 56.0 - 71.5 • DDG-CJS-Q1 71.5 - 90.0 • DDG-CJS-Q2 90.0 - 112.5 DDG-SJS-QR2-1 71.5 - 180.0 • DDG-SJS-Q1 71.5 - 90.0 • DDG-SJS-Q2 90.0 - 112.5 • DDG-SJS-R1 112.5 -140.0 • DDG-SJS-R2 140.0 - 180.0 DDP-SJS-LM2-1 • DDP-SJS-L1 AllnGap 120 Pure Green, 560nm 11.2 - 28.5 11.2 - 14.0 • DDP-SJS-L2 14.0 - 18.0 • DDP-SJS-M1 18.0 - 22.4 • DDP-SJS-M2 22.4 - 28.5 3 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Part Ordering Number DDP-SJS-MN2-1 • DDP-SJS-M1 Chip Technology / Color Viewing Angle˚ AllnGap 120 Luminous Intensity @ IF = 20mA IV (mcd) 18.0 - 45.0 18.0 - 22.4 Pure Green, 560nm • DDP-SJS-M2 22.4 - 28.5 • DDP-SJS-N1 28.5 - 35.5 • DDP-SJS-N2 35.5 - 45.0 NOTE 1. All part number above comes in a quantity of 2000 units per reel. 2. Other luminous intensity groups are also available upon request. 3. Luminous intensity is measured with an accuracy of ± 11%. 4. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. 5. An optional Vf binning is also available upon request. Binning scheme is as per following table. 4 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Wavelength Grouping Color Group Wavelength distribution (nm) DDH; Hyper-red Full 636 - 646 DDS; Super-red Full 625 - 640 DDR-CJ, -SJ; Red (AS) Full 620 - 630 DDR-TJ; Red (TS) Full 620 - 635 DDA; Amber Full 610 - 621 W 610 - 615 X 615 - 621 Full 600 - 612 W 600 - 603 X 603 - 606 Y 606 - 609 Z 609 - 612 Full 582 - 594 W 582 - 585 X 585 - 588 Y 588 - 591 Z 591 - 594 DDO; Orange DDY; Yellow DDG; Green DDP; Pure Green Full 564.5 - 576.5 W 564.5 - 567.5 X 567.5 - 570.5 Y 570.5 - 573.5 Z 573.5 - 576.5 Full 552.5 - 564.5 W 552.5 - 555.5 X 555.5 - 558.5 Y 558.5 - 561.5 Z 561.5 - 564.5 Dominant wavelength is measured with an accuracy of ± 1 nm. 5 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Electrical Characteristics at Ta=25˚C Vf @ If = 20mA Part Number Vr @ Ir = 10uA Typ. (V) Max. (V) Min. (V) 1.9 2.3 12 1.8 2.3 12 2.1 2.6 12 DDH-CJS, DDS-CJS, DDR-CJS, DDA-CJS, DDO-CJS, DDY-CJS, DDG-CJS DDS-SJS, DDR-SJS, DDA-SJS, DDO-SJS, DDY-SJS, DDG-SJS, DDP-SJS DDR-TJS, DDY-TJS Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Vf Binning (Optional) Vf Bin @ 20mA Forward Voltage (V) 01 1.55 … 1.85 02 1.85 … 2.15 03 2.15 … 2.45 04 2.45 … 2.75 Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Please consult sales & marketing for special part number to incorporate Vf binning. Absolute Maximum Ratings Maximum Value Unit 30 mA DDx-SJS/DDx-TJS : 1000 mA DDx-CJS : 500 DC forward current Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005) Reverse voltage 12 V ESD threshold (HBM) 2 KV 125 ˚C Operating temperature -40 … +100 ˚C Storage temperature -40 … +100 ˚C 75 mW - Junction / ambient, Rth JA 500 K/W - Junction / solder point, Rth JS (Mounting on FR4 PCB, pad size >= 16 mm2 per pad) 280 K/W LED junction temperature Power dissipation (at room temperature) Thermal resistance 6 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Characteristics (Ta = 25˚C) Symbol O dom (typ) IF = 20mA; 0 ˚C <= T <= 100 ˚C Temperature coefficient of Temperature coefficient of VF (typ) IF = 20mA; 0 ˚C <= T <= 100 ˚C Temperature coefficient of IV (typ) IF = 20mA; 0 ˚C <= T <= 100 ˚C TC Part Number O dom (typ) TCV TCIV 7 Value DDR-CJS, DDR-SJS 0.03 DDS-CJS, DDS-SJS 0.01 DDO-CJS, DDO-SJS 0.04 DDY-CJS, DDY-SJS 0.09 DDA-CJS, DDA-SJS 0.05 DDG-CJS, DDG-SJS 0.10 DDH-CJS 0.01 DDR-TJS 0.02 DDY-TJS 0.09 DDP-SJS 0.10 DDR-CJS, DDR-SJS -4.3 DDS-CJS, DDS-SJS -2.3 DDO-CJS, DDO-SJS -1.6 DDY-CJS, DDY-SJS -3.3 DDA-CJS, DDA-SJS -3.2 DDG-CJS, DDG-SJS -0.2 DDH-CJS -1.6 DDR-TJS -2.0 DDY-TJS -1.6 DDP-SJS -0.2 DDR-CJS, DDR-SJS -0.7 DDS-CJS, DDS-SJS -0.4 DDO-CJS, DDO-SJS -1.5 DDY-CJS, DDY-SJS -2.3 DDA-CJS, DDA-SJS -1.1 DDG-CJS, DDG-SJS -0.8 DDH-CJS -0.3 DDR-TJS -1.8 DDY-TJS -5.1 DDP-SJS -0.4 Unit nm / K mV / K mcd / K 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Forward Current Vs Forward Voltage 30 2.2 2 25 1.8 20 Forward Current, mA 1.6 Relative Intensity Relative Intensity; Normalized at 20mA Relative Luminous Intensity Vs Forward Current 1.4 1.2 1 0.8 0.6 0.4 0.2 15 5 0 0 0 10 20 30 40 50 60 1.2 1.4 1.8 2 2.2 2.4 2.6 Forward Voltage, V Maximum Current Vs Temperature Relative Intensity Vs Wavelength 1 Yellow 0.9 Relative Intensity 25 20 15 10 Orange Green 0.8 Amber 0.7 Red Pure Green 0.6 0.5 0.4 Super Red 0.3 Hyper Red 0.2 5 0.1 0 0 0 10 20 30 40 50 60 70 80 90 100 500 600 700 800 Wavelength, nm Ambient Temperature Radiation Pattern Allowable Forward Current Vs Duty Ratio (Ta= 25 Deg C) 30° 10000 Allowable Forward Current 1.6 Forward Current, mA 30 Forward Current, mA TS AlInGaP 10 35 Forward Current, mA AS AlInGaP 20° 10° 0° 1.0 40° DDx-SJS/DDx-TJS 0.8 1000 100 DDx-CJS 50° 0.6 60° 0.4 70° 0.2 80° 10 1 10 90° 100 0 Duty Ratio, % 8 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination DomiLED • AllnGap : DDx-xJS Package Outlines TM 9 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Recommended Solder Pad 10 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Taping and orientation • Reels come in quantity of 2000 units. • Reel diameter is 180 mm. 11 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Packaging Specification 12 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Packaging Specification Moisture sensitivity level Barcode label DOMINANT Semiconductors ROHS Compliant LOT NO : lotno PB Free PART NO : partno QTY : qty S/N : xxx D/C: xxxx GROUP : group Reel Moisture absorbent material + Moisture indicator The reel, moisture absorbent material and moisture indicator are sealed inside the moisture proof foil bag Average 1pc DomiLED/Multi DomiLED 1 completed bag (2000pcs) 0.034 0.034 190 ± 10 190 10 Weight Weight(gram) (gram) Cardboard Box DOMINANT TM Semiconductors For DomiLED TM Cardboard Box Size Dimensions (mm) Empty Box Weight (kg) Reel / Box Quantity / Box (pcs) Small 300 x 250 x 250 0.58 15 reels MAX 30,000 MAX Large 416 x 516 x 476 1.74 55 reels MAX 110,000 MAX 13 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Recommended Sn-Pb IR-Reflow Soldering Profile Classification Reflow Profile (JEDEC J-STD-020C) 275 235-240˚C 10-30s 250 225 Ramp-up 3˚C/sec max. Temperature (˚C) 200 175 183˚C 150 60-150s 125 Rampdown 6˚C/sec max. 100 75 Preheat 60-120s 50 360s max 25 0 50 100 150 200 Recommended Pb-free Soldering Profile Classification Reflow Profile (JEDEC J-STD-020C) 300 255-260˚C 10-30s 275 250 Temperature (˚C) Ramp-up 3˚C/sec max. 217˚C 225 200 60-150s 175 150 125 Rampdown 6˚C/sec max. 100 75 Preheat 60-180s 50 25 480s max 0 50 100 150 200 Time (sec) 14 07/06/2007 V10.0 DOMINANT TM AllnGap : DDx-xJS Semiconductors Innovating Illumination Revision History Page Subjects Date of Modification New Format 06 Sept 2005 7 Graph: Maximum Current Vs Temperature. When Ambient Temperature=100o; Forward Current=15mA 06 Mar 2006 7 Add Characteristics table 07 June 2007 8 Add Allowable Forward Current Vs Duty Ratio Graph 07 June 2007 NOTE All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT Semiconductors does not assume any liability arising out of the application or use of any product described herein. DOMINANT Semiconductors reserves the right to make changes at any time without prior notice to any products in order to improve reliability, function or design. DOMINANT Semiconductors products are not authorized for use as critical components in life support devices or systems without the express written approval from the Managing Director of DOMINANT Semiconductors. 15 07/06/2007 V10.0 DOMINANT TM Semiconductors Innovating Illumination AllnGap : DDx-xJS About Us DOMINANT Semiconductors is a dynamic Malaysian Corporation that is among the world’s leading SMT LED Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certified quality assurance acclaim, DOMINANT’s extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Semiconductors can be found on the Internet at http://www.dominant-semi.com. Please contact us for more information: Head Quarter DOMINANT Semiconductors Sdn. Bhd. Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia Tel: (606) 283 3566 Fax: (606) 283 0566 E-mail: [email protected] DOMINANT China Sales Office DOMINANT Semiconductors (Shenzhen) Co. Ltd. 24BC Newbaohui Building, No. 1007 West Nanhai Blvd., Nanshan, Shenzhen, China P.C. 518054 Tel: +86 (755) 86031785 / +86 (755) 86031786 Fax: +86 (755) 86031789 E-mail: [email protected] DOMINANT Korea Sales Office DOMINANT Semiconductors Korea Inc. 902 Sunil Technopia, 440 Sangdaewon-dong, Jungwon-gu, Sungnam-si, Kyunggi-do, Korea 462726 Tel: 82-31-777-3978 Fax: 82-31-777-3976 E-mail: [email protected] DOMINANT Semiconductors Innovating Illumination TM