LQA32T300C Qspeed™ Family 300 V, 32 A Q-Series Common-Cathode Diode Product Summary IF(AVG) per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 16 300 44 2.65 0.7 General Description A V nC A This device has the lowest QRR of any 300V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications • AC/DC and DC/DC output rectification • Output & freewheeling diodes • Motor drive circuits • DC-AC inverters Pin Assignment Features • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery TO-220AB A1 A2 Benefits • Increases efficiency • Eliminates need for snubber circuits • Reduces EMI filter component size & count • Enables extremely fast switching K RoHS Compliant Package uses Lead-free plating and Green mold compound. Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter VRRM Peak repetitive reverse voltage Conditions Per Diode, TJ = 150 °C, TC = 104°C Per Device, TJ = 150 °C, TC = 104°C 60 Hz, ½ cycle ½ cycle of t = 28 µs Sinusoid, TC = 25 °C IF(AVG) Average forward current IFSM IFSM TJ TSTG Non-repetitive peak surge current Non-repetitive peak surge current Maximum junction temperature Storage temperature Lead soldering temperature Leads at 1.6mm from case, 10 sec PD Power dissipation TC = 25 °C Rating Units 300 16 32 100 350 150 –55 to 150 300 V A A A A °C °C °C 65.8 W Rating Units 62 1.9 1.0 °C/W °C/W °C/W Thermal Resistance Symbol Resistance from: Conditions RθJA Junction to ambient RθJC Junction to case TO-220AB Per Diode Per Device www.powerint.com January 2011 LQA32T300C Electrical Specifications at TJ= 25 °C (unless otherwise specified) Symbol Parameter Conditions Min Typ Max Units - 0.45 1.6 1.4 50 25 1.9 - µA mA V V pF - 13 25 11.5 44 1.5 2.65 15 1.85 - ns ns nC nC A A - 0.7 0.7 - DC Characteristics IR Reverse current per diode VF Forward voltage per diode CJ Junction capacitance per diode VR = 300 V, TJ = 25 °C VR = 300 V, TJ = 125 °C IF = 16 A, TJ = 25 °C IF = 16 A, TJ = 150 °C VR = 10 V, 1 MHz Dynamic Characteristics tRR Reverse recovery time, per diode dIF/dt =200 A/µs VR=200, IF=16 A QRR Reverse recovery charge, per diode dIF/dt =200 A/µs VR=200, IF=16 A IRRM Maximum reverse recovery current, per diode dIF/dt =200 A/µs VR=200, IF=16 A TJ=25 °C TJ=125 °C TJ=25 °C TJ =125 °C TJ =25 °C TJ=125 °C S t Softness per diode= b dIF/dt =200 A/µs VR=200, IF=16 A TJ =25 °C TJ=125 °C ta Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-300.) VR D1 DUT L1 tRR IF dIF/dt ta 15V Pulse generator tb + Rg Q1 0 0.1xIRRM IRRM Figure 1. Reverse Recovery Definitions Figure 2. Reverse Recovery Test Circuit 2 www.powerint.com Rev 1.1 01/11 LQA32T300C Electrical Specifications at TJ= 25 °C (unless otherwise specified) 50 1.0 45 0.9 0.8 Tj=125C 35 30 Tj=125C 0.7 IF (A) IF (A) 40 25 Tj=25C 20 0.6 0.5 0.4 15 0.3 10 0.2 0.1 5 0 Tj=25C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.1 0.2 0.3 0.4 VF (V) 0.7 0.8 0.9 1.0 Figure 4. Typical IF vs VF 200 40 180 35 160 30 140 120 IF(AV) (A) Cj (pF) 0.6 VF (V) Figure 3. Typical IF vs VF 100 80 60 25 20 15 10 40 5 20 0 0 0 20 40 60 80 100 120 140 160 180 25 50 75 VR (V) 80 100 125 150 Case Temperature, T C (o C) Figure 5. Typical Cj vs VR Figure 6. DC Current Derating Curve 28 dI/dt=500A/us 26 70 dI/dt=200A/us 24 tRR (ns) 60 QRR (nC) 0.5 50 40 22 20 18 dI/dt=200A/us 30 dI/dt=500A/us 16 20 14 2 4 6 8 10 12 14 16 IF (A) Figure 7. Typical QRR vs IF at Tj=125 °C 18 2 4 6 8 10 12 14 16 18 IF (A) Figure 8. Typical tRR vs IF at Tj=125 °C 3 Rev 1.1 01/11 www.powerint.com LQA32T300C 80 70 60 IF (PEA K) (A ) P (W) 50 40 30 20 10 0 25 50 75 100 125 150 duty cycle=10% 60 55 50 45 40 35 30 25 20 15 10 5 0 duty cycle=30% duty cycle=50% DC 25 o Case Temperature, TC ( C) Figure 9. Power Derating Curve 50 75 100 T C(°C) 125 150 Figure 10. IF(Peak) vs TC, f=70 kHz LQA32T300C 1 D= 0.5 D = 0.3 0.1 D= 0.1 Zth(j-c)/Rth(j-c) D= 0.05 D= 0.02 D= 0.01 0.01 D= 0.005 D= 0.002 Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t1(sec) Figure 11. Normalized Maximum Transient Thermal Impedance 4 www.powerint.com Rev 1.1 01/11 LQA32T300C Dimensional Outline Drawings TO-220AB A E Q Millimeters A1 øP D D1 L1 b2 L b c e A2 e1 Dim MIN MAX A 4.32 4.70 A1 1.11 1.38 A2 2.59 2.79 b 0.77 1.00 b2 1.23 1.36 C 0.34 0.47 D 14.71 15.75 D1 9.05 9.25 E 9.96 10.36 e 2.44 2.64 e1 4.98 5.18 L 12.70 14.22 L1 – 3.90 ØP 3.71 3.96 Q 2.54 2.90 Mechanical Mounting Method Maximum Torque / Pressure specification Screw through hole in package tab Clamp against package body 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) 12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2 Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more details. Ordering Information Part Number Package Packing LQA32T300C TO-220AB 50 units/tube The information contained in this document is subject to change without notice. 5 Rev 1.1 01/11 www.powerint.com LQA32T300C Revision 1.0 1.1 Notes Released by Qspeed Converted to Power Integrations Document Date 06/10 01/11 6 www.powerint.com Rev 1.1 01/11 LQA32T300C For the latest updates, visit our website: www.powerint.com Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. PATENT INFORMATION The products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.powerint.com. Power Integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm. The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. ©Copyright 2011 Power Integrations, Inc. Power Integrations Worldwide Sales Support Locations WORLD HEADQUARTERS 5245 Hellyer Avenue San Jose, CA 95138, USA. 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