RAMTRON FM25040B-G

Preliminary
FM25040B
4Kb Serial 5V F-RAM Memory
Features
4K bit Ferroelectric Nonvolatile RAM
• Organized as 512 x 8 bits
• High Endurance 1 Trillion (1012) Read/Writes
• 38 year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
Sophisticated Write Protection Scheme
• Hardware Protection
• Software Protection
Low Power Consumption
• 250 µA Active Current (1 MHz)
• 4 µA (typ.) Standby Current
Very Fast Serial Peripheral Interface - SPI
• Up to 20 MHz maximum Bus Frequency
• Direct hardware replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 8-pin “Green”/RoHS SOIC (-G)
Description
Pin Configuration
The FM25040B is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 38 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
The FM25040B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM25040B is capable of
supporting up to 1012 read/write cycles, or a million
times more write cycles than EEPROM.
These capabilities make the FM25040B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25040B provides substantial benefits to users
of serial EEPROM, in a hardware drop-in
replacement. The FM25040B uses the high-speed
SPI bus, which enhances the high-speed write
capability of F-RAM technology. The specifications
are guaranteed over an industrial temperature range
of -40°C to +85°C.
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.2
Feb. 2011
CS
SO
WP
1
8
2
7
3
6
VSS
4
5
Pin Names
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
VDD
HOLD
SCK
SI
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage 5V
Ground
Ordering Information
FM25040B-G
“Green” 8-pin SOIC
FM25040B-GTR
“Green” 8-pin SOIC,
Tape & Reel
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-F-RAM, (719) 481-7000
www.ramtron.com
Page 1 of 13
FM25040B - 4Kb 5V SPI F-RAM
WP
Instruction Decode
Clock Generator
Control Logic
Write Protect
CS
HOLD
SCK
64 x 64
FRAM Array
Instruction Register
Address Register
Counter
9
SI
8
Data I/O Register
SO
2
Nonvolatile Status
Register
Figure 1. Block Diagram
Pin Descriptions
Pin Name
/CS
I/O
Input
SCK
Input
/HOLD
Input
/WP
Input
SI
Input
SO
Output
VDD
VSS
Supply
Supply
Rev. 1.2
Feb. 2011
Description
Chip Select. This active-low input activates the device. When high, the device enters lowpower standby mode, ignores other inputs, and all outputs are tri-stated. When low, the
device internally activates the SCK signal. A falling edge on /CS must occur prior to every
op-code.
Serial Clock: All I/O activity is synchronized to the serial clock. Inputs are latched on the
rising edge and outputs occur on the falling edge. Since the device is static, the clock
frequency may be any value between 0 and 20 MHz and may be interrupted at any time.
Hold: The /HOLD pin is used when the host CPU must interrupt a memory operation for
another task. When /HOLD is low, the current operation is suspended. The device ignores
any transition on SCK or /CS. All transitions on /HOLD must occur while SCK is low.
Write Protect: This active-low pin prevents all write operations, including those to the
status register. If high, write access is determined by the other write protection features, as
controlled through the status register. A complete explanation of write protection is
provided on page 6.
Serial Input: All input data is driven to this pin. The pin is sampled on the rising edge of
SCK and is ignored at other times. It should always be driven to a valid logic level to meet
IDD specifications.
* SI may be connected to SO for a single pin data interface.
Serial Output: SO is the data output pin. It is driven actively during a read and remains tristate at all other times including when /HOLD is low. Data transitions are driven on the
falling edge of the serial clock.
* SO can be connected to SI for a single pin data interface since the part communicates in
half-duplex fashion.
Supply Voltage: 5V
Ground
Page 2 of 13
FM25040B - 4Kb 5V SPI F-RAM
Overview
The FM25040B is a serial F-RAM memory. The
memory array is logically organized as 512 x 8 and is
accessed using an industry standard Serial Peripheral
Interface or SPI bus. Functional operation of the FRAM is similar to serial EEPROMs. The major
difference between the FM25040B and a serial
EEPROM with the same pin-out relates to its
superior write performance. This makes the
FM25040B a drop-in replacement for most 4Kb SPI
EEPROMs that support Modes 0 & 3.
Memory Architecture
When accessing the FM25040B, the user addresses
512 locations each with 8 data bits. These data bits
are shifted serially. The addresses are accessed using
the SPI protocol, which includes a chip select (to
permit multiple devices on the bus), an op-code
including the upper address bit, and a word address.
The word address consists of the lower 8-address
bits. The complete address of 9-bits specifies each
byte address uniquely.
Most functions of the FM25040B either are
controlled by the SPI interface or are handled
automatically by on-board circuitry. The access time
for memory operation essentially is zero, beyond the
time needed for the serial protocol. That is, the
memory is read or written at the speed of the SPI bus.
Unlike an EEPROM, it is not necessary to poll the
device for a ready condition since writes occur at bus
speed. That is, by the time a new bus transaction can
be shifted into the part, a write operation will be
complete. This is explained in more detail in the
interface section that follows.
Users expect several obvious system benefits from
the FM25040B due to its fast write cycle and high
endurance as compared with EEPROM. However
there are less obvious benefits as well. For example
in a high noise environment, the fast-write operation
is less susceptible to corruption than an EEPROM
since it is completed quickly. By contrast, an
EEPROM requiring milliseconds to write is
vulnerable to noise during much of the cycle.
Note that the FM25040B contains no power
management circuits other than a simple internal
power-on reset. It is the user’s responsibility to
ensure that VDD is within datasheet tolerances to
prevent incorrect operation. It is recommended
that the part is not powered down with chip
enable active.
MHz. This high-speed serial bus provides high
performance serial communication to a host
microcontroller. Many common microcontrollers
have hardware SPI ports allowing a direct interface.
It is quite simple to emulate the port using ordinary
port pins for microcontrollers that do not. The
FM25040B operates in SPI Mode 0 and 3.
The SPI interface uses a total of four pins: clock,
data-in, data-out, and chip select. A typical system
configuration uses one or more FM25040B devices
with a microcontroller that has a dedicated SPI port,
as Figure 2 illustrates. Note that the clock, data-in,
and data-out pins are common among all devices.
The Chip Select and Hold pins must be driven
separately for each FM25040B device.
For a microcontroller that has no dedicated SPI bus, a
general purpose port may be used. To reduce
hardware resources on the controller, it is possible to
connect the two data pins (SI, SO) together and tie
off (high) the /HOLD pin. Figure 3 shows a
configuration that uses only three pins.
Protocol Overview
The SPI interface is a synchronous serial interface
using clock and data lines. It is intended to support
multiple devices on the bus. Each device is activated
using a chip select. Once chip select is activated by
the bus master, the FM25040B will begin monitoring
the clock and data lines. The relationship between the
falling edge of /CS, the clock and data is dictated by
the SPI mode. The device will make a determination
of the SPI mode on the falling edge of each chip
select. While there are four such modes, the
FM25040B supports Modes 0 and 3. Figure 4 shows
the required signal relationships for Modes 0 and 3.
For both modes, data is clocked into the FM25040B
on the rising edge of SCK and data is expected on the
first rising edge after /CS goes active. If the clock
begins from a high state, it will fall prior to beginning
data transfer in order to create the first rising edge.
The SPI protocol is controlled by op-codes. These
op-codes specify the commands to the part. After /CS
is activated the first byte transferred from the bus
master is the op-code. Following the op-code, any
addresses and data are then transferred. Note that the
WREN and WRDI op-codes are commands with no
subsequent data transfer.
Important: The /CS must go inactive (high) after
an operation is complete and before a new op-code
can be issued. There is one valid op-code only per
active chip select.
Serial Peripheral Interface – SPI Bus
The FM25040B employs a Serial Peripheral Interface
(SPI) bus. It is specified to operate at speeds up to 20
Rev. 1.2
Feb. 2011
Page 3 of 13
FM25040B - 4Kb 5V SPI F-RAM
Figure 2. System Configuration with SPI port
Figure 3. System Configuration without SPI port
SPI Mode 0: CPOL=0, CPHA=0
7
6
5
4
3
2
1
0
SPI Mode 3: CPOL=1, CPHA=1
7
6
5
4
3
2
1
0
Figure 4. SPI Modes 0 & 3
Rev. 1.2
Feb. 2011
Page 4 of 13
FM25040B - 4Kb 5V SPI F-RAM
Data Transfer
All data transfers to and from the FM25040B occur
in 8-bit groups. They are synchronized to the clock
signal (SCK) and they transfer most significant bit
(MSB) first. The serial input data is clocked in on
the rising edge of SCK. The serial data output is
driven from the falling edge of SCK.
Command Structure
There are six commands called op-codes that can be
issued by the bus master to the FM25040B. They are
listed in the table below. These op-codes control the
functions performed by the memory. They can be
divided into three categories. First, there are
commands that have no subsequent data transfer.
They perform a single function, such as, enabling a
write operation. Second are commands followed by
one byte, either in or out. They operate on the status
register. Third are commands for memory
transactions followed by address and one or more
bytes of data.
Table 1. Op-code Commands
Name
Description
Set Write Enable Latch
WREN
Write Disable
WRDI
Read Status Register
RDSR
Write Status Register
WRSR
Read Memory Data
READ
WRITE Write Memory Data
Op-code
0000_0110b
0000_0100b
0000_0101b
0000_0001b
0000_A011b
0000_A010b
WREN - Set Write Enable Latch
The FM25040B will power up with writes disabled.
The WREN command must be issued prior to any
write operation. Sending the WREN op-code will
allow the user to issue subsequent op-codes for
write operations. These include writing the status
register and writing the memory.
Sending the WREN op-code causes the internal
Write Enable Latch to be set. A flag bit in the status
register, called WEL, indicates the state of the latch.
WEL=1 indicates that writes are permitted. A write
to the status register has no effect on the WEL bit.
Completing any write operation will automatically
clear the write-enable latch and prevent further
writes without another WREN command. Figure 5
below illustrates the WREN command bus
configuration.
WRDI - Write Disable
The WRDI command disables all write activity by
clearing the Write Enable Latch. The user can verify
that writes are disabled by reading the WEL bit in
the status register and verifying that WEL=0. Figure
6 illustrates the WRDI command bus configuration.
Figure 5. WREN Bus Configuration
Figure 6. WRDI Bus Configuration
Rev. 1.2
Feb. 2011
Page 5 of 13
FM25040B - 4Kb 5V SPI F-RAM
RDSR - Read Status Register
The RDSR command allows the bus master to verify
the contents of the Status Register. Reading Status
provides information about the current state of the
write protection features. Following the RDSR opcode, the FM25040B will return one byte with the
contents of the Status Register. The Status Register is
described in detail in the Status Register & Write
Protection section.
WRSR – Write Status Register
The WRSR command allows the user to select
certain write protection features by writing a byte to
the Status Register. Prior to issuing a WRSR
command, the /WP pin must be high or inactive. Note
that on the FM25040B, /WP prevents writing to the
Status Register and the memory array. Prior to
sending the WRSR command, the user must send a
WREN command to enable writes. Note that
executing a WRSR command is a write operation and
therefore clears the Write Enable Latch. The bus
timing for RDSR and WRSR are shown below.
Figure 7. RDSR Bus Timing
Figure 8. WRSR Bus Timing
Status Register & Write Protection
The write protection features of the FM25040B are
multi-tiered. First, a WREN op-code must be issued
prior to any write operation. Assuming that writes
are enabled using WREN, writes to memory are
controlled by the /WP pin and the Status Register.
When /WP is low, the entire part is write-protected.
When /WP is high, the memory protection is subject
to the Status register. Writes to the Status Register
are performed using the WREN and WRSR
commands and subject to the /WP pin. The Status
Register is organized as follows.
Table 2. Status Register
Bit
Name
7
0
6
0
5
0
4
0
3
BP1
2
BP0
1
WEL
0
0
Bits 0 and 4-7 are fixed at 0 and cannot be modified.
Note that bit 0 (/RDY in EEPROMs) is wired low
since F-RAM writes have no delay and the memory
is never busy. All EEPROMs use Ready to indicate
Rev. 1.2
Feb. 2011
whether a write cycle is complete or not. The BP1 and
BP0 bits control write protection features. They are
nonvolatile (shaded yellow). The WEL flag indicates
the state of the Write Enable Latch. This bit is
internally set by the WREN command and is cleared
by terminating a write cycle (/CS high) or by using
the WRDI command.
BP1 and BP0 are memory block write protection bits.
They specify portions of memory that are writeprotected as shown in the following table.
Table 3. Block Memory Write Protection
BP1
BP0
Protected Address Range
0
0
1
1
0
1
0
1
None
180h to 1FFh (upper ¼)
100h to 1FFH (upper ½)
000h to 1FFh (all)
Page 6 of 13
FM25040B - 4Kb 5V SPI F-RAM
The BP1 and BP0 bits and the Write Enable Latch
are the only mechanisms that protect the memory
from writes. The remaining write protection features
protect inadvertent changes to the block protect bits.
Table 4. Write Protection
WEL
/WP
Protected Blocks
0
X
Protected
1
0
Protected
1
1
Protected
The BP1 and BP0 bits allow software to selectively
write protect the array. These settings are only used
when the /WP pin is inactive and the WREN
command has been issued. The following table
summarizes the write protection conditions.
Unprotected Blocks
Protected
Protected
Unprotected
Status Register
Protected
Protected
Unprotected
Memory Operation
The SPI interface, with its relatively high maximum
clock frequency, highlights the fast write capability
of the F-RAM technology. Unlike SPI-bus
EEPROMs, the FM25040B can perform sequential
writes at bus speed. No page register is needed and
any number of sequential writes may be performed.
Write Operation
All writes to the memory array begin with a WREN
op-code. The bus master then issues a WRITE opcode. Part of this op-code includes the upper bit of
the memory address. Bit 3 in the op-code corresponds
to A8. The next byte is the lower 8-bits of the address
A7-A0. In total, the 9-bits specify the address of the
first byte of the write operation. Subsequent bytes are
data and they are written sequentially. Addresses are
incremented internally as long as the bus master
continues to issue clocks. If the last address of 1FFh
is reached, the counter will roll over to 000h. Data is
written MSB first.
Unlike EEPROMs, any number of bytes can be
written sequentially and each byte is written to
memory immediately after it is clocked in (after the
8th clock). The rising edge of /CS terminates a
WRITE op-code operation.
Rev. 1.2
Feb. 2011
Read Operation
After the falling edge of /CS, the bus master can issue
a READ op-code. Part of this op-code includes the
upper bit of the memory address. The next byte is the
lower 8-bits of the address. In total, the 9-bits specify
the address of the first byte of the read operation.
After the op-code is complete, the SI pin is ignored.
The bus master then issues 8 clocks, with one bit read
out for each. Addresses are incremented internally as
long as the bus master continues to issue clocks. If
the last address of 1FFh is reached, the counter will
roll over to 000h. Data is read MSB first. The rising
edge of /CS terminates a READ op-code operation..
The bus configuration for read and write operations is
shown below.
Hold
The /HOLD pin can be used to interrupt a serial
operation without aborting it. If the bus master takes
the /HOLD pin low while SCK is low, the current
operation will pause. Taking the /HOLD pin high
while SCK is low will resume an operation. The
transitions of /HOLD must occur while SCK is low,
but the SCK pin can toggle during a hold state.
Page 7 of 13
FM25040B - 4Kb 5V SPI F-RAM
CS
0
1
2
0
0
0
3
4
5
6
7
0
1
0
1
0
7
6
2
3
4
5
6
7
0
1
2
3
4
5
6
Byte Address
5 4 3 2
1
0
7
6
5
Data
4 3
2
1
7
7
0
0
SCK
op-code
SI
0
A
MSB
SO
LSB MSB
LSB
Hi-Z
Figure 9. Memory Write
CS
0
1
2
0
0
0
3
4
5
6
7
0
1
0
1
1
7
6
5
6
Byte Address
5 4 3 2
1
2
3
4
7
0
1
2
3
4
5
6
7
7
7 6
MSB
5
Data Out
4 3 2
1
0
LSB
0
LSB
SCK
op-code
SI
0
A
MSB
SO
Hi-Z
0
LSB
Figure 10. Memory Read
Endurance
Internally, a F-RAM operates with a read and restore
mechanism. Therefore, endurance cycles are applied
for each access: read or write. The F-RAM
architecture is based on an array of rows and
columns. Each access causes a cycle for an entire
row. In the FM25040B, a row is 64 bits wide. Every
8-byte boundary marks the beginning of a new row.
Rev. 1.2
Feb. 2011
Endurance can be optimized by ensuring frequently
accessed data is located in different rows.
Regardless, F-RAM read and write endurance is
effectively unlimited at the 20MHz clock speed.
Even at 2000 accesses per second to the same row, 15
years time will elapse before 1012 endurance cycles
occur.
Page 8 of 13
FM25040B - 4Kb 5V SPI F-RAM
Electrical Specifications
Absolute Maximum Ratings
Symbol
Description
VDD
Power Supply Voltage with respect to VSS
VIN
Voltage on any pin with respect to VSS
TSTG
TLEAD
VESD
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Electrostatic Discharge Voltage
- Human Body Model (AEC-Q100-002 Rev. E)
- Charged Device Model (AEC-Q100-011 Rev. B)
- Machine Model (AEC-Q100-003 Rev. E)
Package Moisture Sensitivity Level
Ratings
-1.0V to +7.0V
-1.0V to +7.0V
and VIN < VDD+1.0V
-55°C to + 125°C
260° C
3.5kV
1.25kV
250V
MSL-1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these or any other conditions above those listed in the operational section of
this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device
reliability.
DC Operating Conditions (TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Units
VDD
Main Power Supply
4.5
5.0
5.5
V
IDD
VDD Supply Current
mA
0.25
@ SCK = 1.0 MHz
mA
4.0
@ SCK = 20.0 MHz
ISB
Standby Current
4
10
µA
ILI
Input Leakage Current
±1
µA
ILO
Output Leakage Current
±1
µA
VIH
Input High Voltage
0.7 VDD
VDD + 0.3
V
VIL
Input Low Voltage
-0.3
0.3 VDD
V
VOH
Output High Voltage
V
VDD – 0.8
@ IOH = -1 mA
VOL
Output Low Voltage
0.4
V
@ IOL = 2 mA
VHYS
Input Hysteresis
0.05 VDD
V
Notes
1
2
3
3
4
Notes
1.
2.
3.
4.
SCK toggling between VDD-0.3V and VSS, other inputs VSS or VDD-0.3V.
SCK = SI = /CS=VDD. All inputs VSS or VDD.
VIN or VOUT = VSS to VDD.
This parameter is periodically sampled and not 100% tested.
Rev. 1.2
Feb. 2011
Page 9 of 13
FM25040B - 4Kb 5V SPI F-RAM
AC Parameters
Symbol
fCK
tCH
tCL
tCSU
tCSH
tOD
tODV
tOH
tD
tR
tF
tSU
tH
tHS
tHH
tHZ
tLZ
(TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified)
Parameter
Min
Max
SCK Clock Frequency
0
20
Clock High Time
22
Clock Low Time
22
Chip Select Setup
10
Chip Select Hold
10
Output Disable
20
Output Data Valid
20
Output Hold
0
Deselect Time
60
Data In Rise Time
50
Data In Fall Time
50
Data Setup Time
5
Data Hold Time
5
/Hold Setup Time
10
/Hold Hold Time
10
/Hold Low to Hi-Z
20
/Hold High to Data Active
20
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
2
1,3
1,3
2
2
Notes
1.
2.
3.
tCH + tCL = 1/fCK.
Rise and fall times measured between 10% and 90% of waveform.
This parameter is characterized and not 100% tested.
Capacitance (TA = 25°C , f=1.0 MHz, VDD = 5V)
Symbol
Parameter
CO
Output Capacitance (SO)
CI
Input Capacitance
Max
8
6
Units
pF
pF
Notes
1
1
Notes
1. This parameter is periodically sampled and not 100% tested.
AC Test Conditions
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load Capacitance
Data Retention
Symbol
Parameter
TDR
@ +85ºC
@ +80ºC
@ +75ºC
Rev. 1.2
Feb. 2011
10% and 90% of VDD
5 ns
0.5 VDD
30 pF
Min
10
19
38
Max
-
Units
Years
Years
Years
Notes
Page 10 of 13
FM25040B - 4Kb 5V SPI F-RAM
Serial Data Bus Timing
tD
CS
tCSU
SCK
tSU
tF
1/tCK
tCL
tR
tCSH
tCH
tH
SI
tOH
tODV
tOD
SO
/Hold Timing
tHS
CS
tHH
SCK
tHH
tHS
HOLD
SO
tHZ
tLZ
Power Cycle Timing
Power Cycle Timing (TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified)
Symbol
Parameter
Min
Max
Units
tPU
VDD(min) to First Access Start
10
ms
tPD
Last Access Complete to VDD(min)
0
µs
tVR
VDD Rise Time
30
µs/V
tVF
VDD Fall Time
100
µs/V
Notes
1. Slope measured at any point on VDD waveform.
Rev. 1.2
Feb. 2011
Notes
1
1
Page 11 of 13
FM25040B - 4Kb 5V SPI F-RAM
Mechanical Drawing
(8-pin SOIC - JEDEC Standard MS-012, Variation AA)
Refer to JEDEC MS-012 for complete dimensions and notes.
All dimensions in millimeters.
SOIC Package Marking Scheme
XXXXXXX-P
RLLLLLLL
RICYYWW
Legend:
XXXXXX= part number, P= package type (G=SOIC)
R=rev code, LLLLLLL= lot code
RIC=Ramtron Int’l Corp, YY=year, WW=work week
Example: FM25040B, “Green” SOIC package, Year 2010, Work Week 51
FM25040B-G
A00002G1
RIC1051
Rev. 1.2
Feb. 2011
Page 12 of 13
FM25040B - 4Kb 5V SPI F-RAM
Revision History
Revision
1.0
1.1
1.2
Rev. 1.2
Feb. 2011
Date
11/10/2010
1/31/2011
2/15/2011
Summary
Initial Release
Added ESD ratings.
Changed tPU and tVF spec limits.
Page 13 of 13