POWERSEM PSDM33

ECO-PACTM 2
PSDM 33/05
Three Phase Rectifier Bridge
ID25
VDSS
RDS(on)
with IGBT and Fast Recovery Diode
for Braking System
= 35 A
= 500 V
= 0.12 Ω
Preliminary Data Sheet
VRSM VRRM
Type
(V)
(V)
600 500 PSDM 33/05
K
GEH
C M L
VX
2
MOSFET
Symbol
Test Conditions
VDSS
VDGR
VGS
ID
ID
IDM
PD
IS
ISM
TVJ = 25 °C to 150 °C
Maximum Ratings
500
V
1
TVJ = 25 °C to 150 °C, RGS = 10 Ω
500
V
NTC optional
continuous
±20
V
TS = 85 °C
24
A
TS = 25 °C
35
A
Symbol
Test Conditions
TS = 25 °C, pulse width limited by TVJ
95
A
170
W
VGS = 0 V, TS = 25 °C
24
A
VGS = 0 V, TS = 25 °C, pulse width limited by TVJ
95
A
TS = 85 °C
Characteristic Values
TVJ = 25 °C, unless otherwise specified
VDSS
VGS(th)
VGS(th)
IGSS
IDSS
RDS(on)
RGint
gfs
VDS
td(on)
td(off)
Ciss
Coss
Crss
Qg
RthJH
Symbol
TVJ
TJM
Tstg
Visol
Md
Weight
min.
500
V
VDS = 20 V, ID = 20 mA
min.
2
V
VDS = 20 V, ID = 20 mA
max.
5
V
VGS = ±20 V, VDS = 0 V
max.
±500
nA
VDS = 500 V, VGS = 0 V
max.
2
mA
TVJ = 25 °C
max.
0.12
Ω
TVJ = 25 °C
max.
1.5
Ω
VDS = 15 V, IDS = 12 A
typ.
30
S
IDS = 24 V, VGS = 0 V
max.
1.5
V
VDS = 250 V, IDS = 12 A, VGS = 10 V max.
100
ns
Applications
max.
220
ns
typ.
8.5
nF
•
typ.
0.9
nF
}
Zgen. = 1 Ω, L-load
}
Module
Features
VGS = 0 V, ID = 2mA
VDS = 25 V, f = 1 MHz, VGS = 0 V
typ.
0.3
nF
VDS = 250 V, ID = 12 A, VGS = 10 V typ.
350
nC
0.38
K/W
max.
Test Conditions
Maximum Ratings
-40...+150
°C
150
°C
-40...+150
°C
V∼
50/60 Hz
t = 1 min
3000
Iisol ≤ 1 mA
t=1s
3600
V∼
1.5-2.0
Nm
24
g
Mounting torque (M 4)
typ.
•
•
•
•
•
•
•
High level of integration - only one
power semiconductor module required
Isolation voltage 3000 V∼
Planar glass passivated chips
Ultrafast boost diode
Leads suitable for PC board
soldering
Thermistor (optional)
UL registered, E 148688
Drive Inverters with brake system
Advantages
•
•
•
•
•
Easy to mount with two screws
Space and weight savings
high temperature and power
cycling capability
Small and light weight
2 functions in one package
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
Data according to IEC 60747 refer to a single diode
unless otherwise stated
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
Boost Diode
Symbol
VRRM
I FAV
IFSM
Test Conditions
Maximum Ratings
600
V
33
A
T = 10 ms (50Hz)
300
A
TS = 85 °C, rectangular δ =0.5
TVJ = 45 °C,
T = 8.3 ms (60Hz)
320
A
TVJ = 150 °C, T = 10 ms (50Hz)
260
A
T = 8.3 ms (60Hz)
280
A
36
W
P
TS = 85 °C
Symbol
Test Conditions
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Characteristic Values
TVJ = 25 °C, unless otherwise specified
VF
IR
IF = 22 A,
TVJ = 25 °C
max.
1.65
V
TVJ = 150 °C
max.
1.4
V
TVJ = 25 °C
max.
1.5
mA
TVJ = 25 °C
max.
0.25
mA
TVJ = 125 °C
max.
7
mA
for power-loss calculations only
max.
1.14
V
TVJ = 125 °C
max.
10
mΩ
IF = 30 A, -diF/dt = 240 A/µs
max.
11
A
VR = 350 V, TVJ = 100 °C
typ.
10
A
max.
1.8
K/W
VR = 600 V,
VR = 480 V,
VT0
rT
IRM
}
RthJH
Rectifier Diodes
Symbol
VRRM
IdAV
IFSM
Symbol
Test Conditions
Maximum Ratings
800
TS = 85 °C, sinus 180 °
TVJ = 45 °C,
V
54
A
T = 10 ms (50Hz)
300
A
T = 8.3 ms (60Hz)
320
A
TVJ = 150 °C, T = 10 ms (50Hz)
260
A
T = 8.3 ms (60Hz)
280
A
Test Conditions
Characteristic Values
TVJ = 25 °C, unless otherwise specified
VF
IF = 20 A,
IR
VR = 800 V,
VR = 640 V,
VT0
rT
RthJH
Module
TVJ = 25 °C
max.
TVJ = 125 °C
max.
1.4
V
TVJ = 25 °C
max.
0.25
mA
TVJ = 125 °C
max.
2
mA
for power-loss calculations only
max.
1.05
V
TVJ = 125 °C
max.
16
mΩ
max.
2.0
K/W
Symbol
Test Conditions
ds
dA
a
R25*
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
NTC @ 25 °C
1.4
V
Characteristic Values
11.2
5.6
50
470.000
mm
mm
m/s²
Ω
*NTC will be changed in future
to 5.000 Ω.
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20