POWERINT LXA12T600C

LXA12T600C
Qspeed™ Family
600 V, 12 A X-Series Common-Cathode Diode
Product Summary
IF(AVG) per diode
VRRM
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
6
600
71
3.1
0.7
General Description
A
V
nC
A
This device has the lowest QRR of any 600V
Silicon diode.
Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Pin Assignment
• Power Factor Correction (PFC) Boost Diode
• Motor drive circuits
• DC-AC inverters
Features
• Low QRR, Low IRRM, Low tRR
• High dIF/dt capable (1000A/µs)
• Soft recovery
TO-220AB
A1
A2
K
RoHS Compliant
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
IF(AVG)
Average forward current
IFSM
IFSM
TJ
TSTG
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
Lead soldering temperature
Power dissipation
PD
Conditions
Per Diode, TJ = 150 °C, TC = 121°C
Per Device, TJ = 150 °C, TC = 121°C
60 Hz, ½ cycle
½ cycle of t = 28 µs Sinusoid, TC = 25 °C
Leads at 1.6mm from case, 10 sec
TC = 25 °C
Rating
Units
600
6
12
50
350
150
–55 to 150
300
62.5
V
A
A
A
A
°C
°C
°C
W
Rating
Units
62
2.0
1.0
°C/W
°C/W
°C/W
Thermal Resistance
Symbol
Resistance from:
Conditions
RθJA
Junction to ambient
RθJC
Junction to case
TO-220AB
Per Diode
Per Device
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January 2011
LXA12T600C
Electrical Specifications at TJ= 25 °C (unless otherwise specified)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
-
0.7
2.27
2.0
30
250
2.94
-
µA
mA
V
V
pF
-
23
32
30
71
2.0
3.1
47
2.5
-
ns
ns
nC
nC
A
A
-
0.8
0.7
-
DC Characteristics
IR
Reverse current per diode
VF
Forward voltage per diode
CJ
Junction capacitance per
diode
VR = 600 V, TJ = 25 °C
VR = 600 V, TJ = 125 °C
IF = 6 A, TJ = 25 °C
IF = 6 A, TJ = 150 °C
VR = 10 V, 1 MHz
Dynamic Characteristics
tRR
Reverse recovery time,
per diode
dIF/dt =200 A/µs
VR=400, IF=6 A
QRR
Reverse recovery charge,
per diode
dIF/dt =200 A/µs
VR=400, IF=6 A
IRRM
Maximum reverse
recovery current, per
diode
dIF/dt =200 A/µs
VR=400, IF=6 A
TJ=25 °C
TJ=125 °C
TJ=25 °C
TJ =125 °C
TJ =25 °C
TJ=125 °C
S
t
Softness per diode= b
dIF/dt =200 A/µs
VR=400, IF=6 A
TJ =25 °C
TJ=125 °C
ta
Note to component engineers: X-Series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
VR
D1
DUT
L1
tRR
IF
dIF/dt
ta
15V
Pulse generator
tb
+
Rg
Q1
0
0.1xIRRM
IRRM
Figure 1. Reverse Recovery Definitions
Figure 2. Reverse Recovery Test Circuit
2
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LXA12T600C
Electrical Specifications at TJ= 25 °C (unless otherwise specified)
120
Tj=125C
100
80
Tj=25C
Cj (pF)
IF (A)
24
22
20
18
16
14
12
10
8
6
4
2
0
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
VF (V)
Figure 3. Typical IF vs VF
140
160
180
dI/dt=200A/us
40
140
35
dI/dt=500A/us
30
tRR (ns)
120
QRR (nC)
120
Figure 4. Typical Cj vs VR
dI/dt=1000A/us
160
100
80
dI/dt=200A/us
60
dI/dt=500A/us
25
20
15
40
dI/dt=1000A/us
10
20
5
0
2
4
6
8
10
12
14
0
2
4
6
IF (A)
8
10
12
14
IF (A)
Figure 6. Typical tRR vs IF at TJ = 125 °
Figure 5. Typical QRR vs IF at TJ = 125 °C
20
70
18
60
16
14
50
12
40
P (W)
IF(AV) (A)
100
VR (V)
10
8
6
30
20
4
10
2
0
0
25
50
75
100
125
Case Temperature, T C (o C)
Figure 7. DC Current Derating Curve
150
25
50
75
100
125
150
Case Temperature, T C (oC)
Figure 8. Power Derating Curve
3
Rev 1.1 01/11
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IF(PEAK) (A)
LXA12T600C
50
45
40
35
30
25
20
15
10
5
0
Duty=10%
Duty=30%
Duty=50%
DC
25
50
75
100
TC(°C)
125
150
Figure 9. IF(Peak) vs TC, f=70 kHz
LXA12T600C
1
D= 0.5
D = 0.3
0.1
D= 0.1
Zth(j-c)/Rth(j-c)
D= 0.05
D= 0.02
D= 0.01
0.01
D= 0.005
D= 0.002
Single Pulse
0.001
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1(sec)
Figure 10. Normalized Maximum Transient Thermal Impedance
4
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Rev 1.1 01/11
LXA12T600C
Dimensional Outline Drawings
TO-220AB
A
E
Q
A1
Millimeters
øP
D
D1
Dim
MIN
MAX
A
4.32
4.70
A1
1.11
1.38
A2
2.59
2.79
b
0.77
1.00
b2
1.23
1.36
C
0.34
0.47
D
14.71
15.75
D1
9.05
9.25
E
9.96
10.36
2.64
L1
b2
L
b
c
e
e
2.44
e1
4.98
5.18
L
12.70
14.22
L1
–
3.90
ØP
3.71
3.96
Q
2.54
2.90
A2
e1
Mechanical Mounting
Method
Maximum Torque / Pressure specification
Screw through hole in package tab
Clamp against package body
1 Newton Meter (nm) or 8.8 inch-pounds (lb-in)
12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2
Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum
temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more
details.
Ordering Information
Part Number
Package
Packing
LXA12T600C
TO-220AB
50 units/tube
The information contained in this document is subject to change without notice.
5
Rev 1.1 01/11
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LXA12T600C
Revision
1.0
1.1
Notes
Released by Qspeed
Converted to Power Integrations Document
Date
06/10
01/11
6
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Rev 1.1 01/11
LXA12T600C
For the latest updates, visit our website: www.powerint.com
Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability.
Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER
INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING,
WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS.
PATENT INFORMATION
The products and applications illustrated herein (including transformer construction and circuits external to the products)
may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications
assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.powerint.com. Power
Integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm.
The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS,
Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc.
Other trademarks are property of their respective companies. ©Copyright 2011 Power Integrations, Inc.
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