polyfet rf devices LB501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 175.0 Watts Push - Pull Package Style LB "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 440 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.44 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 23.0 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 175.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 13 50 Load Mismatch Tolerance 5:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current Igss Gate Leakage Current Vgs Gate Bias for Drain Current gM Forward Transconductance Rdson Saturation Resistance Idsat MIN TYP MAX TEST CONDITIONS V Ids = 1.0 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0V Vgs = 30V 7 V Ids = 0.30 A, Vgs = Vds 65 1 UNITS 0.25 mA, Vgs = 0V 4.8 Mho Vds = 10V, Vgs = 5V 0.30 Ohm Vgs = 20V, Ids =13.00 A Saturation Current 30.00 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 150.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 7.5 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 100.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LB501 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L 5 1 D IE L B 5 0 1 F = 5 0 0 M H z ; V d s = 2 8 V d c , Id q = 1 . 2 A 210 17 180 16 150 120 14 90 13 Gain 60 30 Ciss 15 Pout 100 Coss 10 12 Crss 11 E ffic ie n c y @ 180W = 5 5 % 0 10 0 4 8 12 P i n i n W a tts 16 C A P A C IT A N C E 1000 1 20 0 5 IV CURVE 10 15 20 V D S IN V O L T S 25 30 ID & GM VS VGS L 5 B 1 D IE L5B 1 DIE ID , G M v s V G 100 30 25 ID IN AMPS 20 Id 15 10 10 gM 5 G 0 VDS=10V 0 vg=2v 2 4 Vg=4v 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 vg=10v Zin Zout 18 20 vg=12v 1 0 2 4 6 8 V g s in V o lts 10 12 14 PACKAGE DIMENSIONS IN INCHES LB501 Vdd=28V Idq=800mA Pout=160W Freq(MHz) 500 3.1 Zin -j0.6 3.6 Zout +j2.6 Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 07/17/2003 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com