polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 300.0 Watts Push - Pull Package Style LR "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 465 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.38 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 28.0 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 300.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 13 50 Load Mismatch Tolerance 5:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F = 350 MHz % Idq = 0.80 A, Vds = 28.0 V, F = 350 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F = 350 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current Igss Gate Leakage Current Vgs Gate Bias for Drain Current gM Forward Transconductance Rdson Saturation Resistance Idsat MIN TYP MAX TEST CONDITIONS V Ids = 1.0 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0V Vgs = 30V 5 V Ids = 0.30 A, Vgs = Vds 65 2 UNITS 0.25 mA, Vgs = 0V 7.2 Mho Vds = 10V, Vgs = 5V 0.15 Ohm Vgs = 20V, Ids =16.00 A Saturation Current 50.00 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 200.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 10.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 135.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 02/27/2006 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LR301 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LR301 F req=350M H z ; V d s =28V dc, Idq=.8A L 3 1 D IE 17 360 320 C A P A C IT A N C E 1000 Ciss 16 280 Pout 15 240 100 Coss 14 200 Gain 160 13 10 120 Crss 12 80 E ffic ienc y @ 300W = 53% 40 11 0 1 10 0 6 12 18 P in in W a tts 24 0 30 5 IV CURVE 25 30 ID & GM VS VGS L3 1 DIE 50 10 15 20 V D S IN V O L T S L3 100 1 D IE ID , G M v s V G 45 40 ID IN AMPS 35 Id 30 25 10 20 15 gM 10 G 5 0 0 2 vg=2v 4 Vg=4v 6 8 10 12 VDS IN VOLTS Vg=6v Zin Zout vg=8v 14 16 18 vg=10v 20 vg=12v VDS=10V 1 0 2 4 6 8 V g s i n V o lts 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 02/27/2006 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com